ON Semiconductor MMBT2222AWT1G
- Part Number:
- MMBT2222AWT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845162-MMBT2222AWT1G
- Description:
- TRANS NPN 40V 0.6A SOT323
- Datasheet:
- MMBT2222AWT1G
ON Semiconductor MMBT2222AWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222AWT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating28A
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT2222A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Turn Off Time-Max (toff)285ns
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222AWT1G Description
MMBT2222AWT1G transistors are intended for use in general-purpose amplifiers. The SOT323/SC70 package houses the MMBT2222AWT1G, which is designed for low-power surface mount applications.
MMBT2222AWT1G Features AEC?Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS
Compliant*
MMBT2222AWT1G Applications Switching loads up to 600mA
Motor speed control
Driver Modules like Relay Driver, LED driver, etc.
Inverter and Rectifier circuits
Darlington Pair Designs
MMBT2222AWT1G Features AEC?Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS
Compliant*
MMBT2222AWT1G Applications Switching loads up to 600mA
Motor speed control
Driver Modules like Relay Driver, LED driver, etc.
Inverter and Rectifier circuits
Darlington Pair Designs
MMBT2222AWT1G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
ON Semi MMBT2222AWT1G NPN Bipolar Transistor, 0.6 A, 40 V, 3-Pin SC-70 | ON Semiconductor MMBT2222AWT1G
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SC-70 T/R
MMBT Series 40 V 600 mA 150 mW SMT General Purpose Transistor - SC-70-3
The MMBT222AW transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications.
Bipolar Transistor, Npn, 40V; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz Rohs Compliant: Yes |Onsemi MMBT2222AWT1G.
ON Semi MMBT2222AWT1G NPN Bipolar Transistor, 0.6 A, 40 V, 3-Pin SC-70 | ON Semiconductor MMBT2222AWT1G
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SC-70 T/R
MMBT Series 40 V 600 mA 150 mW SMT General Purpose Transistor - SC-70-3
The MMBT222AW transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications.
Bipolar Transistor, Npn, 40V; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz Rohs Compliant: Yes |Onsemi MMBT2222AWT1G.
The three parts on the right have similar specifications to MMBT2222AWT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesTerminal FinishCurrent - Collector Cutoff (Max)Continuous Collector CurrentTerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT2222AWT1GACTIVE (Last Updated: 3 days ago)7 WeeksTinSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING26028A300MHz40MMBT2222A31Single150mWAMPLIFIER300MHzNPNNPN40V600mA100 @ 150mA 10V1V @ 50mA, 500mA40V300MHz1V40V75V6V35285ns1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q101Matte Tin (Sn)50nA ICBO-200mA------------
-
-15 Weeks-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW-200MHzPNPPNP-60V-600mA100 @ 150mA 10V1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100-900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101Matte Tin (Sn) - annealed10nA ICBO-600mASMD/SMT600mA150°C45ns--------
-
-16 Weeks-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V-1V40V75V6V75-780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount30mg-----600mA--SOT-523F150°C-55°CNPN250mW40V100MHz300MHz
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