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IXGA8N100

IXYS IXGA8N100

Part Number:
IXGA8N100
Manufacturer:
IXYS
Ventron No:
3072190-IXGA8N100
Description:
IGBT 1000V 16A 54W TO263
ECAD Model:
Datasheet:
IXGA8N100

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Specifications
IXYS IXGA8N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGA8N100.
  • Factory Lead Time
    25 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.59999g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW SATURATION VOLTAGE
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    54W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    15 ns
  • Power - Max
    54W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    600 ns
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    16A
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Collector Emitter Saturation Voltage
    2.7V
  • Turn On Time
    15 ns
  • Test Condition
    800V, 8A, 120 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 8A
  • Turn Off Time-Nom (toff)
    900 ns
  • IGBT Type
    PT
  • Gate Charge
    26.5nC
  • Current - Collector Pulsed (Icm)
    32A
  • Td (on/off) @ 25°C
    15ns/600ns
  • Switching Energy
    2.3mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGA8N100 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGA8N100 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGA8N100. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGA8N100 More Descriptions
IGBT 1000V 16A 54W TO263
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGA8N100.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Series
    Terminal Position
    Base Part Number
    Configuration
    Power Dissipation
    REACH SVHC
    Fall Time-Max (tf)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Current - Collector (Ic) (Max)
    View Compare
  • IXGA8N100
    IXGA8N100
    IXYS
    25 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.59999g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    LOW SATURATION VOLTAGE
    Insulated Gate BIP Transistors
    54W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    15 ns
    54W
    POWER CONTROL
    N-CHANNEL
    600 ns
    1kV
    16A
    1kV
    1000V
    2.7V
    15 ns
    800V, 8A, 120 Ω, 15V
    2.7V @ 15V, 8A
    900 ns
    PT
    26.5nC
    32A
    15ns/600ns
    2.3mJ (off)
    20V
    5.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGA30N60C3C1
    IXGA30N60C3C1
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.59999g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    PURE TIN
    -
    Insulated Gate BIP Transistors
    220W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    3V
    60A
    600V
    -
    2.6V
    37 ns
    300V, 20A, 5 Ω, 15V
    3V @ 15V, 20A
    160 ns
    PT
    38nC
    150A
    17ns/42ns
    120μJ (on), 90μJ (off)
    20V
    5.5V
    ROHS3 Compliant
    -
    GenX3™
    SINGLE
    IXG*30N60
    SINGLE WITH BUILT-IN DIODE
    220W
    No SVHC
    -
    -
    -
    -
    -
    IXGA8N100 vs IXGA30N60C3C1
  • IXGA20N120
    IXGA20N120
    IXYS
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.59999g
    SILICON
    -55°C~150°C TJ
    Tube
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    -
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    150W
    MOTOR CONTROL
    N-CHANNEL
    -
    1.2kV
    40A
    1.2kV
    1200V
    3V
    57 ns
    800V, 20A, 47 Ω, 15V
    2.5V @ 15V, 20A
    1250 ns
    PT
    63nC
    80A
    28ns/400ns
    6.5mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    IXG*20N120
    -
    -
    -
    700ns
    -
    -
    -
    -
    IXGA8N100 vs IXGA20N120
  • IXGA4N100
    IXGA4N100
    IXYS
    25 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.59999g
    -
    -55°C~150°C TJ
    Tube
    2000
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    40W
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    -
    Standard
    -
    40W
    -
    -
    -
    1kV
    8A
    1kV
    1000V
    -
    -
    800V, 4A, 120Ohm, 15V
    2.7V @ 15V, 4A
    -
    -
    13.6nC
    16A
    20ns/390ns
    900μJ (off)
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    TO-263 (IXGA)
    150°C
    -55°C
    8A
    IXGA8N100 vs IXGA4N100
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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