ON Semiconductor MGSF1N03LT1G
- Part Number:
- MGSF1N03LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2478015-MGSF1N03LT1G
- Description:
- MOSFET N-CH 30V 1.6A SOT-23
- Datasheet:
- MGSF1N03LT1G
ON Semiconductor MGSF1N03LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MGSF1N03LT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time24 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance80MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating750mA
- Pin Count3
- Number of Elements1
- Power Dissipation-Max420mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation730mW
- Turn On Delay Time2.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 1.2A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 5V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Rise Time1ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)1 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)2.1A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.7 V
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The MGSF1N03LT1G is a MOSFET – Single, N-Channel, SOT-23, 30 V, 2.1 A. Because of their small size and low RDS(on), these micro-surface mount MOSFETs are perfect for use in power management circuitry for sensitive space applications. Dc-dc converters and power management are typical applications in portable and battery-powered equipment such as computers, printers, PCMCIA cards, and cellular and cordless telephones.
Features
MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT?23 Surface Mount Package Saves Board Space
High Scalability
Applications
DC?DC converters
Power management in portable
Computers
Printers
PCMCIA cards
Cellular
Cordless telephones
The MGSF1N03LT1G is a MOSFET – Single, N-Channel, SOT-23, 30 V, 2.1 A. Because of their small size and low RDS(on), these micro-surface mount MOSFETs are perfect for use in power management circuitry for sensitive space applications. Dc-dc converters and power management are typical applications in portable and battery-powered equipment such as computers, printers, PCMCIA cards, and cellular and cordless telephones.
Features
MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT?23 Surface Mount Package Saves Board Space
High Scalability
Applications
DC?DC converters
Power management in portable
Computers
Printers
PCMCIA cards
Cellular
Cordless telephones
MGSF1N03LT1G More Descriptions
MGSF1N03L: Small Signal MOSFET 30V 1.6A 100 mOhm Single N-Channel SOT-23
N-Channel 30 V 80 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23
Trans MOSFET N-CH 30V 2.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.6A SOT-23
Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N-Channel 30 V 80 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23
Trans MOSFET N-CH 30V 2.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.6A SOT-23
Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
The three parts on the right have similar specifications to MGSF1N03LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxDrain Current-Max (Abs) (ID)Gate Charge (Qg) (Max) @ VgsPulsed Drain Current-Max (IDM)View Compare
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MGSF1N03LT1GACTIVE (Last Updated: 6 days ago)24 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)1998e3yesActive1 (Unlimited)3EAR9980MOhmTin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING750mA31420mW TaSingleENHANCEMENT MODE730mW2.5 nsN-ChannelSWITCHING100m Ω @ 1.2A, 10V2.4V @ 250μA140pF @ 5V1.6A Ta1ns4.5V 10V±20V1 ns16 ns2.1A1.7V20V30V1.7 V1.016mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free---------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)3EAR99-Tin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING1.6A31420mW TaSingleENHANCEMENT MODE730mW-N-ChannelSWITCHING100m Ω @ 1.2A, 10V2.4V @ 250μA140pF @ 5V1.6A Ta1ns4.5V 10V±20V1 ns16 ns1.6A-20V30V------RoHS CompliantLead Free8541.21.00.95NOT SPECIFIEDNOT SPECIFIEDNot Qualified0.1Ohm---
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ACTIVE (Last Updated: 6 hours ago)11 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR9990MOhmTin (Sn)FET General Purpose Powers20VMOSFET (Metal Oxide)DUALGULL WING750mA31400mW TaSingleENHANCEMENT MODE400mW2.5 nsN-ChannelSWITCHING90m Ω @ 1.2A, 10V2.4V @ 250μA125pF @ 5V750mA Ta1ns4.5V 10V±20V1 ns16 ns750mA1.7V20V20V1.7 V1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----0.75A--
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ACTIVE (Last Updated: 8 hours ago)10 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJCut Tape (CT)2001e3yesActive1 (Unlimited)3EAR9985MOhmTin (Sn)FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING2.8A311.25W TaSingleENHANCEMENT MODE1.25W6 nsN-ChannelSWITCHING85m Ω @ 3.6A, 4.5V1V @ 250μA150pF @ 5V2.8A Ta95ns2.5V 4.5V±8V95 ns28 ns2.8A1V8V20V500 mV1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-26040---3.5nC @ 4V5A
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