Infineon Technologies IRLL014NTR

Name: IRLL014NTR
Brand: Infineon Technologies
SKU: 3071610-IRLL014NTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLL014NTR

Manufacturer:: Infineon Technologies

Ventron No:: 3071610-IRLL014NTR

Description:: MOSFET N-CH 55V 2A SOT223

ECAD Model:

Datasheet:: IRLL014N

Specifications

Infineon Technologies IRLL014NTR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLL014NTR.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Drain Current-Max (Abs) (ID)
2A
Drain-source On Resistance-Max
0.14Ohm
Pulsed Drain Current-Max (IDM)
16A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
32 mJ
RoHS Status
Non-RoHS Compliant

Description

IRLL014NTR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 32 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 230pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.There is a peak drain current of 16A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).

IRLL014NTR Features
the avalanche energy rating (Eas) is 32 mJ
based on its rated peak drain current 16A.
a 55V drain to source voltage (Vdss)

IRLL014NTR Applications
There are a lot of Infineon Technologies
IRLL014NTR applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRLL014NTR More Descriptions

MOSFET, 55V, 2A, 140 mOhm, 9.5 nC Qg, Logic Level, SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/R
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Product Comparison

The three parts on the right have similar specifications to IRLL014NTR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Forward Voltage

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRLL014NTR

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Obsolete

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G4

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

140m Ω @ 2A, 10V

2V @ 250μA

230pF @ 25V

2A Ta

14nC @ 10V

55V

4V 10V

±16V

2A

0.14Ohm

16A

55V

32 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLL3303TRPBF

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Not For New Designs

1 (Unlimited)

