Vishay Siliconix IRLL014TR
- Part Number:
- IRLL014TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853397-IRLL014TR
- Description:
- MOSFET N-CH 60V 2.7A SOT223
- Datasheet:
- IRLL014TR
Vishay Siliconix IRLL014TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLL014TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight250.212891mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Current Rating2.7A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Voltage55V
- Power Dissipation-Max2W Ta 3.1W Tc
- Current2A
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time9.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 1.6A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A Tc
- Gate Charge (Qg) (Max) @ Vgs8.4nC @ 5V
- Rise Time110ns
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)26 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)2.7A
- Gate to Source Voltage (Vgs)10V
- Drain-source On Resistance-Max0.2Ohm
- Height1.8mm
- Length6.7mm
- Width3.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRLL014TR Overview
A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This device reduces its overall power consumption by using drive voltage (4V 5V).
IRLL014TR Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 17 ns
IRLL014TR Applications
There are a lot of Vishay Siliconix
IRLL014TR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This device reduces its overall power consumption by using drive voltage (4V 5V).
IRLL014TR Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 17 ns
IRLL014TR Applications
There are a lot of Vishay Siliconix
IRLL014TR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRLL014TR More Descriptions
Trans MOSFET N-CH 60V 2.7A 4-Pin (3 Tab) SOT-223 T/R
MOSFET N-CH 60V 2.7A SOT223
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/smd
MOSFET N-CH 60V 2.7A SOT223
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/smd
The three parts on the right have similar specifications to IRLL014TR.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationNumber of ChannelsVoltagePower Dissipation-MaxCurrentOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxHeightLengthWidthRoHS StatusLead FreeDrain to Source Voltage (Vdss)Surface MountSeriesDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeResistanceElement ConfigurationDrain to Source Breakdown VoltageRadiation HardeningView Compare
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IRLL014TRSurface MountSurface MountTO-261-4, TO-261AA4250.212891mgSILICON-55°C~150°C TJTape & Reel (TR)2012e0Obsolete1 (Unlimited)3EAR99TIN LEADLOGIC LEVEL COMPATIBLE60VMOSFET (Metal Oxide)DUALGULL WING2402.7A304R-PDSO-G3Not Qualified1SINGLE WITH BUILT-IN DIODE155V2W Ta 3.1W Tc2AENHANCEMENT MODE2WDRAIN9.3 nsN-ChannelSWITCHING200m Ω @ 1.6A, 5V2V @ 250μA400pF @ 25V2.7A Tc8.4nC @ 5V110ns4V 5V±10V26 ns17 ns2.7A10V0.2Ohm1.8mm6.7mm3.7mmNon-RoHS CompliantContains Lead-------------
-
Surface MountSurface MountTO-261-4, TO-261AA----Tape & Reel (TR)--Active1 (Unlimited)-----MOSFET (Metal Oxide)------------------N-Channel-----------------Non-RoHS Compliant-30V-----------
-
-Surface MountTO-261-4, TO-261AA--SILICON-55°C~150°C TJTape & Reel (TR)1999e3Obsolete1 (Unlimited)4EAR99Matte Tin (Sn)HIGH RELIABILITY, AVALANCHE RATED-MOSFET (Metal Oxide)DUALGULL WING260-30-R-PDSO-G4Not Qualified1SINGLE WITH BUILT-IN DIODE--1W Ta-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING45m Ω @ 3.9A, 10V2.4V @ 250μA530pF @ 25V3.9A Ta14nC @ 5V-4V 10V±16V----0.045Ohm---Non-RoHS Compliant-30VYESHEXFET®3.9A16A30V180 mJ-----
-
Surface MountSurface MountTO-261-4, TO-261AA3-SILICON-55°C~150°C TJTape & Reel (TR)2004e3Active1 (Unlimited)4EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WING260-30-R-PDSO-G4-1---1W Ta-ENHANCEMENT MODE2.8WDRAIN8.6 nsN-ChannelSWITCHING60m Ω @ 3A, 10V3V @ 250μA380pF @ 25V5A Tc11nC @ 5V33ns4.5V 10V±16V15 ns20 ns5A16V-1.4478mm6.6802mm3.7mmROHS3 CompliantLead Free--HEXFET®5A40A--12 Weeks60MOhmSingle55VNo
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