Fairchild/ON Semiconductor KSA1175GTA
- Part Number:
- KSA1175GTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3553909-KSA1175GTA
- Description:
- TRANS PNP 50V 0.15A TO-92S
- Datasheet:
- KSA1175
Fairchild/ON Semiconductor KSA1175GTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1175GTA.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Short Body
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberKSA1175
- Power - Max250mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)150mA
- Frequency - Transition180MHz
KSA1175GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
KSA1175GTA Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA1175GTA Applications
There are a lot of ON Semiconductor
KSA1175GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
KSA1175GTA Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA1175GTA Applications
There are a lot of ON Semiconductor
KSA1175GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to KSA1175GTA.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyRoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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KSA1175GTAThrough HoleTO-226-3, TO-92-3 Short Body150°C TJTape & Box (TB)Obsolete1 (Unlimited)KSA1175250mWPNP200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA180MHz-------------------------------------------------
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AA150°C TJTubeObsolete1 (Unlimited)-10WPNP160 @ 500mA 2V100μA ICBO1V @ 100mA, 4A20V5A180MHzNOSILICONe3yes3MATTE TINSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSIP-T3COMMERCIAL1SINGLEAMPLIFIERPNP180MHzROHS3 Compliant-----------------------------
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Through HoleTO-226-3, TO-92-3 Short Body150°C TJBulkObsolete1 (Unlimited)KSA1174300mWPNP200 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50mA100MHz------------------------------------------------
-
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)150°C TJTape & Box (TB)Active1 (Unlimited)KSA1013-PNP160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA----SILICONe3yes3Tin (Sn)BOTTOM------1-AMPLIFIERPNP50MHzROHS3 CompliantACTIVE (Last Updated: 17 hours ago)6 WeeksThrough Hole3371.1027mg2013EAR99Other Transistors-160V900mW-1A50MHzSingle900mW50MHz160V1A160V-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoLead Free
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