Infineon Technologies IRGS4064DPBF
- Part Number:
- IRGS4064DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497088-IRGS4064DPBF
- Description:
- IGBT 600V 20A 101W D2PAK
- ECAD Model:
-
- Datasheet:
- IRGS4064DPbF
Infineon Technologies IRGS4064DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4064DPBF.
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight260.39037mg
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation101W
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max101W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.91V
- Max Collector Current20A
- Reverse Recovery Time62 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 10A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.91V @ 15V, 10A
- IGBT TypeTrench
- Gate Charge32nC
- Current - Collector Pulsed (Icm)40A
- Td (on/off) @ 25°C27ns/79ns
- Switching Energy29μJ (on), 200μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)29ns
- Height4.83mm
- Length10.67mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGS4064DPBF Description
IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.
IRGS4064DPBF Features
Low VCE (on) Trench IGBT technology Low switching losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA Positive VCE (on) temperature coefficient
IRGS4064DPBF Applications
Industrial motor drive UPS Solar Inverters Welding
IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.
IRGS4064DPBF Features
Low VCE (on) Trench IGBT technology Low switching losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA Positive VCE (on) temperature coefficient
IRGS4064DPBF Applications
Industrial motor drive UPS Solar Inverters Welding
IRGS4064DPBF More Descriptions
Trans IGBT Chip N-CH 600V 20A 3-Pin(2 Tab) D2PAK Tube
Target Applications: Dryer; Fan; Pump; Refridgeration; Solar; UPS
600V Low VCEon Copack IGBT in a D2-Pak package
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V Low VCEon Co-Pack IGBT
IGBT, SINGLE, 1.6V, 20A, TO-263
Target Applications: Dryer; Fan; Pump; Refridgeration; Solar; UPS
600V Low VCEon Copack IGBT in a D2-Pak package
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V Low VCEon Co-Pack IGBT
IGBT, SINGLE, 1.6V, 20A, TO-263
The three parts on the right have similar specifications to IRGS4064DPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsCase ConnectionTransistor ApplicationMax Breakdown VoltageTurn On TimeTurn Off Time-Nom (toff)Power DissipationView Compare
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IRGS4064DPBF20 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mg-55°C~175°C TJTube2012Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors101WSingleStandard101WN-CHANNEL1.91V20A62 ns600V1.6V400V, 10A, 22 Ω, 15V1.91V @ 15V, 10ATrench32nC40A27ns/79ns29μJ (on), 200μJ (off)20V6.5V29ns4.83mm10.67mm9.65mmNo SVHCNoRoHS CompliantLead Free----------------- -
9 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mg-55°C~175°C TJTape & Reel (TR)2005Last Time Buy1 (Unlimited)-Insulated Gate BIP Transistors370WSingleStandard370WN-CHANNEL2.35V78A-600V1.95V400V, 30A, 10 Ω, 15V2.35V @ 15V, 30ANPT102nC120A46ns/185ns350μJ (on), 825μJ (off)20V5.5V42ns----NoROHS3 Compliant-SILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030IRGS30B60KPBFR-PSSO-G21COLLECTORMOTOR CONTROL600V74 ns237 ns-
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13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mg-55°C~175°C TJTube2009Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250WSingleStandard-N-CHANNEL1.95V48A89 ns600V1.6V400V, 24A, 10 Ω, 15V1.95V @ 15V, 24ATrench50nC96A41ns/104ns115μJ (on), 600μJ (off)20V6.5V41ns9.65mm10.668mm4.826mmNo SVHCNoRoHS Compliant-SILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030IRGS4062DPBFR-PSSO-G21COLLECTORPOWER CONTROL-64 ns164 ns250W
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13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3260.39037mg-55°C~150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)--90WSingleStandard90WN-CHANNEL2.2V13A70 ns600V-400V, 5A, 100 Ω, 15V2.2V @ 15V, 5ANPT18.2nC26A25ns/215ns110μJ (on), 135μJ (off)-------NoROHS3 CompliantLead FreeSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030IRGS6B60KDPBFR-PSSO-G21COLLECTORMOTOR CONTROL600V45 ns258 ns-
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