ON Semiconductor MMBT2222ATT1G
- Part Number:
- MMBT2222ATT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463101-MMBT2222ATT1G
- Description:
- TRANS NPN 40V 0.6A SC75-3
- Datasheet:
- MMBT2222ATT1G
ON Semiconductor MMBT2222ATT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222ATT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC75V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT2222A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Turn Off Time-Max (toff)285ns
- Height800μm
- Length1.65mm
- Width900μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222ATT1G Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222ATT1G Applications
There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222ATT1G Applications
There are a lot of ON Semiconductor
MMBT2222ATT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222ATT1G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,10V 600mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
Transistor GP BJT NPN 40V 0.6A 3-Pin SOT-416 T/R - Product that comes on tape, but is not reeled (Al
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SC-75
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-416 T/R
ON Semi MMBT2222ATT1G NPN Bipolar Transistor, 0.6 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT2222ATT1G
NPN Bipolar Junction Transistor
Transistor, BIPOL, NPN, 40V, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANS, BIPOL, NPN, 40V, SC-75; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
40V 150mW 100@150mA,10V 600mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
Transistor GP BJT NPN 40V 0.6A 3-Pin SOT-416 T/R - Product that comes on tape, but is not reeled (Al
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SC-75
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-416 T/R
ON Semi MMBT2222ATT1G NPN Bipolar Transistor, 0.6 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT2222ATT1G
NPN Bipolar Junction Transistor
Transistor, BIPOL, NPN, 40V, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANS, BIPOL, NPN, 40V, SC-75; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to MMBT2222ATT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesReach Compliance CodeQualification StatusCurrent - Collector Cutoff (Max)Continuous Collector CurrentTerminal FinishSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT2222ATT1GACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface MountSC-75, SOT-416YES3SILICON-55°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)3EAR99Other Transistors75V150mWDUALGULL WING260600mA300MHz40MMBT2222A31Single150mWAMPLIFIER300MHzNPNNPN40V600mA100 @ 150mA 10V1V @ 50mA, 500mA40V300MHz1V40V75V6V35285ns800μm1.65mm900μmNo SVHCNoROHS3 CompliantLead Free------------------
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---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V300mV @ 5mA, 50mA25V300MHz-25V30V5V120-1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSurface Mount7.994566mgAutomotive, AEC-Q101not_compliantNot Qualified50nA ICBO200mA----------
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-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q101--50nA ICBO-200mAMatte Tin (Sn)---------
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-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-3--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW----300MHz-MMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300mV40V60V6V100-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q101--50nA ICBO200mA-SOT-23-3150°C-55°CNPN300mW40V200mA300MHz300MHz
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