MMBF2202PT1

ON Semiconductor MMBF2202PT1

Part Number:
MMBF2202PT1
Manufacturer:
ON Semiconductor
Ventron No:
3071075-MMBF2202PT1
Description:
MOSFET P-CH 20V 0.3A SOT-323
ECAD Model:
Datasheet:
MMBF2202PT1

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Specifications
ON Semiconductor MMBF2202PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF2202PT1.
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.2 Ω @ 200mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    300mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.7nC @ 10V
  • Drain to Source Voltage (Vdss)
    20V
  • Drain Current-Max (Abs) (ID)
    0.3A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    Non-RoHS Compliant
Description
MMBF2202PT1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 5V.The drain current is the maximum continuous current this device can conduct, which is 0.3A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.

MMBF2202PT1 Features
a 20V drain to source voltage (Vdss)


MMBF2202PT1 Applications
There are a lot of Rochester Electronics, LLC
MMBF2202PT1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
MMBF2202PT1 More Descriptions
Cut Tape (CT) Surface Mount P-Channel Single Mosfet Transistor 300mA Ta 300mA 150mW 1ns
Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70
MOSFETs- Power and Small Signal 20V 300mA P-Channel No-Cancel/No-Return
Trans MOSFET P-CH 20V 0.3A 3-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to MMBF2202PT1.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Number of Pins
    Operating Temperature
    Published
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Lead Free
    Mount
    Weight
    Reach Compliance Code
    Number of Channels
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Max Power Dissipation
    View Compare
  • MMBF2202PT1
    MMBF2202PT1
    Surface Mount
    SC-70, SOT-323
    YES
    SILICON
    Tape & Reel (TR)
    e0
    yes
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    30
    3
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    2.2 Ω @ 200mA, 10V
    2.4V @ 250μA
    50pF @ 5V
    300mA Ta
    2.7nC @ 10V
    20V
    0.3A
    20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBF0201NLT1G
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    -
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1 Ω @ 300mA, 10V
    2.4V @ 250μA
    45pF @ 5V
    300mA Ta
    -
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 15 hours ago)
    4 Weeks
    3
    -55°C~150°C TJ
    2006
    EAR99
    1Ohm
    FET General Purpose Powers
    20V
    300mA
    225mW Ta
    Single
    225mW
    2.5 ns
    2.5ns
    4.5V 10V
    ±20V
    2.5 ns
    15 ns
    300mA
    1.7V
    20V
    62V
    1.7 V
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBF170-7
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    e0
    -
    Discontinued
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    235
    10
    3
    R-PDSO-G3
    Not Qualified
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    5 Ω @ 200mA, 10V
    3V @ 250μA
    40pF @ 10V
    500mA Ta
    -
    -
    0.5A
    -
    Non-RoHS Compliant
    -
    -
    -
    -55°C~150°C TJ
    2006
    EAR99
    -
    FET General Purpose Power
    60V
    500mA
    300mW Ta
    Single
    300mW
    -
    -
    4.5V 10V
    ±20V
    -
    -
    500mA
    -
    20V
    60V
    -
    No SVHC
    -
    Contains Lead
    Surface Mount
    8.193012mg
    not_compliant
    1
    5Ohm
    5 pF
    1mm
    2.9mm
    1.3mm
    -
    -
    -
    -
  • MMBF0201NLT1
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    Cut Tape (CT)
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    30
    3
    -
    Not Qualified
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1 Ω @ 300mA, 10V
    2.4V @ 250μA
    45pF @ 5V
    300mA Ta
    -
    -
    -
    -
    Non-RoHS Compliant
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    3
    -
    2006
    EAR99
    -
    FET General Purpose Power
    20V
    300mA
    -
    Single
    225mW
    -
    2.5ns
    -
    -
    2.5 ns
    15 ns
    300mA
    -
    20V
    62V
    -
    -
    -
    Contains Lead
    Surface Mount
    -
    not_compliant
    -
    1Ohm
    -
    -
    -
    -
    150°C
    -55°C
    8541.21.00.95
    225mW
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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