Vishay Siliconix IRLD120
- Part Number:
- IRLD120
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488226-IRLD120
- Description:
- MOSFET N-CH 100V 1.3A 4-DIP
- Datasheet:
- IRLD120
Vishay Siliconix IRLD120 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD120.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance270mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating1.3A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time9.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 780mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time64ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)64 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)1.3A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage100V
- Input Capacitance490pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRLD120 Overview
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLD120 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRLD120 Applications
There are a lot of Vishay Siliconix
IRLD120 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 270mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLD120 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRLD120 Applications
There are a lot of Vishay Siliconix
IRLD120 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLD120 More Descriptions
Trans MOSFET N-CH 100V 1.3A 4-Pin HexDIP
MOSFET N-CH 100V 1.3A 4-DIP
LOGIC MOSFET N-CHANNEL 100V
MOSFET N-CH 100V 1.3A 4DIP
MOSFET N-CH 100V 1.3A 4-DIP
LOGIC MOSFET N-CHANNEL 100V
MOSFET N-CH 100V 1.3A 4DIP
The three parts on the right have similar specifications to IRLD120.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeFactory Lead TimeElement ConfigurationThreshold VoltageNominal VgsREACH SVHCView Compare
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IRLD120Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)270mOhm175°C-55°C100VMOSFET (Metal Oxide)1.3A111.3W Ta1.3W9.8 nsN-Channel270mOhm @ 780mA, 5V2V @ 250μA490pF @ 25V1.3A Ta12nC @ 5V64ns100V4V 5V±10V64 ns21 ns1.3A10V100V490pF270mOhm270 mΩ3.37mm5mm6.29mmNoNon-RoHS CompliantContains Lead------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2013Obsolete1 (Unlimited)-150°C-55°C60VMOSFET (Metal Oxide)1.7A-11.3W Ta1.3W9.3 nsN-Channel200mOhm @ 1A, 5V2V @ 250μA400pF @ 25V1.7A Ta8.4nC @ 5V110ns60V4V 5V±10V110 ns17 ns1.7A10V60V400pF200mOhm200 mΩ3.37mm5mm6.29mm-Non-RoHS CompliantContains Lead-----
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2011Active1 (Unlimited)540mOhm175°C-55°C100VMOSFET (Metal Oxide)1A1-1.3W Ta1.3W9.3 nsN-Channel540mOhm @ 600mA, 5V2V @ 250μA250pF @ 25V1A Ta6.1nC @ 5V47ns100V4V 5V±10V47 ns16 ns1A10V100V250pF540mOhm540 mΩ3.37mm5mm6.29mmNoROHS3 CompliantLead Free8 WeeksSingle2V2 VUnknown
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2004Active1 (Unlimited)270mOhm175°C-55°C100VMOSFET (Metal Oxide)1.3A1-1.3W Ta1.3W9.8 nsN-Channel270mOhm @ 780mA, 5V2V @ 250μA490pF @ 25V1.3A Ta12nC @ 5V64ns100V4V 5V±10V64 ns21 ns1.3A10V100V490pF270mOhm270 mΩ3.3782mm6.2738mm5.0038mmNoROHS3 CompliantLead Free8 WeeksSingle2V-Unknown
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