IRLD024

Vishay Siliconix IRLD024

Part Number:
IRLD024
Manufacturer:
Vishay Siliconix
Ventron No:
3070980-IRLD024
Description:
MOSFET N-CH 60V 2.5A 4-DIP
ECAD Model:
Datasheet:
IRLD024

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Specifications
Vishay Siliconix IRLD024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD024.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    2.5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 1.5A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 5V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    110 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    2.5A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    870pF
  • Drain to Source Resistance
    100mOhm
  • Rds On Max
    100 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRLD024 Overview
The maximum input capacitance of this device is 870pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.5A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 100mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.

IRLD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)


IRLD024 Applications
There are a lot of Vishay Siliconix
IRLD024 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRLD024 More Descriptions
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
60V SINGLE N-CHN MOSFET HEXDIP
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRLD024.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Resistance
    Radiation Hardening
    Factory Lead Time
    Element Configuration
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRLD024
    IRLD024
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    2.5A
    1
    1
    1.3W Ta
    1.3W
    11 ns
    N-Channel
    100mOhm @ 1.5A, 5V
    2V @ 250μA
    870pF @ 25V
    2.5A Ta
    18nC @ 5V
    110ns
    60V
    4V 5V
    ±10V
    110 ns
    23 ns
    2.5A
    10V
    60V
    870pF
    100mOhm
    100 mΩ
    3.37mm
    5mm
    6.29mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLD120
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    1
    1.3W Ta
    1.3W
    9.8 ns
    N-Channel
    270mOhm @ 780mA, 5V
    2V @ 250μA
    490pF @ 25V
    1.3A Ta
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    64 ns
    21 ns
    1.3A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    3.37mm
    5mm
    6.29mm
    Non-RoHS Compliant
    Contains Lead
    270mOhm
    No
    -
    -
    -
    -
    -
  • IRLD110PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1A
    1
    -
    1.3W Ta
    1.3W
    9.3 ns
    N-Channel
    540mOhm @ 600mA, 5V
    2V @ 250μA
    250pF @ 25V
    1A Ta
    6.1nC @ 5V
    47ns
    100V
    4V 5V
    ±10V
    47 ns
    16 ns
    1A
    10V
    100V
    250pF
    540mOhm
    540 mΩ
    3.37mm
    5mm
    6.29mm
    ROHS3 Compliant
    Lead Free
    540mOhm
    No
    8 Weeks
    Single
    2V
    2 V
    Unknown
  • IRLD120PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    -
    1.3W Ta
    1.3W
    9.8 ns
    N-Channel
    270mOhm @ 780mA, 5V
    2V @ 250μA
    490pF @ 25V
    1.3A Ta
    12nC @ 5V
    64ns
    100V
    4V 5V
    ±10V
    64 ns
    21 ns
    1.3A
    10V
    100V
    490pF
    270mOhm
    270 mΩ
    3.3782mm
    6.2738mm
    5.0038mm
    ROHS3 Compliant
    Lead Free
    270mOhm
    No
    8 Weeks
    Single
    2V
    -
    Unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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