Fairchild/ON Semiconductor KSA1013YTA
- Part Number:
- KSA1013YTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585264-KSA1013YTA
- Description:
- TRANS PNP 160V 1A TO-92L
- Datasheet:
- KSA1013YTA
Fairchild/ON Semiconductor KSA1013YTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013YTA.
- Lifecycle StatusACTIVE (Last Updated: 17 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Number of Pins3
- Weight371.1027mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-160V
- Max Power Dissipation900mW
- Terminal PositionBOTTOM
- Current Rating-1A
- Frequency50MHz
- Base Part NumberKSA1013
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation900mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 200mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-1.5V
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-6V
- hFE Min60
- Height8.2mm
- Length5.1mm
- Width4.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1013YTA Overview
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1013YTA More Descriptions
Bipolar (BJT) Single Transistor, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo - Ammo Pack
1Ã×A 160V 900mW 1A 60@200mA5V 50MHz 1.5V@500mA50mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:50MHz; Power Dissipation Pd:900mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:TO-226AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo - Ammo Pack
1Ã×A 160V 900mW 1A 60@200mA5V 50MHz 1.5V@500mA50mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:50MHz; Power Dissipation Pd:900mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:TO-226AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to KSA1013YTA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTurn Off Time-Max (toff)View Compare
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KSA1013YTAACTIVE (Last Updated: 17 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoROHS3 CompliantLead Free------
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)---------KSA1174------PNP--200 @ 1mA 6V1μA300mV @ 1mA, 10mA--------------300mW120V50mA100MHz-
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ACTIVE (Last Updated: 20 hours ago)6 WeeksThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJBulk-e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-400V1W--500mA-KSA11561Single1WSWITCHING-PNPPNP400V500mA100 @ 100mA 5V100μA ICBO1V @ 10mA, 100mA400V--1V--400V-7V30----NoROHS3 CompliantLead Free----5000ns
-
---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)---------KSA1174------PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA--------------300mW120V50mA100MHz-
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