Infineon Technologies IRGS4055PBF
- Part Number:
- IRGS4055PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2496439-IRGS4055PBF
- Description:
- IGBT 300V 110A 255W D2PAK
- Datasheet:
- IRGS4055PBF
Infineon Technologies IRGS4055PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGS4055PBF.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Reach Compliance Codecompliant
- Rise Time-Max55ns
- Input TypeStandard
- Power - Max255W
- Polarity/Channel TypeN-CHANNEL
- Voltage - Collector Emitter Breakdown (Max)300V
- Current - Collector (Ic) (Max)110A
- Power Dissipation-Max (Abs)255W
- Test Condition180V, 35A, 10 Ω
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 110A
- IGBT TypeTrench
- Gate Charge132nC
- Td (on/off) @ 25°C44ns/245ns
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max5V
- Fall Time-Max (tf)198ns
- RoHS StatusRoHS Compliant
IRGS4055PBF Description
IRGS4055PBF is a 300v PDP trench IGBT. This IGBT is specifically designed for applications in Plasma Display Panels. This IRGS4055PBF utilizes advanced trench IGBT technology to achieve low VcE(on) and low Epul .sE TM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRGS4055PBF Features
Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiency High repetitive peak current capability Lead-Free package
IRGS4055PBF Applications
Automotive Hybrid, electric & powertrain systems Industrial Aerospace & Defense Enterprise systems Enterprise projectors
IRGS4055PBF is a 300v PDP trench IGBT. This IGBT is specifically designed for applications in Plasma Display Panels. This IRGS4055PBF utilizes advanced trench IGBT technology to achieve low VcE(on) and low Epul .sE TM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRGS4055PBF Features
Advanced Trench IGBT Technology Optimized for Sustain and Energy Recoverycircuits in PDP applications Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiency High repetitive peak current capability Lead-Free package
IRGS4055PBF Applications
Automotive Hybrid, electric & powertrain systems Industrial Aerospace & Defense Enterprise systems Enterprise projectors
IRGS4055PBF More Descriptions
Trans IGBT Chip N-CH 300V 110A 3-Pin(2 Tab) D2PAK
300V Plasma Display Panel Trench IGBT in a D2-Pak package
IGBT 300V 110A 255W D2PAK
300V Plasma Display Panel Trench IGBT in a D2-Pak package
IGBT 300V 110A 255W D2PAK
The three parts on the right have similar specifications to IRGS4055PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryReach Compliance CodeRise Time-MaxInput TypePower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Test ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeTd (on/off) @ 25°CGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTurn Off Time-Nom (toff)Current - Collector Pulsed (Icm)Switching EnergyHeightLengthWidthREACH SVHCRadiation HardeningVoltage - Rated DCCurrent RatingRise TimeLead FreeMax Breakdown VoltageView Compare
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IRGS4055PBFSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES-40°C~150°C TJTube2007Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistorscompliant55nsStandard255WN-CHANNEL300V110A255W180V, 35A, 10 Ω2.1V @ 15V, 110ATrench132nC44ns/245ns30V5V198nsRoHS Compliant---------------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTube2009Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors--Standard-N-CHANNEL---400V, 24A, 10 Ω, 15V1.95V @ 15V, 24ATrench50nC41ns/104ns20V6.5V41nsRoHS Compliant13 WeeksSurface Mount3260.39037mgSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrier250WGULL WING26030IRGS4062DPBFR-PSSO-G21Single250WCOLLECTORPOWER CONTROL1.95V48A89 ns600V1.6V64 ns164 ns96A115μJ (on), 600μJ (off)9.65mm10.668mm4.826mmNo SVHCNo-----
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~150°C TJTube2012Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors--Standard-N-CHANNEL---400V, 5A, 100 Ω, 15V2.2V @ 15V, 5ANPT18.2nC25ns/215ns20V5.5V27nsRoHS Compliant16 WeeksThrough Hole3-SILICONe33Matte Tin (Sn) - with Nickel (Ni) barrier90W-26030--1Single90WCOLLECTORMOTOR CONTROL2.2V13A70 ns600V2V45 ns258 ns26A110μJ (on), 135μJ (off)9.652mm10.668mm4.826mmNo SVHCNo600V13A17nsLead Free-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)----Standard90WN-CHANNEL---400V, 5A, 100 Ω, 15V2.2V @ 15V, 5ANPT18.2nC25ns/215ns---ROHS3 Compliant13 WeeksSurface Mount3260.39037mgSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrier90WGULL WING26030IRGS6B60KDPBFR-PSSO-G21Single-COLLECTORMOTOR CONTROL2.2V13A70 ns600V-45 ns258 ns26A110μJ (on), 135μJ (off)----No---Lead Free600V
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