MJD350T4G

ON Semiconductor MJD350T4G

Part Number:
MJD350T4G
Manufacturer:
ON Semiconductor
Ventron No:
2845820-MJD350T4G
Description:
TRANS PNP 300V 0.5A DPAK
ECAD Model:
Datasheet:
MJD350T4G

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Specifications
ON Semiconductor MJD350T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD350T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -300V
  • Max Power Dissipation
    1.56W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -500mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD350
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.56W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    100μA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    10MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    300V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    30
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD350T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 10MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

MJD350T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 10MHz


MJD350T4G Applications
There are a lot of ON Semiconductor
MJD350T4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD350T4G More Descriptions
ON Semi MJD350T4G PNP High Voltage Bipolar Transistor; 0.5 A; 300 V; 3-Pin DPAK
Trans GP BJT PNP 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
300V 15W 30@50mA,10V 500mA PNP TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
BIPOLAR TRANSISTOR, PNP, -300V; TRANSIST; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE
Transistor, Pnp, -300V, -0.5A, To-252-4; Transistor Polarity:Pnp; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD350T4G.
Product Comparison
The three parts on the right have similar specifications to MJD350T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Terminal Position
    Polarity
    Configuration
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Frequency
    Gain Bandwidth Product
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • MJD350T4G
    MJD350T4G
    ACTIVE (Last Updated: 7 hours ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Cut Tape (CT)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -300V
    1.56W
    GULL WING
    260
    -500mA
    40
    MJD350
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    300V
    500mA
    30 @ 50mA 10V
    100μA
    300V
    10MHz
    1V
    300V
    300V
    3V
    30
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD361T4-A
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -
    15W
    GULL WING
    260
    -
    -
    MJD36
    3
    R-PSSO-G2
    1
    -
    15W
    COLLECTOR
    SWITCHING
    -
    PNP
    60V
    3A
    60 @ 1A 4V
    20μA ICBO
    60V
    -
    -
    60V
    60V
    5V
    30
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Surface Mount
    Matte Tin (Sn) - annealed
    SINGLE
    NPN, PNP
    SINGLE
    TO-252AA
    900mV @ 150mA, 3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD32RLG
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -40V
    1.56W
    GULL WING
    260
    -3A
    40
    MJD32
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    PNP
    PNP
    40V
    3A
    10 @ 3A 4V
    50μA
    40V
    3MHz
    1.2V
    -
    40V
    5V
    25
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    1.2V @ 375mA, 3A
    3MHz
    3MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD340T4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300V
    -
    NPN
    D-Pak
    -
    15W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    -
    30 @ 50mA, 10V
    100µA (ICBO)
    500mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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