ON Semiconductor MMBT2222ALT1G

Name: MMBT2222ALT1G
Brand: ON Semiconductor
SKU: 3584995-MMBT2222ALT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT2222ALT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3584995-MMBT2222ALT1G

Description:: TRANS NPN 40V 0.6A SOT23

ECAD Model:

Datasheet:: MMBT2222ALT1G

Specifications

ON Semiconductor MMBT2222ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2222ALT1G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
600mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMBT2222A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Turn Off Time-Max (toff)
285ns
Height
1.11mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBT2222ALT1G Description The MMBT2222ALT1G is a bipolar NPN silicon transistor designed for linear, low-power surface mount and switching applications.
MMBT2222ALT1G Features These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
S Prefix for Automotive and Other Applications Requiring Unique
The site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
Ideal for Low Power Amplification and Switching
Epitaxial Planar Die Construction
MMBT2222ALT1G Applications Driver Modules like Relay Driver, LED driver, etc.
Switching loads up to 600mA
Motor speed control
Inverter and Rectifier circuits
Darlington Pair Designs

MMBT2222ALT1G More Descriptions

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 225mW Surface Mount SOT-23-3
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 600mA,PD 225mW,SOT-23
40V 225mW 100@150mA,10V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 40V 0.6A 300mW Automotive 3-Pin SOT-23 T/R
Transistor MMBT2222ALT1G, NPN, 600mA, 40V, SOT-23, ONS, RoHS
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Transistor NPN, SOT-23 40V 600mASurface Mount
TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 300hFE; Transist
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260

Product Comparison

The three parts on the right have similar specifications to MMBT2222ALT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Turn Off Time-Max (toff)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

Terminal Finish

Polarity/Channel Type

Continuous Collector Current

Termination

Current - Collector (Ic) (Max)

Turn On Time-Max (ton)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Polarity

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Max Frequency

Frequency - Transition

View Compare
MMBT2222ALT1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

40V

300mW

DUAL

GULL WING

260

600mA

300MHz

40

MMBT2222A

3

1

Single

225mW

SWITCHING

300MHz

NPN

40V

600mA

100 @ 150mA 10V

10nA ICBO

1V @ 50mA, 500mA

40V

300MHz

300mV

40V

75V

6V

100

150°C

285ns

1.11mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT4126-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-25V

300mW

DUAL

GULL WING

260

-200mA

250MHz

40

MMBT4126

3

1

Single

300mW

SWITCHING

250MHz

PNP

25V

200mA

120 @ 2mA 1V

50nA ICBO

400mV @ 5mA, 50mA

25V

250MHz

-400mV

25V

25V

-4V

120

-

-

1mm

3.05mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Surface Mount

7.994566mg

Matte Tin (Sn)

PNP

-200mA

-

-

-

-

-

-

-

-

-

-

-

MMBT2222ALT1G vs MMBT4126-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

SOT-523

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

150mW

DUAL

GULL WING

260

-600mA

200MHz

30

MMBT2907A

3

1

Single

150mW

-

200MHz

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

200MHz

-1.6V

60V

-60V

-5V

100

150°C

-

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

Surface Mount

2.012816mg

Matte Tin (Sn) - annealed

PNP

-600mA

SMD/SMT

600mA

45ns

-

-

-

-

-

-

-

-

MMBT2222ALT1G vs MMBT2907AT-7-F
MMBT2222AT

Fairchild/ON Semiconductor

-

16 Weeks

-

Surface Mount

SC-89, SOT-490

-

3

-

150°C TJ

Tape & Reel (TR)

-

2004

-

-

Last Time Buy

1 (Unlimited)

-

-

-

-

250mW

-

-

-

-

300MHz

-

MMBT2222

-

1

Single

250mW

-

300MHz

NPN

40V

600mA

100 @ 150mA 1V

-

1V @ 50mA, 500mA

40V

-

1V

40V

75V

6V

75

-

-

780μm

1.7mm

980μm

-

-

ROHS3 Compliant

Lead Free

Surface Mount

30mg

-

-

-

-

600mA

-

SOT-523F

150°C

-55°C

NPN

250mW

40V

100MHz

300MHz

MMBT2222ALT1G vs MMBT2222AT