Fairchild/ON Semiconductor KSA1010RTU

Name: KSA1010RTU
Brand: Fairchild/ON Semiconductor
SKU: 2468498-KSA1010RTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: KSA1010RTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2468498-KSA1010RTU

Description:: TRANS PNP 100V 7A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor KSA1010RTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1010RTU.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA1010
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A

Description

KSA1010RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 3A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 500mA, 5A.TO-220-3 is the supplier device package for this product.This device displays a 100V maximum voltage - Collector Emitter Breakdown.

KSA1010RTU Features
the DC current gain for this device is 40 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A
the supplier device package of TO-220-3

KSA1010RTU Applications
There are a lot of ON Semiconductor
KSA1010RTU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to KSA1010RTU.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Turn Off Time-Max (toff)

Radiation Hardening

RoHS Status

Lead Free

View Compare
KSA1010RTU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

TO-220-3

150°C TJ

Tube

Obsolete

1 (Unlimited)

KSA1010

1.5W

PNP

40 @ 3A 5V

10μA ICBO

600mV @ 500mA, 5A

100V

7A

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-

-

-

-

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KSA1174PBU

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 Short Body

-

150°C TJ

Bulk

Obsolete

1 (Unlimited)

KSA1174

300mW

PNP

200 @ 1mA 6V

1μA

300mV @ 1mA, 10mA

120V

50mA

100MHz

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KSA1010RTU vs KSA1174PBU
KSA1156YS

Fairchild/ON Semiconductor

Through Hole

TO-225AA, TO-126-3

-

150°C TJ

Bulk

Active

1 (Unlimited)

KSA1156

-

PNP

100 @ 100mA 5V

100μA ICBO

1V @ 10mA, 100mA

-

-

-

ACTIVE (Last Updated: 20 hours ago)

6 Weeks

Through Hole

3

761mg

SILICON

e3

yes

3

EAR99

Tin (Sn)

Other Transistors

-400V

1W

-500mA

1

Single

1W

SWITCHING

PNP

400V

500mA

400V

-1V

-400V

-7V

30

5000ns

No

ROHS3 Compliant

Lead Free

KSA1010RTU vs KSA1156YS
KSA1174FBU

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 Short Body

-

150°C TJ

Bulk

Obsolete

1 (Unlimited)

KSA1174

300mW

PNP

300 @ 1mA 6V

1μA

300mV @ 1mA, 10mA

120V

50mA

100MHz

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KSA1010RTU vs KSA1174FBU