Infineon Technologies IRL1104S
- Part Number:
- IRL1104S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586920-IRL1104S
- Description:
- MOSFET N-CH 40V 104A D2PAK
- ECAD Model:
-
- Datasheet:
- IRL1104S
Infineon Technologies IRL1104S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL1104S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN OVER NICKEL
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.4W Ta 167W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 62A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3445pF @ 25V
- Current - Continuous Drain (Id) @ 25°C104A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 4.5V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Drain Current-Max (Abs) (ID)104A
- Drain-source On Resistance-Max0.008Ohm
- Pulsed Drain Current-Max (IDM)416A
- DS Breakdown Voltage-Min40V
- Avalanche Energy Rating (Eas)340 mJ
- RoHS StatusNon-RoHS Compliant
IRL1104S Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRL1104L) is offered.
IRL1104S Features
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
Rds On (Max) @ Id, Vgs: 8m Ω @ 62A, 10V
Drain Current-Max (Abs) (ID): 104A
IRL1104S Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRL1104L) is offered.
IRL1104S Features
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
Rds On (Max) @ Id, Vgs: 8m Ω @ 62A, 10V
Drain Current-Max (Abs) (ID): 104A
IRL1104S Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRL1104S More Descriptions
Trans MOSFET N-CH 40V 104A 3-Pin (2 Tab) D2PAK
CoC and 2-years warranty / RFQ for pricing
MOSFET, N LOGIC D2-PAK; Transistor type:MOSFET; Current, Id cont:104A; Resistance, Rds on:0.008ohm; Case style:TO-263 (D2-Pak); Current, Idm pulse:416A; Marking, SMD:L1104S; Power dissipation:2.4W; Power, Pd:2.4W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:40V; Voltage, Vgs th min:1V
CoC and 2-years warranty / RFQ for pricing
MOSFET, N LOGIC D2-PAK; Transistor type:MOSFET; Current, Id cont:104A; Resistance, Rds on:0.008ohm; Case style:TO-263 (D2-Pak); Current, Idm pulse:416A; Marking, SMD:L1104S; Power dissipation:2.4W; Power, Pd:2.4W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:40V; Voltage, Vgs th min:1V
The three parts on the right have similar specifications to IRL1104S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightREACH SVHCLead FreeHTS CodeView Compare
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IRL1104SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®1998e3Obsolete1 (Unlimited)2EAR99MATTE TIN OVER NICKELAVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE2.4W Ta 167W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 62A, 10V1V @ 250μA3445pF @ 25V104A Tc68nC @ 4.5V40V4.5V 10V±16V104A0.008Ohm416A40V340 mJNon-RoHS Compliant---------------------------- -
Through HoleTO-220-3YESSILICON-55°C~175°C TJTubeHEXFET®1999e3Obsolete1 (Unlimited)2EAR99MATTE TIN OVER NICKELAVALANCHE RATED, LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE167W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 62A, 10V1V @ 250μA3445pF @ 25V104A Tc68nC @ 4.5V40V4.5V 10V±16V104A0.008Ohm416A40V340 mJNon-RoHS Compliant---------------------------
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Through HoleTO-220-3---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------167W Tc--N-Channel-8mOhm @ 62A, 10V1V @ 250μA3445pF @ 25V104A Tc68nC @ 4.5V40V4.5V 10V±16V-----RoHS CompliantThrough Hole3TO-220ABThrough Hole175°C-55°C40V104ASingle167W18 ns257ns64 ns32 ns104A16V40V40V3.445nF126 ns12mOhm8 mΩ1 V8.77mmNo SVHCLead Free-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®1999e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)AVALANCHE RATEDMOSFET (Metal Oxide)SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 200W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.5m Ω @ 78A, 10V1V @ 250μA5330pF @ 25V130A Tc100nC @ 4.5V40V4.5V 10V±16V130A0.0065Ohm520A40V700 mJNon-RoHS Compliant--------------------------8541.29.00.95
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