IRFPE50

Vishay Siliconix IRFPE50

Part Number:
IRFPE50
Manufacturer:
Vishay Siliconix
Ventron No:
3071044-IRFPE50
Description:
MOSFET N-CH 800V 7.8A TO-247AC
ECAD Model:
Datasheet:
IRFPE50

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Specifications
Vishay Siliconix IRFPE50 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPE50.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.2Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    800V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    7.8A
  • Number of Channels
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    19 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    200nC @ 10V
  • Rise Time
    38ns
  • Drain to Source Voltage (Vdss)
    800V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    120 ns
  • Continuous Drain Current (ID)
    7.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    800V
  • Input Capacitance
    3.1nF
  • Drain to Source Resistance
    1.2Ohm
  • Rds On Max
    1.2 Ω
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFPE50 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 120 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFPE50 Features
a continuous drain current (ID) of 7.8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 120 ns
single MOSFETs transistor is 1.2Ohm
a 800V drain to source voltage (Vdss)


IRFPE50 Applications
There are a lot of Vishay Siliconix
IRFPE50 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFPE50 More Descriptions
Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A) | MOSFET N-CH 800V 7.8A TO-247AC
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package.
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 5.45mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 32.4A
Product Comparison
The three parts on the right have similar specifications to IRFPE50.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Threshold Voltage
    View Compare
  • IRFPE50
    IRFPE50
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    1.2Ohm
    150°C
    -55°C
    800V
    MOSFET (Metal Oxide)
    7.8A
    1
    190W Tc
    Single
    19 ns
    N-Channel
    1.2Ohm @ 4.7A, 10V
    4V @ 250μA
    3100pF @ 25V
    7.8A Tc
    200nC @ 10V
    38ns
    800V
    10V
    ±20V
    39 ns
    120 ns
    7.8A
    20V
    800V
    3.1nF
    1.2Ohm
    1.2 Ω
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP450
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    MOSFET (Metal Oxide)
    TO-247-3
    -
    400 mOhm @ 8.4A, 10V
    190W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    2600pF @ 25V
    150nC @ 10V
    N-Channel
    -
    500V
    14A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    1
    230W Tc
    Single
    20 ns
    N-Channel
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    -
    10V
    ±20V
    150 ns
    83 ns
    70A
    20V
    60V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SILICON
    e0
    no
    3
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    ENHANCEMENT MODE
    230W
    DRAIN
    SWITCHING
    -
  • IRFP344PBF
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    1
    150W Tc
    Single
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    150W
    -
    -
    4V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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