IRFPC50PBF

Vishay Siliconix IRFPC50PBF

Part Number:
IRFPC50PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2483549-IRFPC50PBF
Description:
MOSFET N-CH 600V 11A TO-247AC
ECAD Model:
Datasheet:
IRFPC50PBF

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Specifications
Vishay Siliconix IRFPC50PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC50PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    600mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    11A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    180W Tc
  • Element Configuration
    Single
  • Power Dissipation
    180W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    600mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Rise Time
    37ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    36 ns
  • Turn-Off Delay Time
    88 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    2.7nF
  • Recovery Time
    830 ns
  • Drain to Source Resistance
    600mOhm
  • Rds On Max
    600 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFPC50PBF Overview
A device's maximal input capacitance is 2700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 88 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 600mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFPC50PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 88 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFPC50PBF Applications
There are a lot of Vishay Siliconix
IRFPC50PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFPC50PBF More Descriptions
Single N-Channel 600 V 0.6 Ohms Flange Mount Power Mosfet - TO-247AC
Single-Gate MOSFET Transistors N-Chan 600V 11 Amp
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC
MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.6Ohm, ID 11A, TO-247AC, PD 180W, VGS /-20V | Vishay PCS IRFPC50PBF
N-Ch 600V 11A 180W 0,6R TO247AC
IRFPC50PBF power transistor module
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; On State Resistance Max:600mohm; Package / Case:TO-247AC; Power Dissipation Pd:180W; Power Dissipation Pd:180W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFPC50PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Nominal Vgs
    Radiation Hardening
    View Compare
  • IRFPC50PBF
    IRFPC50PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    600mOhm
    150°C
    -55°C
    600V
    MOSFET (Metal Oxide)
    11A
    1
    1
    180W Tc
    Single
    180W
    18 ns
    N-Channel
    600mOhm @ 6A, 10V
    4V @ 250μA
    2700pF @ 25V
    11A Tc
    140nC @ 10V
    37ns
    600V
    10V
    ±20V
    36 ns
    88 ns
    11A
    4V
    20V
    600V
    2.7nF
    830 ns
    600mOhm
    600 mΩ
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    -
    300mOhm
    300 mΩ
    20.7mm
    15.87mm
    5.31mm
    Unknown
    Non-RoHS Compliant
    -
    4 V
    No
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    1
    150W Tc
    Single
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    1.4nF
    -
    630mOhm
    630 mΩ
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    -
    1
    460W Tc
    Single
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    30V
    500V
    5.28nF
    -
    160mOhm
    160 mΩ
    20.7mm
    15.87mm
    5.31mm
    -
    Non-RoHS Compliant
    Contains Lead
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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