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Infineon Technologies IRLL024NTRPBF
- Part Number:
- IRLL024NTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484107-IRLL024NTRPBF
- Description:
- MOSFET N-CH 55V 3.1A SOT223
- ECAD Model:
-
- Datasheet:
- IRLL024NTRPBF
Infineon Technologies IRLL024NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLL024NTRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierIRLL024NTRPBF
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1999
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance65mOhm
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating3.1A
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Case ConnectionDRAIN
- Turn On Delay Time7.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs65m Ω @ 3.1A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.1A Ta
- Gate Charge (Qg) (Max) @ Vgs15.6nC @ 5V
- Rise Time21ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)3.1A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time58 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Height1.8mm
- Length6.6802mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
Description
A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.
Features
● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● Fully Avalanche Rated ● Fast Switching ● Surface Mount ● Advanced Process Technology ● Lead-Free
Applications
● In various radio and RF applications ● Transportation technology ● Automotive industry ● Power MOSFETs ● Consumer electronics
A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.
Features
● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● Fully Avalanche Rated ● Fast Switching ● Surface Mount ● Advanced Process Technology ● Lead-Free
Applications
● In various radio and RF applications ● Transportation technology ● Automotive industry ● Power MOSFETs ● Consumer electronics
IRLL024NTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS /-16V
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 55V 3.1A SOT223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
IRLL024NTRPBF,MOSFET, 55V, 4.4 A, 65 MOHM, 10.4 NC QG, LOGIC
Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.4A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:223-SOT; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 25 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 55V 3.1A SOT223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
IRLL024NTRPBF,MOSFET, 55V, 4.4 A, 65 MOHM, 10.4 NC QG, LOGIC
Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.4A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:223-SOT; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.4 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 25 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
The three parts on the right have similar specifications to IRLL024NTRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Forward VoltageView Compare
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IRLL024NTRPBF12 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA3SILICONIRLL024NTRPBF-55°C~150°C TJTape & Reel (TR)HEXFET®1999Active1 (Unlimited)4EAR9965mOhmAVALANCHE RATED, ULTRA LOW RESISTANCE55VMOSFET (Metal Oxide)DUALGULL WING3.1AR-PDSO-G4111W TaSingleENHANCEMENT MODE2.1WDRAIN7.4 nsN-ChannelSWITCHING65m Ω @ 3.1A, 10V2V @ 250μA510pF @ 25V3.1A Ta15.6nC @ 5V21ns4V 10V±16V25 ns18 ns3.1A2V16V55V55V58 ns150°C2 V1.8mm6.6802mm3.7mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free--------------- -
---Surface MountTO-261-4, TO-261AA-SILICON--55°C~150°C TJTape & Reel (TR)HEXFET®1999Obsolete1 (Unlimited)4EAR99-HIGH RELIABILITY, AVALANCHE RATED-MOSFET (Metal Oxide)DUALGULL WING-R-PDSO-G41-1W Ta-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING45m Ω @ 3.9A, 10V2.4V @ 250μA530pF @ 25V3.9A Ta14nC @ 5V-4V 10V±16V---------------Non-RoHS Compliant-YESe3Matte Tin (Sn)26030Not QualifiedSINGLE WITH BUILT-IN DIODE30V3.9A0.045Ohm16A30V180 mJ-
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12 Weeks-Surface MountSurface MountTO-261-4, TO-261AA3SILICON--55°C~150°C TJTape & Reel (TR)HEXFET®2004Active1 (Unlimited)4EAR9960MOhmHIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WING-R-PDSO-G41-1W TaSingleENHANCEMENT MODE2.8WDRAIN8.6 nsN-ChannelSWITCHING60m Ω @ 3A, 10V3V @ 250μA380pF @ 25V5A Tc11nC @ 5V33ns4.5V 10V±16V15 ns20 ns5A-16V55V----1.4478mm6.6802mm3.7mm-NoROHS3 CompliantLead Free-e3Matte Tin (Sn)26030---5A-40A---
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14 Weeks-Surface MountSurface MountTO-261-4, TO-261AA3SILICON--55°C~150°C TJTape & Reel (TR)HEXFET®1999Not For New Designs1 (Unlimited)4EAR9960mOhmHIGH RELIABILITY, AVALANCHE RATED30VMOSFET (Metal Oxide)DUALGULL WING3.9AR-PDSO-G41-1W TaSingleENHANCEMENT MODE2.1WDRAIN7.4 nsN-ChannelSWITCHING45m Ω @ 3.9A, 10V2.4V @ 250μA530pF @ 25V3.9A Ta14nC @ 5V24ns4V 10V±16V14 ns6.9 ns3.9A-16V30V----1.4478mm6.6802mm3.7mm-NoROHS3 CompliantContains Lead-e3Matte Tin (Sn)26030-----16A-180 mJ1V
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