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Infineon Technologies MMBT2222ALT1HTSA1
- Part Number:
- MMBT2222ALT1HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2463375-MMBT2222ALT1HTSA1
- Description:
- TRANS NPN 40V 0.6A SOT-23
- ECAD Model:
-
- Datasheet:
- MMBT2222ALT1HTSA1
Infineon Technologies MMBT2222ALT1HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies MMBT2222ALT1HTSA1.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC40V
- Max Power Dissipation330mW
- Current Rating600mA
- Frequency300MHz
- Base Part NumberMBT2222A
- Number of Elements1
- PolarityNPN
- Power Dissipation330mW
- Power - Max330mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Max Breakdown Voltage40V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222ALT1HTSA1 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 40V volts can be used.Product package SOT-23-3 comes from the supplier.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.A maximum collector current of 600mA volts is possible.
MMBT2222ALT1HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
the supplier device package of SOT-23-3
MMBT2222ALT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBT2222ALT1HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 40V volts can be used.Product package SOT-23-3 comes from the supplier.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.A maximum collector current of 600mA volts is possible.
MMBT2222ALT1HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
the supplier device package of SOT-23-3
MMBT2222ALT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBT2222ALT1HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222ALT1HTSA1 More Descriptions
Trans GP BJT NPN 40V 0.6A 330mW Automotive 3-Pin SOT-23 T/R
SMBT2222A Series NPN 40 V 600 mA SMT Silicon Switching Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, BIPOLAR, NPN, 40V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 330mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
SMBT2222A Series NPN 40 V 600 mA SMT Silicon Switching Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, BIPOLAR, NPN, 40V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 330mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBT2222ALT1HTSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusLead FreeWeightTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsTerminationECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransition FrequencyCollector Emitter Saturation VoltagehFE MinMax Junction Temperature (Tj)Continuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningMax FrequencyView Compare
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MMBT2222ALT1HTSA14 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3150°C TJTape & Reel (TR)2011Last Time Buy1 (Unlimited)150°C-65°C40V330mW600mA300MHzMBT2222A1NPN330mW330mWNPN40V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V40V600mA40V300MHz75V6VROHS3 CompliantLead Free------------------------------- -
15 WeeksSurface MountSurface MountSOT-5233--55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)---60V150mW-600mA200MHzMMBT2907A1-150mW-PNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V-600mA60V--60V-5VROHS3 CompliantLead Free2.012816mgSILICONAutomotive, AEC-Q101e3yes3SMD/SMTEAR99Matte Tin (Sn) - annealedOther TransistorsDUALGULL WING260303Single200MHzPNP200MHz-1.6V100150°C-600mA45ns900μm1.6mm800μmNo SVHCNo-
-
--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------MMBT3904---350mWNPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-40V200mA-300MHz----------------------------------
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16 WeeksSurface MountSurface MountSC-89, SOT-4903SOT-523F150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)150°C-55°C-250mW-300MHzMMBT22221NPN250mW250mWNPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V40V600mA40V300MHz75V6VROHS3 CompliantLead Free30mg--------------Single300MHz--1V75---780μm1.7mm980μm--100MHz
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