Vishay Siliconix IRLD024
- Part Number:
- IRLD024
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070980-IRLD024
- Description:
- MOSFET N-CH 60V 2.5A 4-DIP
- Datasheet:
- IRLD024
Vishay Siliconix IRLD024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD024.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.5A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.5A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
- Rise Time110ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)110 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)2.5A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage60V
- Input Capacitance870pF
- Drain to Source Resistance100mOhm
- Rds On Max100 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRLD024 Overview
The maximum input capacitance of this device is 870pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.5A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 100mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.
IRLD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLD024 Applications
There are a lot of Vishay Siliconix
IRLD024 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 870pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.5A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 23 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 100mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.
IRLD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLD024 Applications
There are a lot of Vishay Siliconix
IRLD024 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRLD024 More Descriptions
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
60V SINGLE N-CHN MOSFET HEXDIP
French Electronic Distributor since 1988
60V SINGLE N-CHN MOSFET HEXDIP
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRLD024.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeResistanceRadiation HardeningFactory Lead TimeElement ConfigurationThreshold VoltageNominal VgsREACH SVHCView Compare
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IRLD024Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)150°C-55°C60VMOSFET (Metal Oxide)2.5A111.3W Ta1.3W11 nsN-Channel100mOhm @ 1.5A, 5V2V @ 250μA870pF @ 25V2.5A Ta18nC @ 5V110ns60V4V 5V±10V110 ns23 ns2.5A10V60V870pF100mOhm100 mΩ3.37mm5mm6.29mmNon-RoHS CompliantContains Lead--------
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)1.3A111.3W Ta1.3W9.8 nsN-Channel270mOhm @ 780mA, 5V2V @ 250μA490pF @ 25V1.3A Ta12nC @ 5V64ns100V4V 5V±10V64 ns21 ns1.3A10V100V490pF270mOhm270 mΩ3.37mm5mm6.29mmNon-RoHS CompliantContains Lead270mOhmNo-----
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2011Active1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)1A1-1.3W Ta1.3W9.3 nsN-Channel540mOhm @ 600mA, 5V2V @ 250μA250pF @ 25V1A Ta6.1nC @ 5V47ns100V4V 5V±10V47 ns16 ns1A10V100V250pF540mOhm540 mΩ3.37mm5mm6.29mmROHS3 CompliantLead Free540mOhmNo8 WeeksSingle2V2 VUnknown
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2004Active1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)1.3A1-1.3W Ta1.3W9.8 nsN-Channel270mOhm @ 780mA, 5V2V @ 250μA490pF @ 25V1.3A Ta12nC @ 5V64ns100V4V 5V±10V64 ns21 ns1.3A10V100V490pF270mOhm270 mΩ3.3782mm6.2738mm5.0038mmROHS3 CompliantLead Free270mOhmNo8 WeeksSingle2V-Unknown
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