IRFPF40PBF

Vishay Siliconix IRFPF40PBF

Part Number:
IRFPF40PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478992-IRFPF40PBF
Description:
MOSFET N-CH 900V 4.7A TO-247AC
ECAD Model:
Datasheet:
IRFPF40PBF

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Specifications
Vishay Siliconix IRFPF40PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPF40PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    2.5Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.5Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    36ns
  • Drain to Source Voltage (Vdss)
    900V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    110 ns
  • Continuous Drain Current (ID)
    4.7A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    900V
  • Input Capacitance
    1.6nF
  • Drain to Source Resistance
    2.5Ohm
  • Rds On Max
    2.5 Ω
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFPF40PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1600pF @ 25V.This device has a continuous drain current (ID) of [4.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 2.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFPF40PBF Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)


IRFPF40PBF Applications
There are a lot of Vishay Siliconix
IRFPF40PBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFPF40PBF More Descriptions
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
Mosfet N-Channel 900V Rohs Compliant: No
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
IC SDTV VIDEO AMP 4-CH 14-TSSOP
Product Comparison
The three parts on the right have similar specifications to IRFPF40PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Radiation Hardening
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFPF40PBF
    IRFPF40PBF
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Active
    1 (Unlimited)
    2.5Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    150W Tc
    Single
    150W
    15 ns
    N-Channel
    2.5Ohm @ 2.8A, 10V
    4V @ 250μA
    1600pF @ 25V
    4.7A Tc
    120nC @ 10V
    36ns
    900V
    10V
    ±20V
    32 ns
    110 ns
    4.7A
    4V
    20V
    900V
    1.6nF
    2.5Ohm
    2.5 Ω
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP450
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    MOSFET (Metal Oxide)
    TO-247-3
    -
    400 mOhm @ 8.4A, 10V
    190W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    2600pF @ 25V
    150nC @ 10V
    N-Channel
    -
    500V
    14A (Tc)
    -
    -
    -
  • IRFP350LC
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    -
    -
  • IRFP350
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    400V
    16A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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