Vishay Siliconix IRFPF40PBF
- Part Number:
- IRFPF40PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478992-IRFPF40PBF
- Description:
- MOSFET N-CH 900V 4.7A TO-247AC
- Datasheet:
- IRFPF40PBF
Vishay Siliconix IRFPF40PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPF40PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance2.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Power Dissipation150W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.5Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.7A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time36ns
- Drain to Source Voltage (Vdss)900V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)4.7A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage900V
- Input Capacitance1.6nF
- Drain to Source Resistance2.5Ohm
- Rds On Max2.5 Ω
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFPF40PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1600pF @ 25V.This device has a continuous drain current (ID) of [4.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 2.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFPF40PBF Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)
IRFPF40PBF Applications
There are a lot of Vishay Siliconix
IRFPF40PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1600pF @ 25V.This device has a continuous drain current (ID) of [4.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 2.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFPF40PBF Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)
IRFPF40PBF Applications
There are a lot of Vishay Siliconix
IRFPF40PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFPF40PBF More Descriptions
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
Mosfet N-Channel 900V Rohs Compliant: No
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
IC SDTV VIDEO AMP 4-CH 14-TSSOP
Mosfet N-Channel 900V Rohs Compliant: No
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
IC SDTV VIDEO AMP 4-CH 14-TSSOP
The three parts on the right have similar specifications to IRFPF40PBF.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Radiation HardeningVoltage - Rated DCCurrent RatingView Compare
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IRFPF40PBF8 WeeksTinThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2014Active1 (Unlimited)2.5Ohm150°C-55°CMOSFET (Metal Oxide)11150W TcSingle150W15 nsN-Channel2.5Ohm @ 2.8A, 10V4V @ 250μA1600pF @ 25V4.7A Tc120nC @ 10V36ns900V10V±20V32 ns110 ns4.7A4V20V900V1.6nF2.5Ohm2.5 Ω4 V20.7mm15.87mm5.31mmUnknownROHS3 CompliantLead Free--------------------
-
-------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-247-3-400 mOhm @ 8.4A, 10V190W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole2600pF @ 25V150nC @ 10VN-Channel-500V14A (Tc)---
-
--Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNon-RoHS Compliant-----------------No--
-
--Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A-20V400V2.6nF300mOhm300 mΩ-20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead-----------------400V16A
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