Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGA42N30C3
IXGA42N30C3

IXYS IXGA42N30C3

Part Number:
IXGA42N30C3
Manufacturer:
IXYS
Ventron No:
3554866-IXGA42N30C3
Description:
IGBT 300V 223W TO263AA
ECAD Model:
Datasheet:
IXGA42N30C3

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
IXYS IXGA42N30C3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGA42N30C3.
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    223W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.85V
  • Max Collector Current
    42A
  • Collector Emitter Breakdown Voltage
    300V
  • Turn On Time
    43 ns
  • Test Condition
    200V, 21A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 42A
  • Turn Off Time-Nom (toff)
    229 ns
  • IGBT Type
    PT
  • Gate Charge
    76nC
  • Current - Collector Pulsed (Icm)
    250A
  • Td (on/off) @ 25°C
    21ns/113ns
  • Switching Energy
    120μJ (on), 150μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    120ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGA42N30C3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGA42N30C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGA42N30C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGA42N30C3 More Descriptions
IGBT 300V 223W TO263AA
IGBT 42A 300V TO-263AA
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGA42N30C3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Number of Pins
    Weight
    Base Part Number
    Element Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Reverse Recovery Time
    View Compare
  • IXGA42N30C3
    IXGA42N30C3
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    223W
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.85V
    42A
    300V
    43 ns
    200V, 21A, 10 Ω, 15V
    1.85V @ 15V, 42A
    229 ns
    PT
    76nC
    250A
    21ns/113ns
    120μJ (on), 150μJ (off)
    20V
    5V
    120ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGA20N120
    IXGA20N120
    IXYS
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    150W
    -
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    MOTOR CONTROL
    N-CHANNEL
    1.2kV
    40A
    1.2kV
    57 ns
    800V, 20A, 47 Ω, 15V
    2.5V @ 15V, 20A
    1250 ns
    PT
    63nC
    80A
    28ns/400ns
    6.5mJ (off)
    20V
    5V
    700ns
    ROHS3 Compliant
    3
    1.59999g
    IXG*20N120
    Single
    150W
    1200V
    3V
    -
    IXGA42N30C3 vs IXGA20N120
  • IXGA30N60C3D4
    IXGA30N60C3D4
    IXYS
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2011
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    220W
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    3V
    60A
    600V
    45 ns
    300V, 20A, 5 Ω, 15V
    3V @ 15V, 20A
    160 ns
    PT
    38nC
    150A
    16ns/42ns
    270μJ (on), 90μJ (off)
    20V
    5.5V
    -
    ROHS3 Compliant
    -
    -
    -
    -
    220W
    -
    -
    60 ns
    IXGA42N30C3 vs IXGA30N60C3D4
  • IXGA12N60BD1
    IXGA12N60BD1
    IXYS
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2002
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    -
    100W
    SINGLE
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    MOTOR CONTROL
    N-CHANNEL
    2.1V
    24A
    600V
    40 ns
    -
    2.1V @ 15V, 12A
    400 ns
    -
    32nC
    -
    20ns/150ns
    500μJ (off)
    -
    -
    -
    RoHS Compliant
    3
    1.59999g
    IXG*12N60
    -
    100W
    -
    -
    -
    IXGA42N30C3 vs IXGA12N60BD1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IXGA42N30C3
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.