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IRLH5030TR2PBF

Infineon Technologies IRLH5030TR2PBF

Part Number:
IRLH5030TR2PBF
Manufacturer:
Infineon Technologies
Ventron No:
2493749-IRLH5030TR2PBF
Description:
MOSFET N-CH 100V 13A 8PQFN
ECAD Model:
Datasheet:
IRLH5030TR2PBF

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Specifications
Infineon Technologies IRLH5030TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLH5030TR2PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Supplier Device Package
    PQFN (5x6) Single Die
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    3.6W
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation
    250W
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5185pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    13A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    94nC @ 10V
  • Rise Time
    72ns
  • Drain to Source Voltage (Vdss)
    100V
  • Fall Time (Typ)
    41 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    5.185nF
  • Recovery Time
    48 ns
  • Drain to Source Resistance
    9.9mOhm
  • Rds On Max
    9 mΩ
  • Nominal Vgs
    2.5 V
  • Height
    990.6μm
  • Length
    6.1468mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRLH5030TR2PBF Features 
Low RDSon (?ü9.0m|?￡? Low Thermal Resistance to PCB (?ü0.5??C/W) 100% Rg tested Low Profile (?ü0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide, and no Halogen MSL1, Industrial Qualification

IRLH5030TR2PBF Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters

IRLH5030TR2PBF More Descriptions
MOSFET, 100V, 100A, 9.0 mOhm max, 44 nC Qg, PQFN, Logic Level
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
MOSFET,N CH,30V,13A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to IRLH5030TR2PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Technology
    Number of Elements
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Transistor Element Material
    Operating Temperature
    Number of Terminations
    ECCN Code
    Subcategory
    Terminal Position
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Resistance
    View Compare
  • IRLH5030TR2PBF
    IRLH5030TR2PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    PQFN (5x6) Single Die
    Cut Tape (CT)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    250W
    21 ns
    N-Channel
    9mOhm @ 50A, 10V
    2.5V @ 150μA
    5185pF @ 50V
    13A Ta 100A Tc
    94nC @ 10V
    72ns
    100V
    41 ns
    41 ns
    100A
    2.5V
    16V
    100V
    5.185nF
    48 ns
    9.9mOhm
    9 mΩ
    2.5 V
    990.6μm
    6.1468mm
    5.15mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLHS6242TRPBF
    IRLHS6242TRPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    6-PowerVDFN
    6
    -
    Tape & Reel (TR)
    HEXFET®
    2011
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    9.6W
    5.8 ns
    N-Channel
    11.7m Ω @ 8.5A, 4.5V
    1.1V @ 10μA
    1110pF @ 10V
    10A Ta 12A Tc
    14nC @ 4.5V
    15ns
    -
    13 ns
    19 ns
    10A
    800mV
    12V
    20V
    -
    -
    -
    -
    800 mV
    950μm
    2.1mm
    2.1mm
    No SVHC
    No
    ROHS3 Compliant
    12 Weeks
    SILICON
    -55°C~150°C TJ
    6
    EAR99
    FET General Purpose Power
    DUAL
    1.98W Ta 9.6W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    2.5V 4.5V
    ±12V
    88A
    Lead Free
    -
    IRLH5030TR2PBF vs IRLHS6242TRPBF
  • IRLH5036TR2PBF
    IRLH5036TR2PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    8-PQFN (5x6)
    Cut Tape (CT)
    HEXFET®
    2012
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    160W
    23 ns
    N-Channel
    4.4mOhm @ 50A, 10V
    2.5V @ 150μA
    5360pF @ 25V
    20A Ta 100A Tc
    90nC @ 10V
    48ns
    60V
    15 ns
    28 ns
    100A
    1V
    16V
    60V
    5.36nF
    42 ns
    4.4mOhm
    4.4 mΩ
    1 V
    810μm
    5mm
    5.0038mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLH5030TR2PBF vs IRLH5036TR2PBF
  • IRLH6224TR2PBF
    IRLH6224TR2PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    8-PQFN (5x6)
    Cut Tape (CT)
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    -
    3.6W
    9.4 ns
    N-Channel
    3mOhm @ 20A, 4.5V
    1.1V @ 50μA
    3710pF @ 10V
    28A Ta 105A Tc
    86nC @ 10V
    23ns
    20V
    36 ns
    67 ns
    28A
    800mV
    12V
    20V
    3.71nF
    57 ns
    3mOhm
    3 mΩ
    800 mV
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Lead Free
    3MOhm
    IRLH5030TR2PBF vs IRLH6224TR2PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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