MMBT2222ATT1G

ON Semiconductor MMBT2222ATT1G

Part Number:
MMBT2222ATT1G
Manufacturer:
ON Semiconductor
Ventron No:
2463101-MMBT2222ATT1G
Description:
TRANS NPN 40V 0.6A SC75-3
ECAD Model:
Datasheet:
MMBT2222ATT1G

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Specifications
ON Semiconductor MMBT2222ATT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222ATT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-75, SOT-416
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    75V
  • Max Power Dissipation
    150mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    600mA
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT2222A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    35
  • Turn Off Time-Max (toff)
    285ns
  • Height
    800μm
  • Length
    1.65mm
  • Width
    900μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT2222ATT1G Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz


MMBT2222ATT1G Applications
There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT2222ATT1G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,10V 600mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
Transistor GP BJT NPN 40V 0.6A 3-Pin SOT-416 T/R - Product that comes on tape, but is not reeled (Al
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SC-75
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-416 T/R
ON Semi MMBT2222ATT1G NPN Bipolar Transistor, 0.6 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT2222ATT1G
NPN Bipolar Junction Transistor
Transistor, BIPOL, NPN, 40V, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANS, BIPOL, NPN, 40V, SC-75; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Product Comparison
The three parts on the right have similar specifications to MMBT2222ATT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn Off Time-Max (toff)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Weight
    Series
    Reach Compliance Code
    Qualification Status
    Current - Collector Cutoff (Max)
    Continuous Collector Current
    Terminal Finish
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Frequency
    Frequency - Transition
    View Compare
  • MMBT2222ATT1G
    MMBT2222ATT1G
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    SC-75, SOT-416
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    75V
    150mW
    DUAL
    GULL WING
    260
    600mA
    300MHz
    40
    MMBT2222A
    3
    1
    Single
    150mW
    AMPLIFIER
    300MHz
    NPN
    NPN
    40V
    600mA
    100 @ 150mA 10V
    1V @ 50mA, 500mA
    40V
    300MHz
    1V
    40V
    75V
    6V
    35
    285ns
    800μm
    1.65mm
    900μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4124-7
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    25V
    300mW
    DUAL
    GULL WING
    235
    200mA
    300MHz
    10
    MMBT4124
    3
    1
    Single
    300mW
    SWITCHING
    300MHz
    NPN
    NPN
    25V
    200mA
    120 @ 2mA 1V
    300mV @ 5mA, 50mA
    25V
    300MHz
    -
    25V
    30V
    5V
    120
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    not_compliant
    Not Qualified
    50nA ICBO
    200mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    -
    15 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT4126
    3
    1
    Single
    300mW
    SWITCHING
    250MHz
    PNP
    PNP
    25V
    200mA
    120 @ 2mA 1V
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    -
    -
    50nA ICBO
    -200mA
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904-7-F
    -
    15 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    40V
    300mW
    -
    -
    -
    -
    300MHz
    -
    MMBT3904
    -
    1
    Single
    350mW
    -
    300MHz
    -
    NPN
    40V
    200mA
    100 @ 10mA 1V
    300mV @ 5mA, 50mA
    40V
    -
    300mV
    40V
    60V
    6V
    100
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    -
    -
    50nA ICBO
    200mA
    -
    SOT-23-3
    150°C
    -55°C
    NPN
    300mW
    40V
    200mA
    300MHz
    300MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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