Infineon Technologies IRGS4086PBF
- Part Number:
- IRGS4086PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497058-IRGS4086PBF
- Description:
- IGBT 300V 70A 160W D2PAK
- ECAD Model:
-
- Datasheet:
- IRGB(S)4086PbF
Infineon Technologies IRGS4086PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4086PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Max Power Dissipation160W
- Element ConfigurationSingle
- Power Dissipation160W
- Input TypeStandard
- Power - Max160W
- Collector Emitter Voltage (VCEO)2.96V
- Max Collector Current70A
- Collector Emitter Breakdown Voltage300V
- Voltage - Collector Emitter Breakdown (Max)300V
- Current - Collector (Ic) (Max)70A
- Collector Emitter Saturation Voltage2.1V
- Test Condition196V, 25A, 10Ohm
- Vce(on) (Max) @ Vge, Ic2.96V @ 15V, 120A
- IGBT TypeTrench
- Gate Charge65nC
- Td (on/off) @ 25°C36ns/112ns
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRGS4086PBF Description
This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. The operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.
IRGS4086PBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead Free Package
IRGS4086PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. The operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.
IRGS4086PBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead Free Package
IRGS4086PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRGS4086PBF More Descriptions
300V PLASMA DISPLAY PANEL (PDP) IGBT SWITCH IN A D2-PAK PACKAGE | Infineon IRGS4086PBF
Trans IGBT Chip N-CH 300V 70A 3-Pin (2 Tab) D2PAK
SINGLE IGBT, 300V, 70A; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage, Vces:300V; Power Dissipation, Pd:160W; Collector Emitter Voltage, V(br)ceo:300V; Operating Temperature Range:-40°C to 150°C ;RoHS Compliant: Yes
Trans IGBT Chip N-CH 300V 70A 3-Pin (2 Tab) D2PAK
SINGLE IGBT, 300V, 70A; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage, Vces:300V; Power Dissipation, Pd:160W; Collector Emitter Voltage, V(br)ceo:300V; Operating Temperature Range:-40°C to 150°C ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRGS4086PBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationPower DissipationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeTd (on/off) @ 25°CRadiation HardeningRoHS StatusFactory Lead TimeWeightTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)Current - Collector Pulsed (Icm)Switching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthVoltage - Rated DCCurrent RatingRise TimeReverse Recovery TimeREACH SVHCLead FreeTerminal FormBase Part NumberJESD-30 CodeMax Breakdown VoltageView Compare
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IRGS4086PBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-40°C~150°C TJTube2009Obsolete1 (Unlimited)150°C-40°C160WSingle160WStandard160W2.96V70A300V300V70A2.1V196V, 25A, 10Ohm2.96V @ 15V, 120ATrench65nC36ns/112nsNoRoHS Compliant----------------------------------- -
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~175°C TJTube2005Obsolete1 (Unlimited)--370WSingle370WStandard-2.35V78A600V--2.35V400V, 30A, 10 Ω, 15V2.35V @ 15V, 30ANPT102nC46ns/185nsNoRoHS Compliant11 Weeks2.084002gSILICONe33EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors260301COLLECTORMOTOR CONTROLN-CHANNEL74 ns237 ns120A350μJ (on), 825μJ (off)20V5.5V42ns9.652mm10.668mm4.826mm----------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~150°C TJTube2012Obsolete1 (Unlimited)--90WSingle90WStandard-2.2V13A600V--2V400V, 5A, 100 Ω, 15V2.2V @ 15V, 5ANPT18.2nC25ns/215nsNoRoHS Compliant16 Weeks-SILICONe33EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors260301COLLECTORMOTOR CONTROLN-CHANNEL45 ns258 ns26A110μJ (on), 135μJ (off)20V5.5V27ns9.652mm10.668mm4.826mm600V13A17ns70 nsNo SVHCLead Free----
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)--63WSingle-Standard63W2.5V11A600V---400V, 4A, 100 Ω, 15V2.5V @ 15V, 4ANPT12nC22ns/100nsNoRoHS Compliant16 Weeks260.39037mgSILICONe32-MATTE TIN---1COLLECTORMOTOR CONTROLN-CHANNEL40 ns199 ns22A73μJ (on), 47μJ (off)---------93 ns--GULL WINGIRGS4B60KD1PBFR-PSSO-G2600V
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