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IRGB6B60KDPBF

Infineon Technologies IRGB6B60KDPBF

Part Number:
IRGB6B60KDPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494911-IRGB6B60KDPBF
Description:
IGBT 600V 13A 90W TO220AB
ECAD Model:
Datasheet:
IRG(B,S,SL)6B60KDPbF

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Specifications
Infineon Technologies IRGB6B60KDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGB6B60KDPBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    90W
  • Current Rating
    13A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    90W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    MOTOR CONTROL
  • Rise Time
    17ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.2V
  • Max Collector Current
    13A
  • Reverse Recovery Time
    70 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Turn On Time
    45 ns
  • Test Condition
    400V, 5A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 5A
  • Turn Off Time-Nom (toff)
    258 ns
  • IGBT Type
    NPT
  • Gate Charge
    18.2nC
  • Current - Collector Pulsed (Icm)
    26A
  • Td (on/off) @ 25°C
    25ns/215ns
  • Switching Energy
    110μJ (on), 135μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Fall Time-Max (tf)
    27ns
  • Height
    15.24mm
  • Length
    10.54mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRGB6B60KDPBF Description
The IRGB6B60KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. It has a low VCE (on) non-punch and ultra-soft diode reverse recovery properties thanks to IGBT technology.

IRGB6B60KDPBF Features
Lead-Free
Low Diode VF.
Square RBSOA.
10μs Short Circuit Capability.
Positive VCE (on) Temperature Coefficient.
Ultrasoft Diode Reverse Recovery Characteristics.
Low VCE (on) Non-Punch Through IGBT Technology.

IRGB6B60KDPBF Applications
Lighting
Alternative Energy
Power Management
Motor Drive & Control
Consumer Electronics
IRGB6B60KDPBF More Descriptions
Trans IGBT Chip N-CH 600V 18A 90000mW 3-Pin(3 Tab) TO-220AB Tube / IGBT 600V 13A 90W TO220AB
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package, TO220COPAK-3, RoHSInfineon SCT
N-Channel 600 V 18 A Flange Mount Insulated Gated Bipolar Transistor - TO-220AB
Target Applications: Dishwasher; Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Fall Time Max:22ns; Fall Time tf:22ns; Package / Case:TO-220AB; Power Dissipation Max:90W; Power Dissipation Pd:90W; Power Dissipation Pd:90W; Pulsed Current Icm:26A; Rise Time:17ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Product Comparison
The three parts on the right have similar specifications to IRGB6B60KDPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Weight
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • IRGB6B60KDPBF
    IRGB6B60KDPBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Insulated Gate BIP Transistors
    600V
    90W
    13A
    1
    Single
    90W
    COLLECTOR
    Standard
    MOTOR CONTROL
    17ns
    N-CHANNEL
    2.2V
    13A
    70 ns
    TO-220AB
    600V
    1.8V
    45 ns
    400V, 5A, 100 Ω, 15V
    2.2V @ 15V, 5A
    258 ns
    NPT
    18.2nC
    26A
    25ns/215ns
    110μJ (on), 135μJ (off)
    20V
    5.5V
    27ns
    15.24mm
    10.54mm
    4.69mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGB4086PBF
    IRGB4086PBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -40°C~150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    160W
    -
    -
    Single
    160W
    -
    Standard
    -
    -
    -
    2.96V
    70A
    -
    -
    300V
    2.1V
    -
    196V, 25A, 10Ohm
    2.96V @ 15V, 120A
    -
    Trench
    65nC
    -
    36ns/112ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    TO-220AB
    150°C
    -40°C
    160W
    300V
    70A
    -
    -
    -
    IRGB6B60KDPBF vs IRGB4086PBF
  • IRGB4640DPBF
    IRGB4640DPBF
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    89ns
    -
    -
    -
    -
    400V, 24A, 10Ohm, 15V
    1.9V @ 15V, 24A
    -
    -
    75nC
    72A
    41ns/104ns
    115μJ (on), 600μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-220AC
    -
    -
    250W
    600V
    65A
    -
    -
    -
    IRGB6B60KDPBF vs IRGB4640DPBF
  • IRGB4615DPBF
    IRGB4615DPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -40°C~175°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    EAR99
    Insulated Gate BIP Transistors
    -
    99W
    -
    -
    Single
    -
    -
    Standard
    -
    -
    N-CHANNEL
    1.85V
    23A
    60 ns
    -
    600V
    1.55V
    -
    400V, 8A, 47 Ω, 15V
    1.85V @ 15V, 8A
    -
    -
    19nC
    24A
    30ns/95ns
    70μJ (on), 145μJ (off)
    20V
    6.5V
    -
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    -
    RoHS Compliant
    -
    -
    -
    -
    99W
    -
    -
    2.299997g
    NOT SPECIFIED
    NOT SPECIFIED
    IRGB6B60KDPBF vs IRGB4615DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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