Vishay Siliconix IRLD014
- Part Number:
- IRLD014
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851439-IRLD014
- Description:
- MOSFET N-CH 60V 1.7A 4-DIP
- Datasheet:
- IRLD014
Vishay Siliconix IRLD014 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD014.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating1.7A
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time9.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs8.4nC @ 5V
- Rise Time110ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)110 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)1.7A
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage60V
- Input Capacitance400pF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRLD014 Overview
A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLD014 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLD014 Applications
There are a lot of Vishay Siliconix
IRLD014 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLD014 Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLD014 Applications
There are a lot of Vishay Siliconix
IRLD014 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLD014 More Descriptions
Trans MOSFET N-CH 60V 1.7A 4-Pin HexDIP
MOSFET N-CH 60V 1.7A 4-DIP
LOGIC MOSFET N-CHANNEL 60V
MOSFET N-CH 60V 1.7A 4-DIP
LOGIC MOSFET N-CHANNEL 60V
The three parts on the right have similar specifications to IRLD014.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeResistanceNumber of ElementsRadiation HardeningFactory Lead TimeElement ConfigurationThreshold VoltageNominal VgsREACH SVHCView Compare
-
IRLD014Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2013Obsolete1 (Unlimited)150°C-55°C60VMOSFET (Metal Oxide)1.7A11.3W Ta1.3W9.3 nsN-Channel200mOhm @ 1A, 5V2V @ 250μA400pF @ 25V1.7A Ta8.4nC @ 5V110ns60V4V 5V±10V110 ns17 ns1.7A10V60V400pF200mOhm200 mΩ3.37mm5mm6.29mmNon-RoHS CompliantContains Lead---------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2013Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)-11.3W Ta-9.3 nsN-Channel540mOhm @ 600mA, 5V2V @ 250μA250pF @ 25V1A Ta6.1nC @ 5V47ns100V4V 5V±10V47 ns16 ns1A10V100V250pF540mOhm540 mΩ3.37mm5mm6.29mmNon-RoHS Compliant---------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)1.3A11.3W Ta1.3W9.8 nsN-Channel270mOhm @ 780mA, 5V2V @ 250μA490pF @ 25V1.3A Ta12nC @ 5V64ns100V4V 5V±10V64 ns21 ns1.3A10V100V490pF270mOhm270 mΩ3.37mm5mm6.29mmNon-RoHS CompliantContains Lead270mOhm1No-----
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2011Active1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)1A-1.3W Ta1.3W9.3 nsN-Channel540mOhm @ 600mA, 5V2V @ 250μA250pF @ 25V1A Ta6.1nC @ 5V47ns100V4V 5V±10V47 ns16 ns1A10V100V250pF540mOhm540 mΩ3.37mm5mm6.29mmROHS3 CompliantLead Free540mOhm1No8 WeeksSingle2V2 VUnknown
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect... -
21 September 2023
8 bit AVR Microcontroller ATMEGA32U4-AU
Ⅰ. Overview of ATMEGA32U4-AUⅡ. Symbol and Footprint of ATMEGA32U4-AUⅢ. Technical parametersⅣ. Features of ATMEGA32U4-AUⅤ. Pin descriptionⅥ. What types of products is ATMEGA32U4-AU suitable for?Ⅰ. Overview of ATMEGA32U4-AUATMEGA32U4-AU is... -
21 September 2023
Difference Between 2N2222 and BC547 Transistor
Ⅰ. What is 2N2222?Ⅱ. What is BC547?Ⅲ. 2N2222 vs BC547 symbolⅣ. 2N2222 vs BC547 technical parametersⅤ. 2N2222 vs BC547 pin comparisonⅥ. 2N2222 vs BC547 featuresⅦ. 2N2222 vs BC547... -
22 September 2023
Power Transistor IC LM317LZ: Symbol, Features and Package
Ⅰ. Overview of LM317LZⅡ. Symbol and Footprint of LM317LZⅢ. Technical parametersⅣ. Features of LM317LZⅤ. Pins and package of LM317LZⅥ. Advantages and disadvantages of LM317LZⅦ. How to optimize the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.