IRL1104PBF

Infineon Technologies IRL1104PBF

Part Number:
IRL1104PBF
Manufacturer:
Infineon Technologies
Ventron No:
3071630-IRL1104PBF
Description:
MOSFET N-CH 40V 104A TO-220AB
ECAD Model:
Datasheet:
IRL1104PbF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRL1104PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL1104PBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    40V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    104A
  • Power Dissipation-Max
    167W Tc
  • Element Configuration
    Single
  • Power Dissipation
    167W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8mOhm @ 62A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3445pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    104A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 4.5V
  • Rise Time
    257ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    64 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    104A
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    40V
  • Dual Supply Voltage
    40V
  • Input Capacitance
    3.445nF
  • Recovery Time
    126 ns
  • Drain to Source Resistance
    12mOhm
  • Rds On Max
    8 mΩ
  • Nominal Vgs
    1 V
  • Height
    8.77mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL1104PBF Overview
A device's maximum input capacitance is 3445pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 104A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 12mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IRL1104PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)


IRL1104PBF Applications
There are a lot of Infineon Technologies
IRL1104PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRL1104PBF More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 40V, 104A, 8 MOHM, 45.3 NC QG, LOGIC LEVEL, TO-220AB | Infineon IRL1104PBF
Trans MOSFET N-CH Si 40V 104A 3-Pin(3 Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
MOSFET, N, 40V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:167W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:416A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Product Comparison
The three parts on the right have similar specifications to IRL1104PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    REACH SVHC
    RoHS Status
    Lead Free
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Number of Elements
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Length
    Width
    Radiation Hardening
    Surface Mount
    JESD-609 Code
    Terminal Finish
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRL1104PBF
    IRL1104PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    Through Hole
    175°C
    -55°C
    40V
    MOSFET (Metal Oxide)
    104A
    167W Tc
    Single
    167W
    18 ns
    N-Channel
    8mOhm @ 62A, 10V
    1V @ 250μA
    3445pF @ 25V
    104A Tc
    68nC @ 4.5V
    257ns
    40V
    4.5V 10V
    ±16V
    64 ns
    32 ns
    104A
    16V
    40V
    40V
    3.445nF
    126 ns
    12mOhm
    8 mΩ
    1 V
    8.77mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL1104STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    2.4W Ta 167W Tc
    -
    -
    -
    N-Channel
    8mOhm @ 62A, 10V
    1V @ 250μA
    3445pF @ 25V
    104A Tc
    68nC @ 4.5V
    -
    40V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL1004PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Active
    1 (Unlimited)
    Through Hole
    -
    -
    40V
    MOSFET (Metal Oxide)
    130A
    200W Tc
    Single
    200W
    16 ns
    N-Channel
    6.5m Ω @ 78A, 10V
    1V @ 250μA
    5330pF @ 25V
    130A Tc
    100nC @ 4.5V
    210ns
    -
    4.5V 10V
    ±16V
    14 ns
    25 ns
    130A
    16V
    40V
    40V
    -
    -
    -
    -
    1 V
    8.77mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    12 Weeks
    Tin
    SILICON
    3
    EAR99
    6.5mOhm
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    1V
    TO-220AB
    520A
    700 mJ
    10.6426mm
    4.82mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL1004S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1999
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 200W Tc
    -
    -
    -
    N-Channel
    6.5m Ω @ 78A, 10V
    1V @ 250μA
    5330pF @ 25V
    130A Tc
    100nC @ 4.5V
    -
    40V
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    SILICON
    2
    EAR99
    -
    AVALANCHE RATED
    -
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    520A
    700 mJ
    -
    -
    -
    YES
    e0
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    130A
    0.0065Ohm
    40V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.