ON Semiconductor MMBF0201NLT1G
- Part Number:
- MMBF0201NLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3070540-MMBF0201NLT1G
- Description:
- MOSFET N-CH 20V 300MA SOT-23
- Datasheet:
- MMBF0201NLT1G
ON Semiconductor MMBF0201NLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF0201NLT1G.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1Ohm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max225mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation225mW
- Turn On Delay Time2.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1 Ω @ 300mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 5V
- Current - Continuous Drain (Id) @ 25°C300mA Ta
- Rise Time2.5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2.5 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)300mA
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage62V
- Nominal Vgs1.7 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBF0201NLT1G Description
MMBF0201NLT1G belongs to the family of N-channel power MOSFETs that are provided by ON Semiconductor. It is ideally suitable for use in small power management circuitry because it is able to provide minimal power loss and conserve energy. Moreover, it is also well suited for dc?dc converters, and power management in portable and battery?powered products.
MMBF0201NLT1G Features
Low RDS (on)
Interchangeable source & drain
Available in the SOT-23 package
Minimal power loss
Minimal conserve energy
MMBF0201NLT1G Applications
Computers
Printers
PCMCIA
Cards
Cellular and cordless telephones
MMBF0201NLT1G belongs to the family of N-channel power MOSFETs that are provided by ON Semiconductor. It is ideally suitable for use in small power management circuitry because it is able to provide minimal power loss and conserve energy. Moreover, it is also well suited for dc?dc converters, and power management in portable and battery?powered products.
MMBF0201NLT1G Features
Low RDS (on)
Interchangeable source & drain
Available in the SOT-23 package
Minimal power loss
Minimal conserve energy
MMBF0201NLT1G Applications
Computers
Printers
PCMCIA
Cards
Cellular and cordless telephones
MMBF0201NLT1G More Descriptions
MMBF0201NL: Small Signal MOSFET 20V 300mA 1 Ohm Single N-Channel SOT-23 Logic Level
N-Channel 20 V 1 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
Transistor, MOSFET, N-channel, 300mA, 20V, minature surface mount, SOT23 | ON Semiconductor MMBF0201NLT1G
20V 300mA 225mW 1´Î@10V300mA 2.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, N, 20V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipat
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N-Channel 20 V 1 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
Transistor, MOSFET, N-channel, 300mA, 20V, minature surface mount, SOT23 | ON Semiconductor MMBF0201NLT1G
20V 300mA 225mW 1´Î@10V300mA 2.4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, N, 20V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipat
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The three parts on the right have similar specifications to MMBF0201NLT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightReach Compliance CodeJESD-30 CodeQualification StatusNumber of ChannelsDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxFeedback Cap-Max (Crss)HeightLengthWidthConfigurationDrain to Source Voltage (Vdss)JEDEC-95 CodeDS Breakdown Voltage-MinMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationView Compare
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MMBF0201NLT1GACTIVE (Last Updated: 15 hours ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR991OhmTin (Sn)FET General Purpose Powers20VMOSFET (Metal Oxide)DUALGULL WING260300mA4031225mW TaSingleENHANCEMENT MODE225mW2.5 nsN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta2.5ns4.5V 10V±20V2.5 ns15 ns300mA1.7V20V62V1.7 VNo SVHCNoROHS3 CompliantLead Free---------------------
-
--Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2006e0-Discontinued1 (Unlimited)3EAR99--FET General Purpose Power60VMOSFET (Metal Oxide)DUALGULL WING235500mA1031300mW TaSingleENHANCEMENT MODE300mW-N-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 250μA40pF @ 10V500mA Ta-4.5V 10V±20V--500mA-20V60V-No SVHC-Non-RoHS CompliantContains LeadSurface Mount8.193012mgnot_compliantR-PDSO-G3Not Qualified10.5A5Ohm5 pF1mm2.9mm1.3mm--------
-
--Surface MountTO-236-3, SC-59, SOT-23-3YES-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)3--MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING260-4031225mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 1mA60pF @ 10V500mA Ta-10V±20V---------ROHS3 Compliant----R-PDSO-G3COMMERCIAL-0.5A5Ohm----SINGLE WITH BUILT-IN DIODE60VTO-236AB60V----
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountTO-236-3, SC-59, SOT-23-3-3--Cut Tape (CT)2006e0noObsolete1 (Unlimited)3EAR99-Tin/Lead (Sn/Pb)FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING240300mA3031-SingleENHANCEMENT MODE225mW-N-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta2.5ns--2.5 ns15 ns300mA-20V62V---Non-RoHS CompliantContains LeadSurface Mount-not_compliant-Not Qualified--1Ohm--------150°C-55°C8541.21.00.95225mW
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