Fairchild/ON Semiconductor MMBT200
- Part Number:
- MMBT200
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464608-MMBT200
- Description:
- TRANS PNP 45V 0.5A SOT-23
- Datasheet:
- MMBT200
Fairchild/ON Semiconductor MMBT200 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT200.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time39 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-500mA
- Frequency250MHz
- Base Part NumberMMBT200
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 5V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 200mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-200mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-6V
- hFE Min100
- Height930μm
- Length2.92mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT200 Description
The ON Semiconductor MMBT200 is a PNP General Purpose Amplifier housed in SOT-23-3.
MMBT200 Features
Sourced from Process 68
Tape and Reel
Designed for general purpose amplifier applications at collector currents to 300 mA.
MMBT200 Applications
General usage and suitable for many different applications
The ON Semiconductor MMBT200 is a PNP General Purpose Amplifier housed in SOT-23-3.
MMBT200 Features
Sourced from Process 68
Tape and Reel
Designed for general purpose amplifier applications at collector currents to 300 mA.
MMBT200 Applications
General usage and suitable for many different applications
MMBT200 More Descriptions
MMBT200 Series 45 V 0.5 A 350 mW PNP General Purpose Amplifier - SOT-23-3
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R / TRANS PNP 45V 0.5A SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
50nA 45V 350mW 500mA 100@10mA1V 250MHz 400mV@200mA20mA PNP -55¡Í~ 150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R / TRANS PNP 45V 0.5A SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
50nA 45V 350mW 500mA 100@10mA1V 250MHz 400mV@200mA20mA PNP -55¡Í~ 150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
The three parts on the right have similar specifications to MMBT200.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationPower - MaxFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingSeriesPin CountContinuous Collector CurrentREACH SVHCVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MMBT200LAST SHIPMENTS (Last Updated: 2 days ago)39 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-45V350mWDUALGULL WING-500mA250MHzMMBT2001Single350mWAMPLIFIER250MHzPNPPNP45V500mA100 @ 150mA 5V50nA400mV @ 20mA, 200mA45V250MHz-200mV45V-60V-6V100930μm2.92mm1.3mmNoROHS3 CompliantLead Free----------------
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-10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2011e3-Active1 (Unlimited)3-Tin (Sn)Other Transistors-225mWDUALGULL WING---1--SWITCHING-NPNNPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz---------ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3SINGLE300mW300MHz285ns35ns-------
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-15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other Transistors40V150mWDUALGULL WING200mA300MHzMMBT39041Single150mW-300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNoROHS3 CompliantLead Free26040----250ns70nsTinAutomotive, AEC-Q1013200mANo SVHC--
-
---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-----------------350mW300MHz-------40V200mA
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