IRLD120

Vishay Siliconix IRLD120

Part Number:
IRLD120
Manufacturer:
Vishay Siliconix
Ventron No:
2488226-IRLD120
Description:
MOSFET N-CH 100V 1.3A 4-DIP
ECAD Model:
Datasheet:
IRLD120

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Specifications
Vishay Siliconix IRLD120 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD120.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    270mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    1.3A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    9.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270mOhm @ 780mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    490pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Rise Time
    64ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    64 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    1.3A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    490pF
  • Drain to Source Resistance
    270mOhm
  • Rds On Max
    270 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRLD120 Overview
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.

IRLD120 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)


IRLD120 Applications
There are a lot of Vishay Siliconix
IRLD120 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLD120 More Descriptions
Trans MOSFET N-CH 100V 1.3A 4-Pin HexDIP
MOSFET N-CH 100V 1.3A 4-DIP
LOGIC MOSFET N-CHANNEL 100V
MOSFET N-CH 100V 1.3A 4DIP
Product Comparison
The three parts on the right have similar specifications to IRLD120.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Element Configuration
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRLD120
    IRLD120
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    270mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    1
    1.3W Ta
    1.3W
    9.8 ns
    N-Channel
    270mOhm @ 780mA, 5V
    2V @ 250μA
    490pF @ 25V
    1.3A Ta
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    64 ns
    21 ns
    1.3A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    3.37mm
    5mm
    6.29mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
  • IRLD014
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    1.7A
    -
    1
    1.3W Ta
    1.3W
    9.3 ns
    N-Channel
    200mOhm @ 1A, 5V
    2V @ 250μA
    400pF @ 25V
    1.7A Ta
    8.4nC @ 5V
    110ns
    60V
    4V 5V
    ±10V
    110 ns
    17 ns
    1.7A
    10V
    60V
    400pF
    200mOhm
    200 mΩ
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
  • IRLD110PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    540mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1A
    1
    -
    1.3W Ta
    1.3W
    9.3 ns
    N-Channel
    540mOhm @ 600mA, 5V
    2V @ 250μA
    250pF @ 25V
    1A Ta
    6.1nC @ 5V
    47ns
    100V
    4V 5V
    ±10V
    47 ns
    16 ns
    1A
    10V
    100V
    250pF
    540mOhm
    540 mΩ
    3.37mm
    5mm
    6.29mm
    No
    ROHS3 Compliant
    Lead Free
    8 Weeks
    Single
    2V
    2 V
    Unknown
  • IRLD120PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    270mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    -
    1.3W Ta
    1.3W
    9.8 ns
    N-Channel
    270mOhm @ 780mA, 5V
    2V @ 250μA
    490pF @ 25V
    1.3A Ta
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    64 ns
    21 ns
    1.3A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    3.3782mm
    6.2738mm
    5.0038mm
    No
    ROHS3 Compliant
    Lead Free
    8 Weeks
    Single
    2V
    -
    Unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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