Fairchild/ON Semiconductor KSA1175GTA

Name: KSA1175GTA
Brand: Fairchild/ON Semiconductor
SKU: 3553909-KSA1175GTA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: KSA1175GTA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3553909-KSA1175GTA

Description:: TRANS PNP 50V 0.15A TO-92S

ECAD Model:

Datasheet:: KSA1175

Specifications

Fairchild/ON Semiconductor KSA1175GTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1175GTA.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA1175
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
180MHz

Description

KSA1175GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

KSA1175GTA Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA

KSA1175GTA Applications
There are a lot of ON Semiconductor
KSA1175GTA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to KSA1175GTA.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

Transition Frequency

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
KSA1175GTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 Short Body

150°C TJ

Tape & Box (TB)

Obsolete

1 (Unlimited)

KSA1175

250mW

PNP

200 @ 1mA 6V

100nA ICBO

300mV @ 10mA, 100mA

50V

150mA

180MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
KSA1242YTU

Fairchild/ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

150°C TJ

Tube

Obsolete

1 (Unlimited)

-

10W

PNP

160 @ 500mA 2V

100μA ICBO

1V @ 100mA, 4A

20V

5A

180MHz

NO

SILICON

e3

yes

3

MATTE TIN

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSIP-T3

COMMERCIAL

1

SINGLE

AMPLIFIER

PNP

180MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

KSA1175GTA vs KSA1242YTU
KSA1174PBU

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 Short Body

150°C TJ

Bulk

Obsolete

1 (Unlimited)

KSA1174

300mW

PNP

200 @ 1mA 6V

1μA

300mV @ 1mA, 10mA

120V

50mA

100MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

KSA1175GTA vs KSA1174PBU
KSA1013YTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

150°C TJ

Tape & Box (TB)

Active

1 (Unlimited)

KSA1013

-

PNP

160 @ 200mA 5V

1μA ICBO

1.5V @ 50mA, 500mA

-

-

-

-

SILICON

e3

yes

3

Tin (Sn)

BOTTOM

-

-

-

-

-

-

1

-

AMPLIFIER

PNP

50MHz

ROHS3 Compliant

ACTIVE (Last Updated: 17 hours ago)

6 Weeks

Through Hole

3

371.1027mg

2013

EAR99

Other Transistors

-160V

900mW

-1A

50MHz

Single

900mW

50MHz

160V

1A

160V

-1.5V

160V

-160V

-6V

60

8.2mm

5.1mm

4.1mm

No SVHC

No

Lead Free

KSA1175GTA vs KSA1013YTA