ON Semiconductor MMBF2202PT1
- Part Number:
- MMBF2202PT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3071075-MMBF2202PT1
- Description:
- MOSFET P-CH 20V 0.3A SOT-323
- Datasheet:
- MMBF2202PT1
ON Semiconductor MMBF2202PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBF2202PT1.
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.2 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 5V
- Current - Continuous Drain (Id) @ 25°C300mA Ta
- Gate Charge (Qg) (Max) @ Vgs2.7nC @ 10V
- Drain to Source Voltage (Vdss)20V
- Drain Current-Max (Abs) (ID)0.3A
- DS Breakdown Voltage-Min20V
- RoHS StatusNon-RoHS Compliant
MMBF2202PT1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 5V.The drain current is the maximum continuous current this device can conduct, which is 0.3A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.
MMBF2202PT1 Features
a 20V drain to source voltage (Vdss)
MMBF2202PT1 Applications
There are a lot of Rochester Electronics, LLC
MMBF2202PT1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 5V.The drain current is the maximum continuous current this device can conduct, which is 0.3A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.
MMBF2202PT1 Features
a 20V drain to source voltage (Vdss)
MMBF2202PT1 Applications
There are a lot of Rochester Electronics, LLC
MMBF2202PT1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
MMBF2202PT1 More Descriptions
Cut Tape (CT) Surface Mount P-Channel Single Mosfet Transistor 300mA Ta 300mA 150mW 1ns
Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70
MOSFETs- Power and Small Signal 20V 300mA P-Channel No-Cancel/No-Return
Trans MOSFET P-CH 20V 0.3A 3-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70
MOSFETs- Power and Small Signal 20V 300mA P-Channel No-Cancel/No-Return
Trans MOSFET P-CH 20V 0.3A 3-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to MMBF2202PT1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinRoHS StatusLifecycle StatusFactory Lead TimeNumber of PinsOperating TemperaturePublishedECCN CodeResistanceSubcategoryVoltage - Rated DCCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsREACH SVHCRadiation HardeningLead FreeMountWeightReach Compliance CodeNumber of ChannelsDrain-source On Resistance-MaxFeedback Cap-Max (Crss)HeightLengthWidthMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationView Compare
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MMBF2202PT1Surface MountSC-70, SOT-323YESSILICONTape & Reel (TR)e0yesObsolete1 (Unlimited)3TIN LEADMOSFET (Metal Oxide)DUALGULL WING240303R-PDSO-G3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEP-ChannelSWITCHING2.2 Ω @ 200mA, 10V2.4V @ 250μA50pF @ 5V300mA Ta2.7nC @ 10V20V0.3A20VNon-RoHS Compliant-----------------------------------------
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)e3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)DUALGULL WING260403--1-ENHANCEMENT MODEN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta----ROHS3 CompliantACTIVE (Last Updated: 15 hours ago)4 Weeks3-55°C~150°C TJ2006EAR991OhmFET General Purpose Powers20V300mA225mW TaSingle225mW2.5 ns2.5ns4.5V 10V±20V2.5 ns15 ns300mA1.7V20V62V1.7 VNo SVHCNoLead Free-------------
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICONTape & Reel (TR)e0-Discontinued1 (Unlimited)3-MOSFET (Metal Oxide)DUALGULL WING235103R-PDSO-G3Not Qualified1-ENHANCEMENT MODEN-ChannelSWITCHING5 Ω @ 200mA, 10V3V @ 250μA40pF @ 10V500mA Ta--0.5A-Non-RoHS Compliant----55°C~150°C TJ2006EAR99-FET General Purpose Power60V500mA300mW TaSingle300mW--4.5V 10V±20V--500mA-20V60V-No SVHC-Contains LeadSurface Mount8.193012mgnot_compliant15Ohm5 pF1mm2.9mm1.3mm----
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Surface MountTO-236-3, SC-59, SOT-23-3--Cut Tape (CT)e0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)MOSFET (Metal Oxide)DUALGULL WING240303-Not Qualified1-ENHANCEMENT MODEN-ChannelSWITCHING1 Ω @ 300mA, 10V2.4V @ 250μA45pF @ 5V300mA Ta----Non-RoHS CompliantLAST SHIPMENTS (Last Updated: 1 week ago)-3-2006EAR99-FET General Purpose Power20V300mA-Single225mW-2.5ns--2.5 ns15 ns300mA-20V62V---Contains LeadSurface Mount-not_compliant-1Ohm----150°C-55°C8541.21.00.95225mW
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