KSA1175LTA

Fairchild/ON Semiconductor KSA1175LTA

Part Number:
KSA1175LTA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813576-KSA1175LTA
Description:
TRANS PNP 50V 0.15A TO-92S
ECAD Model:
Datasheet:
KSA1175

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Specifications
Fairchild/ON Semiconductor KSA1175LTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1175LTA.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 Short Body
  • Supplier Device Package
    TO-92S
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Base Part Number
    KSA1175
  • Power - Max
    250mW
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    350 @ 1mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Current - Collector (Ic) (Max)
    150mA
  • Frequency - Transition
    180MHz
Description
KSA1175LTA Overview
This device has a DC current gain of 350 @ 1mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92S.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.

KSA1175LTA Features
the DC current gain for this device is 350 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92S


KSA1175LTA Applications
There are a lot of ON Semiconductor
KSA1175LTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
Product Comparison
The three parts on the right have similar specifications to KSA1175LTA.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Base Part Number
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn Off Time-Max (toff)
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • KSA1175LTA
    KSA1175LTA
    Through Hole
    TO-226-3, TO-92-3 Short Body
    TO-92S
    150°C TJ
    Tape & Box (TB)
    Obsolete
    1 (Unlimited)
    KSA1175
    250mW
    PNP
    350 @ 1mA 6V
    100nA ICBO
    300mV @ 10mA, 100mA
    50V
    150mA
    180MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • KSA1174PBU
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    KSA1174
    300mW
    PNP
    200 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    120V
    50mA
    100MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
  • KSA1156YS
    Through Hole
    TO-225AA, TO-126-3
    -
    150°C TJ
    Bulk
    Active
    1 (Unlimited)
    KSA1156
    -
    PNP
    100 @ 100mA 5V
    100μA ICBO
    1V @ 10mA, 100mA
    -
    -
    -
    ACTIVE (Last Updated: 20 hours ago)
    6 Weeks
    Through Hole
    3
    761mg
    SILICON
    e3
    yes
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -400V
    1W
    -500mA
    1
    Single
    1W
    SWITCHING
    PNP
    400V
    500mA
    400V
    -1V
    -400V
    -7V
    30
    5000ns
    No
    ROHS3 Compliant
    Lead Free
  • KSA1174FBU
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    KSA1174
    300mW
    PNP
    300 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    120V
    50mA
    100MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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