Vishay Siliconix IRFPE40PBF

Name: IRFPE40PBF
Brand: Vishay Siliconix
SKU: 2848924-IRFPE40PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFPE40PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2848924-IRFPE40PBF

Description:: MOSFET N-CH 800V 5.4A TO-247AC

ECAD Model:

Datasheet:: IRFPE40PBF

Specifications

Vishay Siliconix IRFPE40PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPE40PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Resistance
2Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
5.4A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.4A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
36ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
5.4A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
22A
Avalanche Energy Rating (Eas)
490 mJ
Recovery Time
830 ns
Nominal Vgs
4 V
Height
20.7mm
Length
15.87mm
Width
5.31mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFPE40PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 490 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 25V.This device conducts a continuous drain current (ID) of 5.4A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 22A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFPE40PBF Features
the avalanche energy rating (Eas) is 490 mJ
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 22A.

IRFPE40PBF Applications
There are a lot of Vishay Siliconix
IRFPE40PBF applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRFPE40PBF More Descriptions

Single N-Channel 800 V 2 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:5.4A; On Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRFPE40PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Published

Max Operating Temperature

Min Operating Temperature

Threshold Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

REACH SVHC

View Compare
IRFPE40PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-247-3

3

38.000013g

SILICON

-55°C~150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

2Ohm

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

800V

MOSFET (Metal Oxide)

260

5.4A

40

3

1

1

150W Tc

Single

ENHANCEMENT MODE

150W

DRAIN

16 ns

N-Channel

SWITCHING

2 Ω @ 3.2A, 10V

4V @ 250μA

1900pF @ 25V

5.4A Tc

130nC @ 10V

36ns

10V

±20V

32 ns

100 ns

5.4A

TO-247AC

20V

800V

22A

490 mJ

830 ns

4 V

20.7mm

15.87mm

5.31mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP150

Vishay Siliconix

-

-

Through Hole

TO-247-3

-

-

SILICON

-55°C~175°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

-

TIN LEAD

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

-

1

-

230W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

-

10V

±20V

-

-

-

-

-

-

160A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SINGLE

unknown

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

100V

40A

0.055Ohm

100V

-

-

-

-

-

-

-

-

-

IRFPE40PBF vs IRFP150
IRFP350LC

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

38.000013g

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1

1

190W Tc

Single

-

190W

-

14 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

54ns

10V

±30V

35 ns

33 ns

16A

-

30V

400V

-

-

-

4 V

20.7mm

15.87mm

5.31mm

No

Non-RoHS Compliant

-

-

-

-

-

-

-

400V

-

-

-

TO-247-3

2016

150°C

-55°C

4V

2.2nF

300mOhm

300 mΩ

Unknown

IRFPE40PBF vs IRFP350LC
IRFP344PBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

38.000013g

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

450V

MOSFET (Metal Oxide)

-

9.5A

-

-

-

1

150W Tc

Single

-

150W

-

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

58 ns

9.5A

-

20V

450V

-

-

-

-

20.7mm

15.87mm

5.31mm

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

450V

-

-

-

TO-247-3

1997

150°C

-55°C

4V

1.4nF

630mOhm

630 mΩ

Unknown

IRFPE40PBF vs IRFP344PBF

Certification

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Part Number	Manufacturers	Description	Stock	Price
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Compliant	36	1 $2.9266
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Siliconix	MOSFET N-CH 800V 5.4A TO-247AC RoHS: Compliant	186	1 $3.97 25 $3.1928 100 $2.909 500 $2.35554 1000 $1.9866
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Compliant	963	9 $1.3753 100 $1.331 250 $1.2894 500 $1.2503
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Compliant	36	4 $2.9266
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Not Compliant	0	500 $1.59 1000 $1.59 2000 $1.49 3000 $1.49 5000 $1.39
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Compliant	0	1 $2.49 10 $1.69 25 $1.39 50 $1.29 100 $1.19 500 $1.19 1000 $1.19
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 800V, RDS(ON) 2 Ohms RoHS: Compliant	0	500 $4.177
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	MOSFET N-Chan 800V 5.4 Amp RoHS: Compliant	1211	1 $3.44 10 $2.85 100 $2.35 250 $2.27 500 $2.04 1000 $1.72 2500 $1.64 5000 $1.58
IRFPE40 DISTI #IRFPE40	Vishay Intertechnologies	MOSFET 800V Vds 20V Vgs TO-247AC RoHS: Not Compliant	0
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 800V 5.4A TO247AC, BG	634	5 $2.04 10 $1.85
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 800V 5.4A TO247AC, EA	87	1 $2.79 5 $2.04 10 $1.85
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 800V, 3.4A, 15	56	1 $1.99 3 $1.89 10 $1.73 50 $1.52 250 $1.34
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	MOSFET N-Chan 800V 5.4 Amp RoHS: Compliant	0
IRFPE40PBF DISTI #IRFPE40PBF	Vishay Intertechnologies	Trans MOSFET N-CH 800V 5.4A 3-Pin(3 Tab) TO-247AC RoHS: Compliant	970	1 $3.96 10 $2.57 50 $2.11 100 $1.94 500 $1.48

Vishay Siliconix IRFPE40PBF

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