Vishay Siliconix IRFPE50
- Part Number:
- IRFPE50
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071044-IRFPE50
- Description:
- MOSFET N-CH 800V 7.8A TO-247AC
- Datasheet:
- IRFPE50
Vishay Siliconix IRFPE50 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPE50.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.2Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Current Rating7.8A
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Turn On Delay Time19 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 4.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.8A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Rise Time38ns
- Drain to Source Voltage (Vdss)800V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time120 ns
- Continuous Drain Current (ID)7.8A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage800V
- Input Capacitance3.1nF
- Drain to Source Resistance1.2Ohm
- Rds On Max1.2 Ω
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFPE50 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFPE50 Features
a continuous drain current (ID) of 7.8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 1.2Ohm
a 800V drain to source voltage (Vdss)
IRFPE50 Applications
There are a lot of Vishay Siliconix
IRFPE50 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFPE50 Features
a continuous drain current (ID) of 7.8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 1.2Ohm
a 800V drain to source voltage (Vdss)
IRFPE50 Applications
There are a lot of Vishay Siliconix
IRFPE50 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFPE50 More Descriptions
Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A) | MOSFET N-CH 800V 7.8A TO-247AC
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package.
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 5.45mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 32.4A
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package.
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 5.45mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 32.4A
The three parts on the right have similar specifications to IRFPE50.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Transistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsOperating ModePower DissipationCase ConnectionTransistor ApplicationThreshold VoltageView Compare
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IRFPE50Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)1.2Ohm150°C-55°C800VMOSFET (Metal Oxide)7.8A1190W TcSingle19 nsN-Channel1.2Ohm @ 4.7A, 10V4V @ 250μA3100pF @ 25V7.8A Tc200nC @ 10V38ns800V10V±20V39 ns120 ns7.8A20V800V3.1nF1.2Ohm1.2 Ω20.7mm15.87mm5.31mmUnknownNoNon-RoHS CompliantContains Lead---------------------------------
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----------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-247-3-400 mOhm @ 8.4A, 10V190W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole2600pF @ 25V150nC @ 10VN-Channel-500V14A (Tc)----------------
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Through HoleThrough HoleTO-247-33-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)---60VMOSFET (Metal Oxide)70A1230W TcSingle20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A20V60V---20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead----------------SILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not Qualified1ENHANCEMENT MODE230WDRAINSWITCHING-
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Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)-150°C-55°C450VMOSFET (Metal Oxide)9.5A1150W TcSingle8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A20V450V1.4nF630mOhm630 mΩ20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free----------------------------150W--4V
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