Fairchild/ON Semiconductor KSA1156YS
- Part Number:
- KSA1156YS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585125-KSA1156YS
- Description:
- TRANS PNP 400V 0.5A TO-126
- Datasheet:
- KSA1156YS
Fairchild/ON Semiconductor KSA1156YS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1156YS.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-400V
- Max Power Dissipation1W
- Current Rating-500mA
- Base Part NumberKSA1156
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 5V
- Current - Collector Cutoff (Max)100μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 10mA, 100mA
- Collector Emitter Breakdown Voltage400V
- Collector Emitter Saturation Voltage-1V
- Collector Base Voltage (VCBO)-400V
- Emitter Base Voltage (VEBO)-7V
- hFE Min30
- Turn Off Time-Max (toff)5000ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1156YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
KSA1156YS Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YS Applications
There are a lot of ON Semiconductor
KSA1156YS applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
KSA1156YS Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YS Applications
There are a lot of ON Semiconductor
KSA1156YS applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1156YS More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
Trans GP BJT PNP 400V 0.5A 1000mW 3-Pin(3 Tab) TO-126 Bag / TRANS PNP 400V 0.5A TO-126
400V 1W 500mA PNP TO-126-3 Bipolar Transistors - BJT ROHS
Transistor, PNP, -400V, -0.5A, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-400V; Transition Frequency ft:-; Power
Trans, Pnp, 400V, 0.5A, 150Deg C, 10W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:400V; Continuous Collector Current:500Ma; Power Dissipation:10W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi KSA1156YS
TRANSISTOR, PNP, -400V, -0.5A, TO-126-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -400V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: -500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Trans GP BJT PNP 400V 0.5A 1000mW 3-Pin(3 Tab) TO-126 Bag / TRANS PNP 400V 0.5A TO-126
400V 1W 500mA PNP TO-126-3 Bipolar Transistors - BJT ROHS
Transistor, PNP, -400V, -0.5A, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-400V; Transition Frequency ft:-; Power
Trans, Pnp, 400V, 0.5A, 150Deg C, 10W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:400V; Continuous Collector Current:500Ma; Power Dissipation:10W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi KSA1156YS
TRANSISTOR, PNP, -400V, -0.5A, TO-126-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -400V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: -500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to KSA1156YS.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Radiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPublishedTerminal PositionFrequencyGain Bandwidth ProductTransition FrequencyMax Breakdown VoltageHeightLengthWidthREACH SVHCView Compare
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KSA1156YSACTIVE (Last Updated: 20 hours ago)6 WeeksThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJBulke3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-400V1W-500mAKSA11561Single1WSWITCHINGPNPPNP400V500mA100 @ 100mA 5V100μA ICBO1V @ 10mA, 100mA400V-1V-400V-7V305000nsNoROHS3 CompliantLead Free---------------
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk--Obsolete1 (Unlimited)-------KSA1174-----PNP--200 @ 1mA 6V1μA300mV @ 1mA, 10mA---------300mW120V50mA100MHz----------
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ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mW-1AKSA10131Single900mWAMPLIFIERPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V-1.5V-160V-6V60-NoROHS3 CompliantLead Free----2013BOTTOM50MHz50MHz50MHz160V8.2mm5.1mm4.1mmNo SVHC
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk--Obsolete1 (Unlimited)-------KSA1174-----PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA---------300mW120V50mA100MHz----------
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