Diodes Incorporated MMBF170-7-F

Name: MMBF170-7-F
Brand: Diodes Incorporated
SKU: 2478943-MMBF170-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBF170-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2478943-MMBF170-7-F

Description:: MOSFET N-CH 60V 500MA SOT23-3

ECAD Model:

Datasheet:: MMBF170-7-F

Specifications

Diodes Incorporated MMBF170-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBF170-7-F.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
5Ohm
Additional Feature
HIGH RELIABILITY
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
500mA
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
40pF @ 10V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
500mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
70V
Dual Supply Voltage
60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.1 V
Feedback Cap-Max (Crss)
5 pF
Height
1.1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBF170-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 40pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 500mA.With a drain-source breakdown voltage of 70V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 70V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 10 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2.1V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

MMBF170-7-F Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 10 ns
a threshold voltage of 2.1V

MMBF170-7-F Applications
There are a lot of Diodes Incorporated
MMBF170-7-F applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

MMBF170-7-F More Descriptions

Transistor MOSFET N Channel 60 Volt 0.5 Amp 3 Pin SOT-23 Tape And Reel
N-Channel 60 V 5 Ohm Surface Mount Enhancement Mode Transistor-SOT-23-3
MOSFET, N CH, 60V, 0.5A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:60V; On Resistance
Mosfet, N Channel, 60V, 800Ma, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:800Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Diodes Inc. MMBF170-7-F
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5.3 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300
MOSFET, N CH, 60V, 0.5A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to MMBF170-7-F.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain-source On Resistance-Max

Surface Mount

Terminal Finish

Configuration

Drain to Source Voltage (Vdss)

JEDEC-95 Code

DS Breakdown Voltage-Min

Lifecycle Status

Max Operating Temperature

Min Operating Temperature

HTS Code

Max Power Dissipation

Rise Time

Fall Time (Typ)

View Compare
MMBF170-7-F

Diodes Incorporated

14 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

5Ohm

HIGH RELIABILITY

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

500mA

3

1

1

300mW Ta

Single

ENHANCEMENT MODE

300mW

10 ns

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 250μA

40pF @ 10V

500mA Ta

4.5V 10V

±20V

10 ns

500mA

2.1V

20V

0.5A

70V

60V

150°C

2.1 V

5 pF

1.1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBF170-7

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

8.193012mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e0

-

Discontinued

1 (Unlimited)

3

-

EAR99

-

-

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

500mA

3

1

1

300mW Ta

Single

ENHANCEMENT MODE

300mW

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 250μA

40pF @ 10V

500mA Ta

4.5V 10V

±20V

-

500mA

-

20V

0.5A

60V

-

-

-

5 pF

1mm

2.9mm

1.3mm

No SVHC

-

Non-RoHS Compliant

Contains Lead

FET General Purpose Power

235

not_compliant

10

R-PDSO-G3

Not Qualified

5Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBF170-7-F vs MMBF170-7
MMBF170LT3G

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

3

1

-

225mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

5 Ω @ 200mA, 10V

3V @ 1mA

60pF @ 10V

500mA Ta

10V

±20V

-

-

-

-

0.5A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

260

-

40

R-PDSO-G3

COMMERCIAL

5Ohm

YES

MATTE TIN

SINGLE WITH BUILT-IN DIODE

60V

TO-236AB

60V

-

-

-

-

-

-

-

MMBF170-7-F vs MMBF170LT3G
MMBF0201NLT1

ON Semiconductor

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-

Cut Tape (CT)

2006

e0

no

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

300mA

3

1

-

-

Single

ENHANCEMENT MODE

225mW

-

N-Channel

SWITCHING

1 Ω @ 300mA, 10V

2.4V @ 250μA

45pF @ 5V

300mA Ta

-

-

15 ns

300mA

-

20V

-

62V

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

FET General Purpose Power

240

not_compliant

30

-

Not Qualified

1Ohm

-

Tin/Lead (Sn/Pb)

-

-

-

-

LAST SHIPMENTS (Last Updated: 1 week ago)

150°C

-55°C

8541.21.00.95

225mW

2.5ns

2.5 ns

MMBF170-7-F vs MMBF0201NLT1