KSA1013YTA

Fairchild/ON Semiconductor KSA1013YTA

Part Number:
KSA1013YTA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585264-KSA1013YTA
Description:
TRANS PNP 160V 1A TO-92L
ECAD Model:
Datasheet:
KSA1013YTA

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Specifications
Fairchild/ON Semiconductor KSA1013YTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013YTA.
  • Lifecycle Status
    ACTIVE (Last Updated: 17 hours ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Number of Pins
    3
  • Weight
    371.1027mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -160V
  • Max Power Dissipation
    900mW
  • Terminal Position
    BOTTOM
  • Current Rating
    -1A
  • Frequency
    50MHz
  • Base Part Number
    KSA1013
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    900mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    160V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 200mA 5V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    160V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -1.5V
  • Max Breakdown Voltage
    160V
  • Collector Base Voltage (VCBO)
    -160V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    60
  • Height
    8.2mm
  • Length
    5.1mm
  • Width
    4.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
KSA1013YTA Overview
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.

KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz


KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
KSA1013YTA More Descriptions
Bipolar (BJT) Single Transistor, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo - Ammo Pack
1Ã×A 160V 900mW 1A 60@200mA5V 50MHz 1.5V@500mA50mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:50MHz; Power Dissipation Pd:900mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:TO-226AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to KSA1013YTA.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Turn Off Time-Max (toff)
    View Compare
  • KSA1013YTA
    KSA1013YTA
    ACTIVE (Last Updated: 17 hours ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    3
    371.1027mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -160V
    900mW
    BOTTOM
    -1A
    50MHz
    KSA1013
    1
    Single
    900mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    160V
    1A
    160 @ 200mA 5V
    1μA ICBO
    1.5V @ 50mA, 500mA
    160V
    50MHz
    -1.5V
    160V
    -160V
    -6V
    60
    8.2mm
    5.1mm
    4.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • KSA1174PBU
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    KSA1174
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    200 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300mW
    120V
    50mA
    100MHz
    -
  • KSA1156YS
    ACTIVE (Last Updated: 20 hours ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    761mg
    SILICON
    150°C TJ
    Bulk
    -
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -400V
    1W
    -
    -500mA
    -
    KSA1156
    1
    Single
    1W
    SWITCHING
    -
    PNP
    PNP
    400V
    500mA
    100 @ 100mA 5V
    100μA ICBO
    1V @ 10mA, 100mA
    400V
    -
    -1V
    -
    -400V
    -7V
    30
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    5000ns
  • KSA1174FBU
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    KSA1174
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    300 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300mW
    120V
    50mA
    100MHz
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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