ON Semiconductor MMBF2202PT1G
- Part Number:
- MMBF2202PT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490037-MMBF2202PT1G
- Description:
- MOSFET P-CH 20V 0.3A SOT323
- Datasheet:
- MMBF2202PT1G
ON Semiconductor MMBF2202PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF2202PT1G.
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150mW Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.2 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 5V
- Current - Continuous Drain (Id) @ 25°C300mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.7nC @ 10V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)0.3A
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
MMBF2202PT1G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 0.3A.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
MMBF2202PT1G Features
a 20V drain to source voltage (Vdss)
MMBF2202PT1G Applications
There are a lot of Rochester Electronics, LLC
MMBF2202PT1G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 0.3A.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
MMBF2202PT1G Features
a 20V drain to source voltage (Vdss)
MMBF2202PT1G Applications
There are a lot of Rochester Electronics, LLC
MMBF2202PT1G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
MMBF2202PT1G More Descriptions
Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 300mA Ta 300mA 150mW 1ns
MOSFET, P, 20V, SOT-323; Transistor Polarity: P Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 300mA; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: -10V
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 300mA Ta 300mA 150mW 1ns
MOSFET, P, 20V, SOT-323; Transistor Polarity: P Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 300mA; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: -10V
The three parts on the right have similar specifications to MMBF2202PT1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinRoHS StatusMountWeightPublishedECCN CodeSubcategoryVoltage - Rated DCReach Compliance CodeCurrent RatingNumber of ChannelsElement ConfigurationPower DissipationContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCLead FreeJEDEC-95 CodeLifecycle StatusNumber of PinsMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeView Compare
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MMBF2202PT1GSurface MountSC-70, SOT-323YESSILICON-55°C~150°C TJTape & Reel (TR)e3noObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)DUALGULL WING260403R-PDSO-G3COMMERCIAL1SINGLE WITH BUILT-IN DIODE150mW TaENHANCEMENT MODEP-ChannelSWITCHING2.2 Ω @ 200mA, 10V2.4V @ 250μA50pF @ 5V300mA Ta2.7nC @ 10V20V4.5V 10V±20V0.3A20VROHS3 Compliant--------------------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e0-Discontinued1 (Unlimited)3-MOSFET (Metal Oxide)DUALGULL WING235103R-PDSO-G3Not Qualified1-300mW TaENHANCEMENT MODEN-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 250μA40pF @ 10V500mA Ta--4.5V 10V±20V0.5A-Non-RoHS CompliantSurface Mount8.193012mg2006EAR99FET General Purpose Power60Vnot_compliant500mA1Single300mW500mA20V5Ohm60V5 pF1mm2.9mm1.3mmNo SVHCContains Lead----------
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)DUALGULL WING260403R-PDSO-G3COMMERCIAL1SINGLE WITH BUILT-IN DIODE225mW TaENHANCEMENT MODEN-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 1mA60pF @ 10V500mA Ta-60V10V±20V0.5A60VROHS3 Compliant-------------5Ohm-------TO-236AB---------
-
Surface MountTO-236-3, SC-59, SOT-23-3---Cut Tape (CT)e0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)MOSFET (Metal Oxide)DUALGULL WING240303-Not Qualified1--ENHANCEMENT MODEN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta------Non-RoHS CompliantSurface Mount-2006EAR99FET General Purpose Power20Vnot_compliant300mA-Single225mW300mA20V1Ohm62V-----Contains Lead-LAST SHIPMENTS (Last Updated: 1 week ago)3150°C-55°C8541.21.00.95225mW2.5ns2.5 ns15 ns
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