ON Semiconductor MJD31CRLG
- Part Number:
- MJD31CRLG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845761-MJD31CRLG
- Description:
- TRANS NPN 100V 3A DPAK
- Datasheet:
- MJD31CRLG
ON Semiconductor MJD31CRLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31CRLG.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD31
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD31CRLG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 3A volts.
MJD31CRLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CRLG Applications
There are a lot of ON Semiconductor
MJD31CRLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 3A volts.
MJD31CRLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CRLG Applications
There are a lot of ON Semiconductor
MJD31CRLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CRLG More Descriptions
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
3.0 A, 100 V NPN Bipolar Power Transistor
Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK T/R
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3
Bipolar Transistors - BJT 3A 100V 15W NPN
Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:3Mhz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJD31CRLG.
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
3.0 A, 100 V NPN Bipolar Power Transistor
Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK T/R
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3
Bipolar Transistors - BJT 3A 100V 15W NPN
Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:3Mhz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJD31CRLG.
The three parts on the right have similar specifications to MJD31CRLG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeHeightLengthWidthREACH SVHCTerminal FinishVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD31CRLGACTIVE (Last Updated: 6 days ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V100V5V25NoROHS3 CompliantLead Free--------------------
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ACTIVE (Last Updated: 4 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V-100V5V25NoROHS3 CompliantLead Free2.3876mm6.7056mm6.223mmNo SVHC---------------
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ACTIVE (Last Updated: 1 week ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-40V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP40V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A40V3MHz1.2V-40V5V25NoROHS3 CompliantLead Free----Tin (Sn)--------------
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--------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
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