ON Semiconductor MMBT2222ALT3G
- Part Number:
- MMBT2222ALT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845059-MMBT2222ALT3G
- Description:
- TRANS NPN 40V 0.6A SOT-23
- Datasheet:
- MMBT2222ALT3G
ON Semiconductor MMBT2222ALT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222ALT3G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3 (TO-236)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC40V
- Max Power Dissipation225mW
- Current Rating600mA
- Frequency300MHz
- Base Part NumberMMBT2222A
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max300mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Max Frequency100MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222ALT3G Description
MMBT2222ALT3G transistor is a bipolar transistor that is controlled through current. In comparison to Field effect transistors, MMBT2222ALT3G bipolar transistors have a slower switching speed and the input impedance is low and power consumption is large. On Semiconductor MMBT2222ALT3G is widely employed in television, broadcasting communications, radar, computers, automatic control devices electronic instruments, household appliances, and many other areas.
MMBT2222ALT3G Features
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMBT2222ALT3G Applications
Television
Broadcasting communications
Radar
Computers
Household appliances
MMBT2222ALT3G transistor is a bipolar transistor that is controlled through current. In comparison to Field effect transistors, MMBT2222ALT3G bipolar transistors have a slower switching speed and the input impedance is low and power consumption is large. On Semiconductor MMBT2222ALT3G is widely employed in television, broadcasting communications, radar, computers, automatic control devices electronic instruments, household appliances, and many other areas.
MMBT2222ALT3G Features
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMBT2222ALT3G Applications
Television
Broadcasting communications
Radar
Computers
Household appliances
MMBT2222ALT3G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-23 T/R
40V 225mW 600mA 35@10mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
Transistor, NPN, 40V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
Bipolar Transistor, Npn, 40V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT2222ALT3G.
TRANSISTOR, NPN, 40V, 0.225W, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MMBTxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-23 T/R
40V 225mW 600mA 35@10mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
Transistor, NPN, 40V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power
Bipolar Transistor, Npn, 40V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT2222ALT3G.
TRANSISTOR, NPN, 40V, 0.225W, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MMBTxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT2222ALT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesPublishedContinuous Collector CurrentView Compare
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MMBT2222ALT3GACTIVE (Last Updated: 1 day ago)10 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3 (TO-236)-55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)150°C-55°C40V225mW600mA300MHzMMBT2222A1NPNSingle300mW300mW300MHzNPN40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V40V600mA100MHz1V40V300MHz75V6V351.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------
-
-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3-55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)150°C-55°C40V300mW-300MHzMMBT39041NPNSingle350mW300mW300MHzNPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V40V200mA300MHz300mV40V300MHz60V6V1001mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q1012000200mA
-
---Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)------MMBT3904----350mW-NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-40V200mA---300MHz---------------
-
-16 Weeks-Surface MountSC-89, SOT-4903SOT-523F150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)150°C-55°C-250mW-300MHzMMBT22221NPNSingle250mW250mW300MHzNPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V40V600mA100MHz1V40V300MHz75V6V75780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount30mg-2004-
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