ON Semiconductor MMBT2222AWT3G
- Part Number:
- MMBT2222AWT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069167-MMBT2222AWT3G
- Description:
- TRANS NPN 40V 0.6A SC70-3
- Datasheet:
- MMBT2222AWT3G
ON Semiconductor MMBT2222AWT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222AWT3G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMMBT2222A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)285ns
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222AWT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT2222AWT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222AWT3G Applications
There are a lot of ON Semiconductor
MMBT2222AWT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT2222AWT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222AWT3G Applications
There are a lot of ON Semiconductor
MMBT2222AWT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222AWT3G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SC-70 T/R
MMBT2222A Series 40 V 600 mA General Purpose Transistor - SOT-323 (SC-70)
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SC-70 T/R
MMBT2222A Series 40 V 600 mA General Purpose Transistor - SOT-323 (SC-70)
The three parts on the right have similar specifications to MMBT2222AWT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)RoHS StatusLead FreeContact PlatingMountSupplier Device PackageWeightSeriesMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCPolarityPower - MaxCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyMax Breakdown VoltageFrequency - TransitionContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningTerminationSubcategoryCurrent RatingMax Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBT2222AWT3GACTIVE (Last Updated: 3 days ago)4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)150mWDUALGULL WING260300MHzNOT SPECIFIEDMMBT2222A31Single150mWAMPLIFIER300MHzNPNNPN40V600mA100 @ 150mA 10V1V @ 50mA, 500mA40V300MHz1V75V6V100285nsROHS3 CompliantLead Free----------------------------
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-15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---300mW---300MHz-MMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300mV60V6V100-ROHS3 CompliantLead FreeTinSurface MountSOT-23-37.994566mgAutomotive, AEC-Q101150°C-55°C40VNPN300mW50nA ICBO40V200mA300MHz40V300MHz200mA1mm3.05mm1.4mmNo SVHCNo-----
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-15 WeeksSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed150mWDUALGULL WING260200MHz30MMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V1.6V @ 50mA, 500mA-60V200MHz-1.6V-60V-5V100-ROHS3 CompliantLead Free-Surface Mount-2.012816mgAutomotive, AEC-Q101---60V--10nA ICBO-600mA-60V--600mA900μm1.6mm800μmNo SVHCNoSMD/SMTOther Transistors-600mA150°C45ns
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-16 WeeksSurface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)---250mW---300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V-1V75V6V75-ROHS3 CompliantLead Free-Surface MountSOT-523F30mg-150°C-55°C-NPN250mW-40V600mA100MHz40V300MHz-780μm1.7mm980μm-------
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