Diodes Incorporated MMBF170-7
- Part Number:
- MMBF170-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2853484-MMBF170-7
- Description:
- MOSFET N-CH 60V 500MA SOT23-3
- ECAD Model:
-
- Datasheet:
- MMBF170-7
Diodes Incorporated MMBF170-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBF170-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight8.193012mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds40pF @ 10V
- Current - Continuous Drain (Id) @ 25°C500mA Ta
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)500mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.5A
- Drain-source On Resistance-Max5Ohm
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBF170-7 Overview
A device's maximal input capacitance is 40pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
MMBF170-7 Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage
MMBF170-7 Applications
There are a lot of Diodes Incorporated
MMBF170-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 40pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
MMBF170-7 Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage
MMBF170-7 Applications
There are a lot of Diodes Incorporated
MMBF170-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
MMBF170-7 More Descriptions
MOSFET N-CH 60V 500MA SOT23-3
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistors
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistors
The three parts on the right have similar specifications to MMBF170-7.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRoHS StatusLead FreeLifecycle StatusFactory Lead TimeSurface MountNumber of PinsPbfree CodeResistanceTerminal FinishTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageNominal VgsRadiation HardeningConfigurationDrain to Source Voltage (Vdss)JEDEC-95 CodeDS Breakdown Voltage-MinMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationView Compare
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MMBF170-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-38.193012mgSILICON-55°C~150°C TJTape & Reel (TR)2006e0Discontinued1 (Unlimited)3EAR99FET General Purpose Power60VMOSFET (Metal Oxide)DUALGULL WING235not_compliant500mA103R-PDSO-G3Not Qualified11300mW TaSingleENHANCEMENT MODE300mWN-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 250μA40pF @ 10V500mA Ta4.5V 10V±20V500mA20V0.5A5Ohm60V5 pF1mm2.9mm1.3mmNo SVHCNon-RoHS CompliantContains Lead----------------------- -
-Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2006e3Active1 (Unlimited)3EAR99FET General Purpose Powers20VMOSFET (Metal Oxide)DUALGULL WING260-300mA403--1-225mW TaSingleENHANCEMENT MODE225mWN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta4.5V 10V±20V300mA20V--62V----No SVHCROHS3 CompliantLead FreeACTIVE (Last Updated: 15 hours ago)4 WeeksYES3yes1OhmTin (Sn)2.5 ns2.5ns2.5 ns15 ns1.7V1.7 VNo--------
-
-Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)-e3Obsolete1 (Unlimited)3---MOSFET (Metal Oxide)DUALGULL WING260--403R-PDSO-G3COMMERCIAL1-225mW Ta-ENHANCEMENT MODE-N-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 1mA60pF @ 10V500mA Ta10V±20V--0.5A5Ohm------ROHS3 Compliant---YES-yes-MATTE TIN-------SINGLE WITH BUILT-IN DIODE60VTO-236AB60V----
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3---Cut Tape (CT)2006e0Obsolete1 (Unlimited)3EAR99FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING240not_compliant300mA303-Not Qualified1--SingleENHANCEMENT MODE225mWN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta--300mA20V-1Ohm62V-----Non-RoHS CompliantContains LeadLAST SHIPMENTS (Last Updated: 1 week ago)--3no-Tin/Lead (Sn/Pb)-2.5ns2.5 ns15 ns-------150°C-55°C8541.21.00.95225mW
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