Infineon Technologies IRL1404ZPBF

Name: IRL1404ZPBF
Brand: Infineon Technologies
SKU: 2483178-IRL1404ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL1404ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483178-IRL1404ZPBF

Description:: MOSFET N-CH 40V 75A TO-220AB

ECAD Model:

Datasheet:: IRL1404ZPBF

Specifications

Infineon Technologies IRL1404ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL1404ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.1MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Current Rating
75A
Number of Elements
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
19 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.1m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5080pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 5V
Rise Time
180ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
49 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
75A
Threshold Voltage
2.7V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
200A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
790A
Dual Supply Voltage
40V
Avalanche Energy Rating (Eas)
220 mJ
Recovery Time
39 ns
Nominal Vgs
2.7 V
Height
8.77mm
Length
10.6426mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRL1404ZPBF Description
This HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.
IRL1404ZPBF Features
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRL1404ZPBF Applications
The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.

IRL1404ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 40 V 5.9 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 200A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
MOSFET, N, 40V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.1mohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:790A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:2.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.7V

Product Comparison

The three parts on the right have similar specifications to IRL1404ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRL1404ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3

EAR99

3.1MOhm

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

FET General Purpose Power

40V

MOSFET (Metal Oxide)

75A

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

19 ns

N-Channel

SWITCHING

3.1m Ω @ 75A, 10V

2.7V @ 250μA

5080pF @ 25V

75A Tc

110nC @ 5V

180ns

4.5V 10V

±16V

49 ns

30 ns

75A

2.7V

TO-220AB

16V

200A

40V

790A

40V

220 mJ

39 ns

2.7 V

8.77mm

10.6426mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL1104S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

-

1

2.4W Ta 167W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8m Ω @ 62A, 10V

1V @ 250μA

3445pF @ 25V

104A Tc

68nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

104A

-

416A

-

340 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

MATTE TIN OVER NICKEL

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

40V

0.008Ohm

40V

-

-

-

-

-

-

-

IRL1404ZPBF vs IRL1104S
IRL1104PBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

40V

MOSFET (Metal Oxide)

104A

-

167W Tc

Single

-

167W

-

18 ns

N-Channel

-

8mOhm @ 62A, 10V

1V @ 250μA

3445pF @ 25V

104A Tc

68nC @ 4.5V

257ns

4.5V 10V

±16V

64 ns

32 ns

104A

-

-

16V

-

40V

-

40V

-

126 ns

1 V

8.77mm

-

-

No SVHC

-

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

40V

-

-

TO-220AB

Through Hole

175°C

-55°C

3.445nF

12mOhm

8 mΩ

IRL1404ZPBF vs IRL1104PBF
IRL1004

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1999

Obsolete

1 (Unlimited)

3

-

-

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

-

1

200W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

6.5m Ω @ 78A, 10V

1V @ 250μA

5330pF @ 25V

130A Tc

100nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

TO-220AB

-

130A

-

520A

-

700 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

-

-

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

-

SINGLE WITH BUILT-IN DIODE

40V

0.0065Ohm

40V

-

-

-

-

-

-

-

IRL1404ZPBF vs IRL1004

Certification

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IRL1404ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL1404ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 200A 3-Pin(3 Tab) TO-220A RoHS: Compliant	92	1 $1.7249 10 $1.5304 100 $1.2737 500 $1.1653 1000 $0.9943 2000 $0.936 5000 $0.906 10000 $0.876
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 40V 75A TO-220AB RoHS: Compliant	1010	1 $2.65 10 $2.412 100 $1.9654 500 $1.5598 1000 $1.31644
IRL1404ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 200A 3-Pin(3 Tab) TO-220A RoHS: Compliant	10000	25 $0.9984 100 $0.8304 250 $0.8112 500 $0.792 1000 $0.7728
IRL1404ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 200A 3-Pin(3 Tab) TO-220A RoHS: Compliant	92	8 $1.7249 10 $1.5304
IRL1404ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 200A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	13200	1 $1.1899 10 $1.0569 25 $0.9519 50 $0.8649 100 $0.7929 500 $0.7319 1000 $0.6799
IRL1404ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 200A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1000 $0.8499 2000 $0.8189 4000 $0.7889 6000 $0.7629 10000 $0.7489
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 40V, 200A, TO-220, Transistor Polarity	14	1 $2.65 10 $2.41 100 $1.97 500 $1.56 1000 $1.32
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 2.5 Mil RoHS: Compliant	0	1 $4.16 10 $3.67 100 $3.2 500 $2.78 1000 $2.45
IRL1404ZPBF DISTI #	International Rectifier	Power Field-Effect Transistor, 75A I(D), 40V, 0.00 RoHS: Compliant	100	1 $1.2 25 $1.11 100 $1.07 500 $1.03 1000 $0.97
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB RoHS: Compliant	61	1 $2.17 10 $1.85 100 $1.48 500 $1.3 1000 $1.07 2000 $0.996 5000 $0.959
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 40V 200A HEXFET TO220AB, TU	370	10 $1.08 20 $1.05 40 $1.01 100 $0.87
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 40V 200A HEXFET TO220AB, PK	58	2 $1.68 10 $1.08 20 $1.05 40 $1.01 100 $0.87
IRL1404ZPBF DISTI #	International Rectifier		900
IRL1404ZPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 40V, 200A, 230	268	1 $1.59 3 $1.44 10 $1.16 50 $1
IRL1404ZPBF DISTI #	Infineon Technologies AG	N-LogL 40V 120A 230W 0,0031R TO220AB RoHS: Compliant	6570	10 $1.16 50 $0.859 200 $0.759 500 $0.731
IRL1404ZPBF DISTI #	Infineon Technologies AG	N-CH 40V 200A 3,1mOhm TO220-3 RoHS: Compliant	0	1000 $0.9386
IRL1404ZPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	1404	650 $1.07 1404 $1
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 40V, 200A, TO-220 RoHS: Compliant	14	5 $1.07 25 $1.03 100 $0.887 250 $0.848 500 $0.808
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFETs	10000	5 $2.04 25 $1.65 100 $1.36 500 $1.24 1000 $0.956 2000 $0.887
IRL1404ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 40V, 200A, TO-220 RoHS: Compliant	14	1 $3.44 10 $2.93 100 $2.35 500 $2.06 1000 $1.7 2000 $1.58 5000 $1.53 10000 $1.46

IRL1404~~(17)~~
IRL140~~(17)~~
IRL14~~(17)~~
IRL1~~(36)~~
IRL~~(58)~~

Infineon Technologies IRL1404ZPBF

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