ON Semiconductor MGSF1N02LT1G

Name: MGSF1N02LT1G
Brand: ON Semiconductor
SKU: 2849812-MGSF1N02LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MGSF1N02LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2849812-MGSF1N02LT1G

Description:: MOSFET N-CH 20V 750MA SOT23

ECAD Model:

Datasheet:: MGSF1N02LT1G

Specifications

ON Semiconductor MGSF1N02LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MGSF1N02LT1G.

Lifecycle Status
ACTIVE (Last Updated: 6 hours ago)
Factory Lead Time
11 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
90MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Powers
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
750mA
Pin Count
3
Number of Elements
1
Power Dissipation-Max
400mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
400mW
Turn On Delay Time
2.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
125pF @ 5V
Current - Continuous Drain (Id) @ 25°C
750mA Ta
Rise Time
1ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
1 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
750mA
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.75A
Drain to Source Breakdown Voltage
20V
Nominal Vgs
1.7 V
Height
1.01mm
Length
3.04mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MGSF1N02LT1G Description
MGSF1N02LT1G is a type of N-channel power MOSFET developed by ON Semiconductor and optimized for minimal power loss and conservation energy. It is able to provide low RDS(on) and superior switching performance. MGSF1N02LT1G is specifically designed for use in space-sensitive power management circuitry.

MGSF1N02LT1G Features
low RDS(on)
Low gate charge
Improved dv/dt capability
Superior switching performance
Available in the SOT-23 package

MGSF1N02LT1G Applications
Computers
Printers
PCMCIA
Cards, cellular and cordless telephones

MGSF1N02LT1G More Descriptions

MGSF1N02LT1G N-channel MOSFET Transistor; 0.75 A; 20 V; 3-Pin SOT-23
MGSF1N02L: Small Signal MOSFET 20V 750mA 90 mOhm Single N-Channel SOT-23
N-Channel 20 V 90 mOhm 440 mW Surface Mount Power MOSFET - SOT-23
Single N-Channel Power MOSFET 20V 750mA 90 mΩ
Trans MOSFET N-CH 20V 0.75A 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Product Comparison

The three parts on the right have similar specifications to MGSF1N02LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Gate Charge (Qg) (Max) @ Vgs

Pulsed Drain Current-Max (IDM)

Mount

Max Operating Temperature

Min Operating Temperature

HTS Code

Max Power Dissipation

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

View Compare
MGSF1N02LT1G

ON Semiconductor

ACTIVE (Last Updated: 6 hours ago)

11 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

90MOhm

Tin (Sn)

FET General Purpose Powers

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

750mA

3

1

400mW Ta

Single

ENHANCEMENT MODE

400mW

2.5 ns

N-Channel

SWITCHING

90m Ω @ 1.2A, 10V

2.4V @ 250μA

125pF @ 5V

750mA Ta

1ns

4.5V 10V

±20V

1 ns

16 ns

750mA

1.7V

20V

0.75A

20V

1.7 V

1.01mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
MGSF2N02ELT1G

ON Semiconductor

ACTIVE (Last Updated: 8 hours ago)

10 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

85MOhm

Tin (Sn)

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

2.8A

3

1

1.25W Ta

Single

ENHANCEMENT MODE

1.25W

6 ns

N-Channel

SWITCHING

85m Ω @ 3.6A, 4.5V

1V @ 250μA

150pF @ 5V

2.8A Ta

95ns

2.5V 4.5V

±8V

95 ns

28 ns

2.8A

1V

8V

-

20V

500 mV

1.01mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

260

40

3.5nC @ 4V

5A

-

-

-

-

-

-

-

-

MGSF1N02LT1G vs MGSF2N02ELT1G
MGSF1N03LT1

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-

Cut Tape (CT)

2005

e0

no

Obsolete

1 (Unlimited)

3

EAR99

-

Tin/Lead (Sn/Pb)

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

750mA

3

1

-

Single

ENHANCEMENT MODE

730mW

-

N-Channel

SWITCHING

100m Ω @ 1.2A, 10V

2.4V @ 250μA

140pF @ 5V

1.6A Ta

1ns

-

-

1 ns

16 ns

1.6A

-

20V

-

30V

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

240

30

-

-

Surface Mount

150°C

-55°C

8541.21.00.95

420mW

not_compliant

Not Qualified

0.1Ohm

MGSF1N02LT1G vs MGSF1N03LT1
MGSF1N03LT1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

24 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

yes

Active

1 (Unlimited)

3

EAR99

80MOhm

Tin (Sn)

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

750mA

3

1

420mW Ta

Single

ENHANCEMENT MODE

730mW

2.5 ns

N-Channel

SWITCHING

100m Ω @ 1.2A, 10V

2.4V @ 250μA

140pF @ 5V

1.6A Ta

1ns

4.5V 10V

±20V

1 ns

16 ns

2.1A

1.7V

20V

-

30V

1.7 V

1.016mm

3.0226mm

1.397mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

MGSF1N02LT1G vs MGSF1N03LT1G