Vishay Siliconix IRFPC50PBF
- Part Number:
- IRFPC50PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483549-IRFPC50PBF
- Description:
- MOSFET N-CH 600V 11A TO-247AC
- Datasheet:
- IRFPC50PBF
Vishay Siliconix IRFPC50PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC50PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance600mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating11A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Power Dissipation180W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Rise Time37ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time88 ns
- Continuous Drain Current (ID)11A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Input Capacitance2.7nF
- Recovery Time830 ns
- Drain to Source Resistance600mOhm
- Rds On Max600 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFPC50PBF Overview
A device's maximal input capacitance is 2700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 88 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 600mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFPC50PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC50PBF Applications
There are a lot of Vishay Siliconix
IRFPC50PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 88 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 600mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFPC50PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC50PBF Applications
There are a lot of Vishay Siliconix
IRFPC50PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFPC50PBF More Descriptions
Single N-Channel 600 V 0.6 Ohms Flange Mount Power Mosfet - TO-247AC
Single-Gate MOSFET Transistors N-Chan 600V 11 Amp
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC
MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.6Ohm, ID 11A, TO-247AC, PD 180W, VGS /-20V | Vishay PCS IRFPC50PBF
N-Ch 600V 11A 180W 0,6R TO247AC
IRFPC50PBF power transistor module
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; On State Resistance Max:600mohm; Package / Case:TO-247AC; Power Dissipation Pd:180W; Power Dissipation Pd:180W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Single-Gate MOSFET Transistors N-Chan 600V 11 Amp
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC
MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.6Ohm, ID 11A, TO-247AC, PD 180W, VGS /-20V | Vishay PCS IRFPC50PBF
N-Ch 600V 11A 180W 0,6R TO247AC
IRFPC50PBF power transistor module
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; On State Resistance Max:600mohm; Package / Case:TO-247AC; Power Dissipation Pd:180W; Power Dissipation Pd:180W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFPC50PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRoHS StatusLead FreeNominal VgsRadiation HardeningView Compare
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IRFPC50PBF12 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Active1 (Unlimited)600mOhm150°C-55°C600VMOSFET (Metal Oxide)11A11180W TcSingle180W18 nsN-Channel600mOhm @ 6A, 10V4V @ 250μA2700pF @ 25V11A Tc140nC @ 10V37ns600V10V±20V36 ns88 ns11A4V20V600V2.7nF830 ns600mOhm600 mΩ20.7mm15.87mm5.31mmUnknownROHS3 CompliantLead Free---
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-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF-300mOhm300 mΩ20.7mm15.87mm5.31mmUnknownNon-RoHS Compliant-4 VNo
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-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)-150°C-55°C450VMOSFET (Metal Oxide)9.5A-1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A4V20V450V1.4nF-630mOhm630 mΩ20.7mm15.87mm5.31mmUnknownROHS3 CompliantLead Free--
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-Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)-150°C-55°C500VMOSFET (Metal Oxide)32A-1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V5.28nF-160mOhm160 mΩ20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead-No
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