IRLL014TR

Vishay Siliconix IRLL014TR

Part Number:
IRLL014TR
Manufacturer:
Vishay Siliconix
Ventron No:
2853397-IRLL014TR
Description:
MOSFET N-CH 60V 2.7A SOT223
ECAD Model:
Datasheet:
IRLL014TR

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Specifications
Vishay Siliconix IRLL014TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLL014TR.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.212891mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Current Rating
    2.7A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    4
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Voltage
    55V
  • Power Dissipation-Max
    2W Ta 3.1W Tc
  • Current
    2A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    200m Ω @ 1.6A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.4nC @ 5V
  • Rise Time
    110ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    26 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    2.7A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain-source On Resistance-Max
    0.2Ohm
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRLL014TR Overview
A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This device reduces its overall power consumption by using drive voltage (4V 5V).

IRLL014TR Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 17 ns


IRLL014TR Applications
There are a lot of Vishay Siliconix
IRLL014TR applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRLL014TR More Descriptions
Trans MOSFET N-CH 60V 2.7A 4-Pin (3 Tab) SOT-223 T/R
MOSFET N-CH 60V 2.7A SOT223
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/smd
Product Comparison
The three parts on the right have similar specifications to IRLL014TR.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Number of Channels
    Voltage
    Power Dissipation-Max
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Surface Mount
    Series
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Resistance
    Element Configuration
    Drain to Source Breakdown Voltage
    Radiation Hardening
    View Compare
  • IRLL014TR
    IRLL014TR
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    250.212891mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN LEAD
    LOGIC LEVEL COMPATIBLE
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    2.7A
    30
    4
    R-PDSO-G3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1
    55V
    2W Ta 3.1W Tc
    2A
    ENHANCEMENT MODE
    2W
    DRAIN
    9.3 ns
    N-Channel
    SWITCHING
    200m Ω @ 1.6A, 5V
    2V @ 250μA
    400pF @ 25V
    2.7A Tc
    8.4nC @ 5V
    110ns
    4V 5V
    ±10V
    26 ns
    17 ns
    2.7A
    10V
    0.2Ohm
    1.8mm
    6.7mm
    3.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLL1503TR
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLL2703TR
    -
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1999
    e3
    Obsolete
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY, AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    -
    R-PDSO-G4
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    -
    1W Ta
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    45m Ω @ 3.9A, 10V
    2.4V @ 250μA
    530pF @ 25V
    3.9A Ta
    14nC @ 5V
    -
    4V 10V
    ±16V
    -
    -
    -
    -
    0.045Ohm
    -
    -
    -
    Non-RoHS Compliant
    -
    30V
    YES
    HEXFET®
    3.9A
    16A
    30V
    180 mJ
    -
    -
    -
    -
    -
  • IRLL024ZTRPBF
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    -
    R-PDSO-G4
    -
    1
    -
    -
    -
    1W Ta
    -
    ENHANCEMENT MODE
    2.8W
    DRAIN
    8.6 ns
    N-Channel
    SWITCHING
    60m Ω @ 3A, 10V
    3V @ 250μA
    380pF @ 25V
    5A Tc
    11nC @ 5V
    33ns
    4.5V 10V
    ±16V
    15 ns
    20 ns
    5A
    16V
    -
    1.4478mm
    6.6802mm
    3.7mm
    ROHS3 Compliant
    Lead Free
    -
    -
    HEXFET®
    5A
    40A
    -
    -
    12 Weeks
    60MOhm
    Single
    55V
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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