ON Semiconductor MJD350T4G
- Part Number:
- MJD350T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845820-MJD350T4G
- Description:
- TRANS PNP 300V 0.5A DPAK
- Datasheet:
- MJD350T4G
ON Semiconductor MJD350T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD350T4G.
- Lifecycle StatusACTIVE (Last Updated: 7 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD350
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)3V
- hFE Min30
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD350T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 10MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 10MHz
MJD350T4G Applications
There are a lot of ON Semiconductor
MJD350T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 10MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 10MHz
MJD350T4G Applications
There are a lot of ON Semiconductor
MJD350T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD350T4G More Descriptions
ON Semi MJD350T4G PNP High Voltage Bipolar Transistor; 0.5 A; 300 V; 3-Pin DPAK
Trans GP BJT PNP 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
300V 15W 30@50mA,10V 500mA PNP TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
BIPOLAR TRANSISTOR, PNP, -300V; TRANSIST; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE
Transistor, Pnp, -300V, -0.5A, To-252-4; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD350T4G.
Trans GP BJT PNP 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
300V 15W 30@50mA,10V 500mA PNP TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
BIPOLAR TRANSISTOR, PNP, -300V; TRANSIST; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE
Transistor, Pnp, -300V, -0.5A, To-252-4; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD350T4G.
The three parts on the right have similar specifications to MJD350T4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishTerminal PositionPolarityConfigurationJEDEC-95 CodeVce Saturation (Max) @ Ib, IcFrequencyGain Bandwidth ProductVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD350T4GACTIVE (Last Updated: 7 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJCut Tape (CT)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-300V1.56WGULL WING260-500mA40MJD3503R-PSSO-G21Single1.56WCOLLECTORSWITCHINGPNPPNP300V500mA30 @ 50mA 10V100μA300V10MHz1V300V300V3V302.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free------------------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3-SILICON150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)2EAR99Other Transistors-15WGULL WING260--MJD363R-PSSO-G21-15WCOLLECTORSWITCHING-PNP60V3A60 @ 1A 4V20μA ICBO60V--60V60V5V30----NoROHS3 Compliant-Surface MountMatte Tin (Sn) - annealedSINGLENPN, PNPSINGLETO-252AA900mV @ 150mA, 3A----------------
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ACTIVE (Last Updated: 1 week ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-40V1.56WGULL WING260-3A40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIERPNPPNP40V3A10 @ 3A 4V50μA40V3MHz1.2V-40V5V25----NoROHS3 CompliantLead Free-Tin (Sn)----1.2V @ 375mA, 3A3MHz3MHz--------------
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--------------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
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