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IRLU3915PBF

Infineon Technologies IRLU3915PBF

Part Number:
IRLU3915PBF
Manufacturer:
Infineon Technologies
Ventron No:
2487600-IRLU3915PBF
Description:
MOSFET N-CH 55V 30A I-PAK
ECAD Model:
Datasheet:
IRLU3915PBF

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  • IRLU3915PBF Detail Images
  • IRLU3915PBF Detail Images
  • IRLU3915PBF Detail Images
  • IRLU3915PBF Detail Images
Specifications
Infineon Technologies IRLU3915PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLU3915PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    14mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    30A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    120W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    120W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    92nC @ 10V
  • Rise Time
    51ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    100 ns
  • Turn-Off Delay Time
    83 ns
  • Continuous Drain Current (ID)
    61A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Dual Supply Voltage
    55V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Nominal Vgs
    3 V
  • Height
    6.22mm
  • Length
    6.7056mm
  • Width
    2.3876mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLU3915PBF Description
This HEXFET® Power MOSFET IRLU3915PBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make the IRLU3915PBF an extremely efficient and reliable device for various applications.

IRLU3915PBF Features
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-free

IRLU3915PBF Applications
Automotive  Body electronics & lighting  Communications equipment  Broadband fixed line access  Personal electronics  Connected peripherals & printers
IRLU3915PBF More Descriptions
IRLU3915PBF N-channel MOSFET Transistor, 61 A, 55 V, 3-Pin IPAK
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 61A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:61A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:14mohm; Package / Case:IPAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:240A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
IRLU3915PBF Detail Images
Product Comparison
The three parts on the right have similar specifications to IRLU3915PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRLU3915PBF
    IRLU3915PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2010
    e3
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    14mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    260
    30A
    30
    1
    120W Tc
    Single
    ENHANCEMENT MODE
    120W
    DRAIN
    7.4 ns
    N-Channel
    SWITCHING
    14m Ω @ 30A, 10V
    3V @ 250μA
    1870pF @ 25V
    30A Tc
    92nC @ 10V
    51ns
    5V 10V
    ±16V
    100 ns
    83 ns
    61A
    3V
    16V
    55V
    240A
    55V
    200 mJ
    3 V
    6.22mm
    6.7056mm
    2.3876mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLU8256PBF
    IRLU8256PBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    63W Tc
    -
    -
    63W
    -
    9.7 ns
    N-Channel
    -
    5.7mOhm @ 25A, 10V
    2.35V @ 25μA
    1470pF @ 13V
    81A Tc
    15nC @ 4.5V
    46ns
    4.5V 10V
    ±20V
    8.5 ns
    12 ns
    81A
    1.8V
    20V
    25V
    -
    25V
    -
    1.8 V
    6.22mm
    6.7056mm
    2.3876mm
    No SVHC
    No
    RoHS Compliant
    -
    I-PAK
    Through Hole
    175°C
    -55°C
    25V
    1.47nF
    29 ns
    8.5mOhm
    5.7 mΩ
    IRLU3915PBF vs IRLU8256PBF
  • IRLU7807ZPBF
    IRLU7807ZPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    30V
    MOSFET (Metal Oxide)
    -
    43A
    -
    -
    40W Tc
    -
    -
    40W
    -
    7.1 ns
    N-Channel
    -
    13.8mOhm @ 15A, 10V
    2.25V @ 250μA
    780pF @ 15V
    43A Tc
    11nC @ 4.5V
    28ns
    4.5V 10V
    ±20V
    3.5 ns
    9.8 ns
    43A
    1.8V
    20V
    30V
    -
    -
    -
    1.8 V
    6.1mm
    6.6mm
    2.3mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    I-PAK
    -
    175°C
    -55°C
    30V
    780pF
    35 ns
    18.2mOhm
    13.8 mΩ
    IRLU3915PBF vs IRLU7807ZPBF
  • IRLU8259PBF
    IRLU8259PBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    48W Tc
    -
    -
    48W
    -
    8.4 ns
    N-Channel
    -
    8.7mOhm @ 21A, 10V
    2.35V @ 25μA
    900pF @ 13V
    57A Tc
    10nC @ 4.5V
    38ns
    4.5V 10V
    ±20V
    8.9 ns
    9.1 ns
    57A
    -
    20V
    25V
    -
    25V
    -
    1.9 V
    6.22mm
    6.7056mm
    2.3876mm
    No SVHC
    No
    RoHS Compliant
    -
    I-PAK
    Through Hole
    175°C
    -55°C
    25V
    900pF
    26 ns
    12.9mOhm
    8.7 mΩ
    IRLU3915PBF vs IRLU8259PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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