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MMBF0201NLT1

ON Semiconductor MMBF0201NLT1

Part Number:
MMBF0201NLT1
Manufacturer:
ON Semiconductor
Ventron No:
2851638-MMBF0201NLT1
Description:
MOSFET N-CH 20V 300MA SOT-23
ECAD Model:
Datasheet:
MMBF0201NLT1

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Specifications
ON Semiconductor MMBF0201NLT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF0201NLT1.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    225mW
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    300mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    225mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1 Ω @ 300mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    300mA Ta
  • Rise Time
    2.5ns
  • Fall Time (Typ)
    2.5 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    300mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    1Ohm
  • Drain to Source Breakdown Voltage
    62V
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MMBF0201NLT1 Description
MMBF0201NLT1 miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc?dc converters, power management in portable and battery?powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

MMBF0201NLT1 Features
These Devices are Pb?Free and are RoHS Compliant
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT?23 Surface Mount Package Saves Board Space
MVMBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable*

MMBF0201NLT1 Applications
Automotive 
Personal electronics
Communications equipment
MMBF0201NLT1 More Descriptions
Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω
MOSFETs- Power and Small Signal 20V 300mA N-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to MMBF0201NLT1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Factory Lead Time
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Resistance
    Power Dissipation-Max
    Turn On Delay Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Weight
    JESD-30 Code
    Number of Channels
    Drain Current-Max (Abs) (ID)
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Configuration
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    View Compare
  • MMBF0201NLT1
    MMBF0201NLT1
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    Cut Tape (CT)
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -55°C
    8541.21.00.95
    FET General Purpose Power
    20V
    225mW
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    not_compliant
    300mA
    30
    3
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    225mW
    N-Channel
    SWITCHING
    1 Ω @ 300mA, 10V
    2.4V @ 250μA
    45pF @ 5V
    300mA Ta
    2.5ns
    2.5 ns
    15 ns
    300mA
    20V
    1Ohm
    62V
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBF0201NLT1G
    MMBF0201NLT1G
    ON Semiconductor
    ACTIVE (Last Updated: 15 hours ago)
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    -
    -
    FET General Purpose Powers
    20V
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    300mA
    40
    3
    -
    1
    Single
    ENHANCEMENT MODE
    225mW
    N-Channel
    SWITCHING
    1 Ω @ 300mA, 10V
    2.4V @ 250μA
    45pF @ 5V
    300mA Ta
    2.5ns
    2.5 ns
    15 ns
    300mA
    20V
    -
    62V
    ROHS3 Compliant
    Lead Free
    4 Weeks
    YES
    SILICON
    -55°C~150°C TJ
    1Ohm
    225mW Ta
    2.5 ns
    4.5V 10V
    ±20V
    1.7V
    1.7 V
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MMBF0201NLT1 vs MMBF0201NLT1G
  • MMBF170-7
    MMBF170-7
    Diodes Incorporated
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    Tape & Reel (TR)
    2006
    e0
    -
    Discontinued
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    -
    FET General Purpose Power
    60V
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    235
    not_compliant
    500mA
    10
    3
    Not Qualified
    1
    Single
    ENHANCEMENT MODE
    300mW
    N-Channel
    SWITCHING
    5 Ω @ 200mA, 10V
    3V @ 250μA
    40pF @ 10V
    500mA Ta
    -
    -
    -
    500mA
    20V
    5Ohm
    60V
    Non-RoHS Compliant
    Contains Lead
    -
    -
    SILICON
    -55°C~150°C TJ
    -
    300mW Ta
    -
    4.5V 10V
    ±20V
    -
    -
    No SVHC
    -
    8.193012mg
    R-PDSO-G3
    1
    0.5A
    5 pF
    1mm
    2.9mm
    1.3mm
    -
    -
    -
    -
    MMBF0201NLT1 vs MMBF170-7
  • MMBF170LT3G
    MMBF170LT3G
    ON Semiconductor
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    -
    40
    3
    COMMERCIAL
    1
    -
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    5 Ω @ 200mA, 10V
    3V @ 1mA
    60pF @ 10V
    500mA Ta
    -
    -
    -
    -
    -
    5Ohm
    -
    ROHS3 Compliant
    -
    -
    YES
    SILICON
    -55°C~150°C TJ
    -
    225mW Ta
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    R-PDSO-G3
    -
    0.5A
    -
    -
    -
    -
    SINGLE WITH BUILT-IN DIODE
    60V
    TO-236AB
    60V
    MMBF0201NLT1 vs MMBF170LT3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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