Infineon Technologies IRL2203NPBF

Name: IRL2203NPBF
Brand: Infineon Technologies
SKU: 2479385-IRL2203NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL2203NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479385-IRL2203NPBF

Description:: MOSFET N-CH 30V 116A TO-220AB

ECAD Model:

Datasheet:: IRL2203NPBF

Specifications

Infineon Technologies IRL2203NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL2203NPBF.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2001
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
7MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
116A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
130W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
116A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 4.5V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
66 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
116A
Threshold Voltage
1V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
400A
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
290 mJ
Recovery Time
84 ns
Nominal Vgs
1 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRL2203NPBF Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRL2203NPBF Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free

IRL2203NPBF More Descriptions

Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 30V 116A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W
Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

Product Comparison

The three parts on the right have similar specifications to IRL2203NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
IRL2203NPBF

Infineon Technologies

14 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

7MOhm

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

30V

MOSFET (Metal Oxide)

116A

2.54mm

1

180W Tc

Single

ENHANCEMENT MODE

130W

DRAIN

11 ns

N-Channel

SWITCHING

7m Ω @ 60A, 10V

1V @ 250μA

3290pF @ 25V

116A Tc

60nC @ 4.5V

160ns

4.5V 10V

±16V

66 ns

23 ns

116A

1V

TO-220AB

16V

75A

30V

400A

30V

290 mJ

84 ns

1 V

15.24mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-
IRL2203NL

Infineon Technologies

-

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.8W Ta 180W Tc

-

-

-

-

-

N-Channel

-

7mOhm @ 60A, 10V

3V @ 250μA

3290pF @ 25V

116A Tc

60nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TO-262

30V

IRL2203NPBF vs IRL2203NL
IRL2910SPBF

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.8W Ta 200W Tc

-

-

-

-

-

N-Channel

-

26mOhm @ 29A, 10V

2V @ 250μA

3.7pF @ 25V

55A Tc

140nC @ 5V

-

4V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

D2PAK

100V

IRL2203NPBF vs IRL2910SPBF
IRL2703STRLPBF

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

45W Tc

-

-

-

-

-

N-Channel

-

40m Ω @ 14A, 10V

1V @ 250μA

450pF @ 25V

24A Tc

15nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

IRL2203NPBF vs IRL2703STRLPBF

Certification

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IRL2203NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL2203NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 116A 3-Pin(3 Tab) TO-220A	4882	25 $0.7104 100 $0.6672 250 $0.6384 500 $0.6192 1000 $0.5808
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 116A TO-220AB RoHS: Compliant	1447	1 $1.68 50 $1.3444 100 $1.1764 500 $0.91228 1000 $0.72023
IRL2203NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 116A 3-Pin(3 Tab) TO-220A RoHS: Compliant	4882	5 $1.53 25 $1.24 100 $1.02 500 $0.942 1000 $0.721 2000 $0.669
IRL2203NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	450	1000 $0.4275 2000 $0.40993 3000 $0.40439 5000 $0.38864 10000 $0.38365 25000 $0.37406 50000 $0.36494
IRL2203NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	335	1 $0.9549 10 $0.8809 25 $0.8779 50 $0.8759 100 $0.7249 500 $0.5659 1000 $0.5089
IRL2203NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	1900	1 $1.2339 10 $0.9699 25 $0.9229 50 $0.9209 100 $0.8029 500 $0.7099 1000 $0.5599
IRL2203NPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 116A, TO-220AB, Transistor	95	1 $1.44 10 $1.23 100 $0.939 500 $0.83 1000 $0.655 2500 $0.581 10000 $0.559
IRL2203NPBF DISTI #	Infineon Technologies AG	IRL2203NPBF N-channel MOSFET Transistor, 116 A, RoHS: Compliant	0	750 $1.877
IRL2203NPBF DISTI #	Infineon Technologies AG	Single N-Channel 30 V 7 mOhm 60 nC HEXFET Power Mo RoHS: Compliant	600	25 $0.74 250 $0.52 1000 $0.475 2000 $0.455
IRL2203NPBF DISTI #	International Rectifier	RoHS: Not Compliant	590	1 $0.71 25 $0.66 100 $0.63 500 $0.61 1000 $0.58
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB RoHS: Compliant	1065	1 $1.44 10 $1.23 100 $0.939 500 $0.83 1000 $0.655 2500 $0.581 10000 $0.559
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 116A TO220AB, EA	200	1 $2 10 $0.72 25 $0.71
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 116A TO220AB, TU	1800	10 $0.72 25 $0.71
IRL2203NPBF DISTI #	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	200	1 $2.31 50 $1.155 131 $1.0395
IRL2203NPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 100A, 130	1669	1 $1.19 3 $1.1 10 $0.89 50 $0.81
IRL2203NPBF DISTI #	Infineon Technologies AG	N-CH 30V 116A 7mOhm TO220-3 RoHS: Compliant	1500	50 $0.9177 150 $0.8653 300 $0.8128 600 $0.7342 1000 $0.7079
IRL2203NPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	17460	1350 $0.5214 17460 $0.4867
IRL2203NPBF DISTI #	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 117AI(C),1200VV RoHS: Compliant	22748	150 $1.48 22748 $1.35
IRL2203NPBF DISTI #	Infineon Technologies AG	N-LogL 30V 75A 180W 0,007R TO220AB RoHS: Compliant	1010	10 $0.848 50 $0.608 200 $0.548 500 $0.5276
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 30V, 100A, TO-220 RoHS: Compliant	1092	5 $0.734 25 $0.724 100 $0.709 250 $0.693 500 $0.641
IRL2203NPBF DISTI #	International Rectifier	N CHANNEL MOSFET, 30V, 116A, TO-220AB RoHS: Compliant	95	1 $2.28 10 $1.95 100 $1.5 500 $1.32 1000 $1.04 2500 $0.92 10000 $0.904
IRL2203NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 30V, 100A, TO-220 RoHS: Compliant	1101	1 $2

IRL2203~~(13)~~
IRL220~~(13)~~
IRL22~~(13)~~
IRL2~~(44)~~
IRL~~(58)~~

Infineon Technologies IRL2203NPBF

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