4

EAR99

-

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

R-PDSO-G4

-

1

-

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

31m Ω @ 4.6A, 10V

1V @ 250μA

840pF @ 25V

4.6A Ta

50nC @ 10V

-

4.5V 10V

±16V

6.5A

-

-

-

-

ROHS3 Compliant

10 Weeks

Tin

Surface Mount

3

31mOhm

FET General Purpose Power

30V

4.6A

Single

2.1W

7.2 ns

22ns

28 ns

33 ns

4.6A

1V

16V

30V

30V

98 ns

1 V

1.8mm

6.6802mm

3.7mm

No SVHC

No

Contains Lead, Lead Free

-

-

-

-

-

-

-

IRLL014NTR vs IRLL3303TRPBF
IRLL2703TRPBF

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Not For New Designs

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

HIGH RELIABILITY, AVALANCHE RATED

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

R-PDSO-G4

-

1

-

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

45m Ω @ 3.9A, 10V

2.4V @ 250μA

530pF @ 25V

3.9A Ta

14nC @ 5V

-

4V 10V

±16V

-

-

16A

-

180 mJ

ROHS3 Compliant

14 Weeks

-

Surface Mount

3

60mOhm

-

30V

3.9A

Single

2.1W

7.4 ns

24ns

14 ns

6.9 ns

3.9A

-

16V

30V

-

-

-

1.4478mm

6.6802mm

3.7mm

-

No

Contains Lead

1V

-

-

-

-

-

-

IRLL014NTR vs IRLL2703TRPBF
IRLL2703PBF

Infineon Technologies

Surface Mount

TO-261-4, TO-261AA

-

-

-55°C~150°C TJ

Tube

HEXFET®

2004

-

Discontinued

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

1W Ta

-

-

N-Channel

-

45mOhm @ 3.9A, 10V

2.4V @ 250μA

530pF @ 25V

3.9A Ta

14nC @ 5V

30V

4V 10V

±16V

-

-

-

-

-

ROHS3 Compliant

-

-

Surface Mount

3

60mOhm

-

30V

3.9A

Single

2.1W

7.4 ns

24ns

14 ns

6.9 ns

3.9A

2.4V

16V

30V

30V

63 ns

2.4 V

1.7mm

6.7mm

3.7mm

No SVHC

No

Lead Free

-

SOT-223

150°C

-55°C

530pF

70mOhm

45 mΩ

IRLL014NTR vs IRLL2703PBF

Certification

Related parts for IRLL014NTR

IRLL2703

Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223
IRLL2705PBF

Infineon Technologies

MOSFET N-CH 55V 3.8A SOT223
IRLL014NTR

Infineon Technologies

MOSFET N-CH 55V 2A SOT223
IRLL1503TR

Vishay Siliconix

MOSFET N-CH 30V SOT223
IRLL014TR

Vishay Siliconix

MOSFET N-CH 60V 2.7A SOT223
IRLL2703TR

Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223
IRLL3303TRPBF

Infineon Technologies

MOSFET N-CH 30V 4.6A SOT223
IRLL024ZTRPBF

Infineon Technologies

MOSFET N-CH 55V 5A SOT223
IRLL2703TRPBF

Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223
IRLL2703PBF

Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223

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IRLL014NTR Specification

Part Number	Manufacturers	Description	Stock	Price
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	5000	2500 $0.2127
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	2705	1 $0.5024 10 $0.4265 25 $0.4096 100 $0.289 250 $0.262 500 $0.2358 1000 $0.2176
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	19052	1 $0.78 10 $0.686 100 $0.5371 500 $0.4062 1000 $0.3314
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	19052	1 $0.78 10 $0.686 100 $0.5371 500 $0.4062 1000 $0.3314
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Compliant	17500	2500 $0.29453
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT-223 RoHS: Compliant	1529	1 $1.34 10 $1.191 100 $0.941 500 $0.72976 1000 $0.57613
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT-223 RoHS: Compliant	1529	1 $1.34 10 $1.191 100 $0.941 500 $0.72976 1000 $0.57613
IRLL014NTR DISTI #IRLL014NTR	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT223 RoHS: Not Compliant	0
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET N-CH 55V 2A SOT-223 RoHS: Compliant	0	2500 $0.52206
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	55000	2500 $0.1814 5000 $0.1766
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	5000	2500 $0.2127
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	2705	35 $0.4096 100 $0.289 250 $0.262 500 $0.2358 1000 $0.2176
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223	2500	36 $0.7242 50 $0.4819 100 $0.394 500 $0.3328 1000 $0.2933
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	12500	2500 $0.10106 5000 $0.1
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	240000	2500 $0.2279 5000 $0.1869 10000 $0.1709 15000 $0.1579 25000 $0.1469
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	2500 $0.42019 5000 $0.40292 7500 $0.39748 12500 $0.38199 25000 $0.37709 62500 $0.36767 125000 $0.3587
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	2500 $0.4879 5000 $0.4699 10000 $0.4529 15000 $0.4379 25000 $0.4299
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	2500 $0.6319 5000 $0.5169 10000 $0.4739 15000 $0.4369 25000 $0.4059
