Infineon Technologies IRL1104PBF
- Part Number:
- IRL1104PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071630-IRL1104PBF
- Description:
- MOSFET N-CH 40V 104A TO-220AB
- Datasheet:
- IRL1104PbF
Infineon Technologies IRL1104PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL1104PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC40V
- TechnologyMOSFET (Metal Oxide)
- Current Rating104A
- Power Dissipation-Max167W Tc
- Element ConfigurationSingle
- Power Dissipation167W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3445pF @ 25V
- Current - Continuous Drain (Id) @ 25°C104A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 4.5V
- Rise Time257ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)64 ns
- Turn-Off Delay Time32 ns
- Continuous Drain Current (ID)104A
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage40V
- Dual Supply Voltage40V
- Input Capacitance3.445nF
- Recovery Time126 ns
- Drain to Source Resistance12mOhm
- Rds On Max8 mΩ
- Nominal Vgs1 V
- Height8.77mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL1104PBF Overview
A device's maximum input capacitance is 3445pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 104A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 12mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL1104PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)
IRL1104PBF Applications
There are a lot of Infineon Technologies
IRL1104PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 3445pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 104A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 12mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL1104PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)
IRL1104PBF Applications
There are a lot of Infineon Technologies
IRL1104PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRL1104PBF More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 40V, 104A, 8 MOHM, 45.3 NC QG, LOGIC LEVEL, TO-220AB | Infineon IRL1104PBF
Trans MOSFET N-CH Si 40V 104A 3-Pin(3 Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
MOSFET, N, 40V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:167W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:416A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
MOSFET, 40V, 104A, 8 MOHM, 45.3 NC QG, LOGIC LEVEL, TO-220AB | Infineon IRL1104PBF
Trans MOSFET N-CH Si 40V 104A 3-Pin(3 Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
MOSFET, N, 40V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:167W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:416A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
The three parts on the right have similar specifications to IRL1104PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightREACH SVHCRoHS StatusLead FreeFactory Lead TimeContact PlatingTransistor Element MaterialNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)LengthWidthRadiation HardeningSurface MountJESD-609 CodeTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRL1104PBFThrough HoleThrough HoleTO-220-33TO-220AB-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)Through Hole175°C-55°C40VMOSFET (Metal Oxide)104A167W TcSingle167W18 nsN-Channel8mOhm @ 62A, 10V1V @ 250μA3445pF @ 25V104A Tc68nC @ 4.5V257ns40V4.5V 10V±16V64 ns32 ns104A16V40V40V3.445nF126 ns12mOhm8 mΩ1 V8.77mmNo SVHCRoHS CompliantLead Free----------------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-2.4W Ta 167W Tc---N-Channel8mOhm @ 62A, 10V1V @ 250μA3445pF @ 25V104A Tc68nC @ 4.5V-40V4.5V 10V±16V-------------Non-RoHS Compliant----------------------------------
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Through HoleThrough HoleTO-220-33--55°C~175°C TJTubeHEXFET®2004Active1 (Unlimited)Through Hole--40VMOSFET (Metal Oxide)130A200W TcSingle200W16 nsN-Channel6.5m Ω @ 78A, 10V1V @ 250μA5330pF @ 25V130A Tc100nC @ 4.5V210ns-4.5V 10V±16V14 ns25 ns130A16V40V40V----1 V8.77mmNo SVHCROHS3 CompliantLead Free12 WeeksTinSILICON3EAR996.5mOhmAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLEFET General Purpose Power1ENHANCEMENT MODEDRAINSWITCHING1VTO-220AB520A700 mJ10.6426mm4.82mmNo--------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®1999Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-3.8W Ta 200W Tc---N-Channel6.5m Ω @ 78A, 10V1V @ 250μA5330pF @ 25V130A Tc100nC @ 4.5V-40V4.5V 10V±16V-------------Non-RoHS Compliant---SILICON2EAR99-AVALANCHE RATED-1ENHANCEMENT MODEDRAINSWITCHING--520A700 mJ---YESe0Tin/Lead (Sn/Pb)8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODE130A0.0065Ohm40V
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