Infineon Technologies IRL2505PBF

Name: IRL2505PBF
Brand: Infineon Technologies
SKU: 2849005-IRL2505PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL2505PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2849005-IRL2505PBF

Description:: MOSFET N-CH 55V 104A TO-220AB

ECAD Model:

Datasheet:: IRL2505PBF

Specifications

Infineon Technologies IRL2505PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL2505PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
8mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
104A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 54A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
104A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 5V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
84 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
104A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
90A
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Avalanche Energy Rating (Eas)
500 mJ
Recovery Time
210 ns
Nominal Vgs
2 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRL2505PBF Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for a variety of applications.TO-220 is the first choice for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.
IRL2505PBF Features
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175℃ Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
IRL2505PBF Applications
commercial and industrial applications

IRL2505PBF More Descriptions

MOSFET, 55V, 104A, 8 mOhm, 86.7 nC Qg, Logic Level, TO-220AB
Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 55V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

Product Comparison

The three parts on the right have similar specifications to IRL2505PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

JESD-609 Code

Pbfree Code

Terminal Finish

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Configuration

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRL2505PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3

Through Hole

EAR99

8mOhm

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

NOT SPECIFIED

104A

NOT SPECIFIED

Not Qualified

1

200W Tc

Single

ENHANCEMENT MODE

200W

DRAIN

12 ns

N-Channel

SWITCHING

8m Ω @ 54A, 10V

2V @ 250μA

5000pF @ 25V

104A Tc

130nC @ 5V

160ns

4V 10V

±16V

84 ns

43 ns

104A

2V

TO-220AB

16V

90A

55V

55V

500 mJ

210 ns

2 V

15.24mm

10.5156mm

4.69mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL2203NL

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

3.8W Ta 180W Tc

-

-

-

-

-

N-Channel

-

7mOhm @ 60A, 10V

3V @ 250μA

3290pF @ 25V

116A Tc

60nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TO-262

30V

-

-

-

-

-

-

-

-

-

-

IRL2505PBF vs IRL2203NL
IRL2203STRL

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

1996

Discontinued

1 (Unlimited)

2

-

EAR99

-

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

Not Qualified

1

3.8W Ta 130W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

7m Ω @ 60A, 10V

2.5V @ 250μA

3500pF @ 25V

100A Tc

110nC @ 4.5V

-

4V 10V

±20V

-

-

100A

-

-

-

92A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

30V

e0

no

TIN LEAD

SINGLE

GULL WING

unknown

R-PSSO-G2

SINGLE

0.01Ohm

30V

IRL2505PBF vs IRL2203STRL
IRL2703STRLPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

45W Tc

-

-

-

-

-

N-Channel

-

40m Ω @ 14A, 10V

1V @ 250μA

450pF @ 25V

24A Tc

15nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

-

-

-

-

-

-

-

-

-

-

IRL2505PBF vs IRL2703STRLPBF

Certification

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IRL2203STRL

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IRL2505PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB T	3821	15 $0.9696 100 $0.9072 500 $0.8208
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB T	1000	7 $3.723 10 $2.652 50 $2.1675 100 $2.1165 200 $2.091
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 104A TO-220AB RoHS: Compliant	1078	1 $2.58 10 $2.329 100 $1.8718 500 $1.45588 1000 $1.2063
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1000	1 $2.92 10 $2.08 50 $1.7 100 $1.66 200 $1.64 500 $1.44
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	3821	5 $1.96 25 $1.59 100 $1.3 500 $1.2 1000 $0.92 2000 $0.853
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	11278	1 $1.3469 10 $1.2209 25 $1.2179 50 $1.2149 100 $1.0289 500 $0.8979 1000 $0.8679
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	6150	1 $1.3599 10 $1.2329 25 $1.2299 50 $1.2269 100 $1.0389 500 $0.9069 1000 $0.8759
IRL2505PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0
IRL2505PBF. DISTI #	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0	1 $2.23 10 $1.9 100 $1.52 500 $1.33 1000 $1.1
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.008Oh RoHS: Compliant	0	1 $2.346 10 $2.07 100 $1.805 500 $1.564 1000 $1.38
IRL2505PBF DISTI #	International Rectifier	RoHS: Not Compliant	100	1 $1.05 25 $0.98 100 $0.94 500 $0.9 1000 $0.85
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB RoHS: Compliant	612	1 $2.23 10 $1.9 100 $1.52 500 $1.33 1000 $1.1
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 104A LOGICFET TO220AB, EA	276	1 $2.67 10 $1.52 25 $1.4
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 104A LOGICFET TO220AB, TU	250	10 $1.52 25 $1.4
IRL2505PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 104A, 200	283	1 $1.78 3 $1.66 10 $1.33 50 $1.13
IRL2505PBF DISTI #	Infineon Technologies AG	N-LogL 55V 104A 200W 0,008R TO220AB RoHS: Compliant	320	10 $1.06 50 $0.756 200 $0.656 500 $0.6315
IRL2505PBF DISTI #	Infineon Technologies AG	N-CHANNEL 55V 104A 8mOhm HEXFET RoHS: Compliant	2000	50 $1.18 150 $1.1062 250 $1.0392 550 $0.9386 1000 $0.9051
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 104A, TO-220 RoHS: Compliant	0	5 $1.55 25 $1.16 100 $1.07 250 $0.987 500 $0.871
IRL2505PBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 104A, TO-220 RoHS: Compliant	0	1 $3.53 10 $3.01 100 $2.41 500 $2.1 1000 $1.75

IRL2505~~(12)~~
IRL250~~(12)~~
IRL25~~(12)~~
IRL2~~(44)~~
IRL~~(58)~~

Infineon Technologies IRL2505PBF

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