ON Semiconductor MJD340T4G
- Part Number:
- MJD340T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068711-MJD340T4G
- Description:
- TRANS NPN 300V 0.5A DPAK
- ECAD Model:
-
- Datasheet:
- MJD340T4G
ON Semiconductor MJD340T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD340T4G.
- Lifecycle StatusACTIVE (Last Updated: 3 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD340
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage300V
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage300V
- Frequency - Transition10MHz
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)3V
- hFE Min30
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD340T4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Emitter base voltages of 3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MJD340T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340T4G Applications
There are a lot of ON Semiconductor
MJD340T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Emitter base voltages of 3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MJD340T4G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340T4G Applications
There are a lot of ON Semiconductor
MJD340T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD340T4G More Descriptions
ON Semi MJD340T4G NPN High Voltage Bipolar Transistor; 0.5 A; 300 V; 3-Pin DPAK
Trans GP BJT NPN 300V 0.5A 1560mW 3-Pin(2 Tab) DPAK T/R
300V 15W 30@50mA,10V 500mA NPN TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Product that comes on tape, but is not reeled (Al
TRANSISTOR, NPN, 300V, 0.5A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Tra
Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:10MHz; DC Current Gain hFE Min:30hFERoHS Compliant: Yes
Trans GP BJT NPN 300V 0.5A 1560mW 3-Pin(2 Tab) DPAK T/R
300V 15W 30@50mA,10V 500mA NPN TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 300V 0.5A 3-Pin(2 Tab) DPAK T/R - Product that comes on tape, but is not reeled (Al
TRANSISTOR, NPN, 300V, 0.5A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Tra
Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:10MHz; DC Current Gain hFE Min:30hFERoHS Compliant: Yes
The three parts on the right have similar specifications to MJD340T4G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Terminal FinishFrequencyGain Bandwidth ProductVce Saturation (Max) @ Ib, IcTransition FrequencyView Compare
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MJD340T4GACTIVE (Last Updated: 3 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors300V1.56WGULL WING260500mA40MJD3403R-PSSO-G21Single1.56WCOLLECTORSWITCHINGNPNNPN300V500mA30 @ 50mA 10V100μA300V1V300V10MHz300V3V302.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-------------------- -
-----------------------------------------------------100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A-----
-
ACTIVE (Last Updated: 1 week ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-40V1.56WGULL WING260-3A40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIERPNPPNP40V3A10 @ 3A 4V50μA40V1.2V--40V5V25----NoROHS3 CompliantLead Free--------------Tin (Sn)3MHz3MHz1.2V @ 375mA, 3A3MHz
-
-----------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA-----
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