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MJD112-TP

Micro Commercial Co MJD112-TP

Part Number:
MJD112-TP
Manufacturer:
Micro Commercial Co
Ventron No:
2463400-MJD112-TP
Description:
TRANS NPN 100V 2A DPAK
ECAD Model:
Datasheet:
MJD112

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Specifications
Micro Commercial Co MJD112-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MJD112-TP.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MJD112
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power - Max
    1W
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A 3V
  • Current - Collector Cutoff (Max)
    20nA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Current - Collector (Ic) (Max)
    2A
  • Transition Frequency
    25MHz
  • Frequency - Transition
    25MHz
  • RoHS Status
    ROHS3 Compliant
Description
MJD112-TP Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 25MHz.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.

MJD112-TP Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
a transition frequency of 25MHz


MJD112-TP Applications
There are a lot of Micro Commercial Co
MJD112-TP applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD112-TP More Descriptions
Transistors Bipolar - BJT TRANS NPN 100V 2A DPAK tape & reel
Trans Darlington NPN 100V 2A 1000mW 3-Pin(2 Tab) DPAK T/R
Power Transistor / 13" REEL
Product Comparison
The three parts on the right have similar specifications to MJD112-TP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lifecycle Status
    Contact Plating
    Number of Pins
    JESD-609 Code
    Pbfree Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Terminal Finish
    Reach Compliance Code
    View Compare
  • MJD112-TP
    MJD112-TP
    Micro Commercial Co
    12 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2008
    Active
    1 (Unlimited)
    2
    EAR99
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    MJD112
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1W
    NPN
    NPN
    1000 @ 2A 3V
    20nA
    3V @ 40mA, 4A
    100V
    2A
    25MHz
    25MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD127T4G
    MJD127T4G
    ON Semiconductor
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    Active
    1 (Unlimited)
    2
    EAR99
    -
    GULL WING
    260
    40
    MJD127
    3
    R-PSSO-G2
    -
    1
    -
    -
    -
    PNP - Darlington
    1000 @ 4A 4V
    10μA
    4V @ 80mA, 8A
    -
    -
    4MHz
    4MHz
    ROHS3 Compliant
    ACTIVE (Last Updated: 4 days ago)
    Tin
    3
    e3
    yes
    Other Transistors
    -100V
    1.75W
    -8A
    PNP
    Single
    20W
    COLLECTOR
    SWITCHING
    Halogen Free
    100V
    8A
    100V
    2V
    100V
    100V
    5V
    8A
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    MJD112-TP vs MJD127T4G
  • MJD127T4
    MJD127T4
    STMicroelectronics
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.75W
    -
    PNP - Darlington
    1000 @ 4A 4V
    10μA
    4V @ 80mA, 8A
    100V
    8A
    -
    4MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DPAK
    -
    -
    MJD112-TP vs MJD127T4
  • MJD117T4
    MJD117T4
    ON Semiconductor
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -65°C~150°C TJ
    Cut Tape (CT)
    2005
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    GULL WING
    240
    30
    MJD117
    3
    R-PSSO-G2
    Not Qualified
    1
    -
    -
    -
    PNP - Darlington
    1000 @ 2A 3V
    20μA
    2V @ 8mA, 2A
    -
    -
    25MHz
    25MHz
    Non-RoHS Compliant
    OBSOLETE (Last Updated: 3 days ago)
    -
    3
    e0
    no
    Other Transistors
    -100V
    1.75W
    -2A
    PNP
    Single
    20W
    COLLECTOR
    SWITCHING
    -
    100V
    2A
    100V
    2V
    100V
    100V
    5V
    2A
    -
    -
    -
    No SVHC
    -
    Lead Free
    -
    Tin/Lead (Sn/Pb)
    not_compliant
    MJD112-TP vs MJD117T4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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