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	1 $0.2439 25 $0.2349 62 $0.2269 125 $0.2199 312 $0.2119 625 $0.2059 1250 $0.1999
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A 4-Pin(3 Tab) SOT-223 T/ RoHS: Compliant	0	2500 $0.1899 5000 $0.1829 10000 $0.1759 15000 $0.1699 25000 $0.1669
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 2A, SOT-223, Transistor Po	1172	1 $0.769 10 $0.644 25 $0.572 50 $0.5 100 $0.429 250 $0.402 500 $0.376 1000 $0.35
IRLL014NTRPBF. DISTI #IRLL014NTRPBF.	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0	1 $0.19 5000 $0.183 10000 $0.176 15000 $0.17 25000 $0.167
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET, N CHANNEL, 55V, 2A, SOT-223, Transistor P	2440	1 $1.12 10 $0.95 100 $0.729 500 $0.645 1000 $0.509 2500 $0.451 10000 $0.434
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.14Ohm RoHS: Compliant	0	2500 $0.49
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Single N-Channel 55V 0.28 Ohm 14 nC HEXFET Power M RoHS: Compliant	2500	2500 $0.205
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier	Power Field-Effect Transistor, 2A I(D), 55V, 0.14o RoHS: Compliant	632	1 $0.23 25 $0.21 100 $0.2 500 $0.19 1000 $0.18
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl RoHS: Compliant	24120	1 $0.62 10 $0.512 100 $0.33 1000 $0.264
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET 55V, Logic level 2A 140 mOhm Auto MOSFET RoHS: Compliant	2800	1 $1.12 10 $0.95 100 $0.729 500 $0.645 1000 $0.509 2500 $0.451 10000 $0.434
IRLL014NTR DISTI #IRLL014NTR	International Rectifier	MOSFET Transistor, N-Channel, SOT-223	503	1 $0.8 34 $0.4 151 $0.28
IRLL014NTR DISTI #IRLL014NTR	International Rectifier	MOSFET Transistor, N-Channel, SOT-223	1720	1 $1.631 246 $0.6524 1227 $0.5709
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	2 A, 55 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET,	176	1 $0.65 9 $0.52 39 $0.325
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier	2 A, 55 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET,	1920	1 $1.0435 384 $0.4174 1918 $0.3652
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 2.8A 55V SOT-223, RL	6150	100 $0.23 500 $0.205 1000 $0.178 2500 $0.152
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 2.8A 55V SOT-223, PK	1850	25 $0.404 100 $0.23 500 $0.205 1000 $0.178 2500 $0.152
IRLL014NTR DISTI #IRLL014NTR	International Rectifier		2338
IRLL014NTR DISTI #IRLL014NTR	International Rectifier		3868
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG		220	11 $0.4875 43 $0.3169 159 $0.1828
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier		2018
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier		2300
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 2A, 2.1W,	8082	3 $0.271 25 $0.2394 100 $0.2157 500 $0.201 2500 $0.1863
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	N-LogL 55V 2,8A 2,1W 0,14R SOT223 RoHS: Compliant	24050	50 $0.21 100 $0.17 500 $0.15 2500 $0.1445
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier	RoHS: Compliant	2500
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET 55V 2A RoHS: Compliant	17500	2500 $0.261 5000 $0.2461 7500 $0.2312 12500 $0.2088 20000 $0.2014
IRLL014NTRPBF DISTI #IRLL014NTRPBF	International Rectifier	INSTOCK	2177
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET, N CH 55V, 2A, SOT-223 RoHS: Compliant	2482	1 $0.981 10 $0.811 100 $0.522 1000 $0.418 2500 $0.353
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET, N-CH, 55V, 2A, SOT-223 RoHS: Compliant	2440	1 $1.78 10 $1.51 100 $1.16 500 $1.03 1000 $0.806 2500 $0.714 10000 $0.698
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	MOSFET, N CH 55V, 2A, SOT-223 RoHS: Compliant	1315	5 $0.444 25 $0.412 100 $0.235 250 $0.222 500 $0.209
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	MOSFET, N-CH, 55V, 2A, SOT-223 RoHS: Compliant	2440	5 $0.809 25 $0.726 100 $0.558 250 $0.526 500 $0.493
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	2500	10 $0.568 50 $0.378 100 $0.309 500 $0.261 1000 $0.23 2500 $0.209
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A Automotive 4-Pin(3 Tab) RoHS: Compliant	2399	10 $0.7983 25 $0.795 100 $0.6314 250 $0.6247
AUIRLL014NTR DISTI #AUIRLL014NTR	Infineon Technologies AG	Trans MOSFET N-CH 55V 2.8A Automotive 4-Pin(3 Tab) RoHS: Compliant	7500	2500 $0.571
IRLL014NTRPBF DISTI #IRLL014NTRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 2.8A 4-Pin(3 Tab) SOT-223 RoHS: Compliant	2705	10 $0.4063 25 $0.4046 100 $0.2687

IRLL014~~(9)~~
IRLL01~~(9)~~
IRLL0~~(17)~~
IRLL~~(41)~~
IRL~~(58)~~

Infineon Technologies IRLL014NTR

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