Fairchild/ON Semiconductor KSA1242YTU
- Part Number:
- KSA1242YTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813464-KSA1242YTU
- Description:
- TRANS PNP 20V 5A I-PAK
- Datasheet:
- KSA1242
Fairchild/ON Semiconductor KSA1242YTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1242YTU.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max10W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA 2V
- Current - Collector Cutoff (Max)100μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 4A
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)5A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- RoHS StatusROHS3 Compliant
KSA1242YTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 2V.When VCE saturation is 1V @ 100mA, 4A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
KSA1242YTU Features
the DC current gain for this device is 160 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
a transition frequency of 180MHz
KSA1242YTU Applications
There are a lot of Rochester Electronics, LLC
KSA1242YTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 2V.When VCE saturation is 1V @ 100mA, 4A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
KSA1242YTU Features
the DC current gain for this device is 160 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
a transition frequency of 180MHz
KSA1242YTU Applications
There are a lot of Rochester Electronics, LLC
KSA1242YTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1242YTU More Descriptions
Tube Through Hole PNP Bipolar (BJT) Transistor 160 @ 500mA 2V 5A 10W 180MHz
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
IC EEPROM 4K I2C 400KHZ 8TSSOP
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
IC EEPROM 4K I2C 400KHZ 8TSSOP
The three parts on the right have similar specifications to KSA1242YTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTurn Off Time-Max (toff)View Compare
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KSA1242YTUThrough HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSIP-T3COMMERCIAL1SINGLE10WAMPLIFIERPNPPNP160 @ 500mA 2V100μA ICBO1V @ 100mA, 4A20V5A180MHz180MHzROHS3 Compliant--------------------------------
-
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)-SILICON150°C TJTape & Box (TB)e3yesActive1 (Unlimited)3Tin (Sn)BOTTOM------1--AMPLIFIERPNPPNP160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA--50MHz-ROHS3 CompliantACTIVE (Last Updated: 17 hours ago)6 WeeksThrough Hole3371.1027mg2013EAR99Other Transistors-160V900mW-1A50MHzKSA1013Single900mW50MHz160V1A160V-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoLead Free-
-
Through HoleTO-225AA, TO-126-3-SILICON150°C TJBulke3yesActive1 (Unlimited)3Tin (Sn)-------1--SWITCHINGPNPPNP100 @ 100mA 5V100μA ICBO1V @ 10mA, 100mA----ROHS3 CompliantACTIVE (Last Updated: 20 hours ago)6 WeeksThrough Hole3761mg-EAR99Other Transistors-400V1W-500mA-KSA1156Single1W-400V500mA400V-1V--400V-7V30----NoLead Free5000ns
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Through HoleTO-226-3, TO-92-3 Short Body--150°C TJBulk--Obsolete1 (Unlimited)-----------300mW--PNP300 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50mA-100MHz-------------KSA1174------------------
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