IXYS IXGA30N120B3

Name: IXGA30N120B3
Brand: IXYS
SKU: 2494646-IXGA30N120B3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGA30N120B3

Manufacturer:: IXYS

Ventron No:: 2494646-IXGA30N120B3

Description:: IGBT 1200V 60A 300W TO263

ECAD Model:

Datasheet:: IXGA30N120B3

Specifications

IXYS IXGA30N120B3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGA30N120B3.

Factory Lead Time
30 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
PURE TIN
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
300W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*30N120
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
60A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.96V
Turn On Time
56 ns
Test Condition
960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 30A
Turn Off Time-Nom (toff)
471 ns
IGBT Type
PT
Gate Charge
87nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
16ns/127ns
Switching Energy
3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

The IXYS Semiconductor IXGA30N120B3 IGBT Single Transistor is a high-performance, low-cost, and reliable transistor designed for use in a variety of applications. This transistor is capable of delivering up to 60A of current at 3.5V and 300W of power. It has a breakdown voltage of 1.2kV and comes in a TO-263 package with three pins.

Features of the IXYS Semiconductor IXGA30N120B3 IGBT Single Transistor include:

• High-performance and reliable transistor
• Low-cost
• Capable of delivering up to 60A of current at 3.5V and 300W of power
• Breakdown voltage of 1.2kV
• Comes in a TO-263 package with three pins

Applications of the IXYS Semiconductor IXGA30N120B3 IGBT Single Transistor include:

• Motor control
• Power conversion
• Automotive
• Industrial
• Lighting
• Renewable energy

IXGA30N120B3 More Descriptions

Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2 Tab) TO-263AA
IGBT,1200V,30A,TO-263; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 3.5V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-263; No. of Pins: 3Pins; Op
Xpt Igbt Copack, 1200V, 60A, To-263; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.96V; Power Dissipation:300W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Ixys Semiconductor IXGA30N120B3

Product Comparison

The three parts on the right have similar specifications to IXGA30N120B3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

REACH SVHC

RoHS Status

Weight

Power - Max

Lead Free

Terminal Position

Configuration

View Compare
IXGA30N120B3

IXYS

30 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2008

e3

yes

Active

1 (Unlimited)

2

EAR99

PURE TIN

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

300W

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*30N120

4

R-PSSO-G2

Not Qualified

1

Single

300W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.2kV

60A

1.2kV

1200V

2.96V

56 ns

960V, 30A, 5 Ω, 15V

3.5V @ 15V, 30A

471 ns

PT

87nC

150A

16ns/127ns

3.47mJ (on), 2.16mJ (off)

20V

5V

No SVHC

ROHS3 Compliant

-

-

-

-

-

-
IXGA20N120A3

IXYS

30 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e3

yes

Active

1 (Unlimited)

2

EAR99

PURE TIN

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

180W

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*20N120

4

R-PSSO-G2

Not Qualified

1

Single

-

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

2.5V

40A

1.2kV

1200V

2.5V

66 ns

960V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

1530 ns

PT

50nC

120A

16ns/290ns

2.85mJ (on), 6.47mJ (off)

20V

5V

No SVHC

ROHS3 Compliant

1.59999g

180W

Lead Free

-

-

IXGA30N120B3 vs IXGA20N120A3
IXGA30N60C3C1

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e3

yes

Active

1 (Unlimited)

2

EAR99

PURE TIN

-

Insulated Gate BIP Transistors

220W

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*30N60

4

R-PSSO-G2

Not Qualified

1

-

220W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

3V

60A

600V

-

2.6V

37 ns

300V, 20A, 5 Ω, 15V

3V @ 15V, 20A

160 ns

PT

38nC

150A

17ns/42ns

120μJ (on), 90μJ (off)

20V

5.5V

No SVHC

ROHS3 Compliant

1.59999g

-

-

SINGLE

SINGLE WITH BUILT-IN DIODE

IXGA30N120B3 vs IXGA30N60C3C1
IXGA15N120B

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

HiPerFAST™

2000

e3

yes

Active

1 (Unlimited)

2

-

Matte Tin (Sn)

-

Insulated Gate BIP Transistors

150W

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

IXG*15N120

3

R-PSSO-G2

Not Qualified

1

Single

-

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.2kV

30A

1.2kV

1200V

3.2V

43 ns

960V, 15A, 10 Ω, 15V

3.2V @ 15V, 15A

660 ns

PT

69nC

60A

25ns/180ns

1.75mJ (off)

20V

5V

-

ROHS3 Compliant

1.59999g

150W

-

-

-

IXGA30N120B3 vs IXGA15N120B