IRFPC50APBF

Vishay Siliconix IRFPC50APBF

Part Number:
IRFPC50APBF
Manufacturer:
Vishay Siliconix
Ventron No:
2480000-IRFPC50APBF
Description:
MOSFET N-CH 600V 11A TO-247AC
ECAD Model:
Datasheet:
IRFPC50APBF

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Specifications
Vishay Siliconix IRFPC50APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC50APBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    580mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    11A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    180W Tc
  • Element Configuration
    Single
  • Power Dissipation
    180W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    580mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Rise Time
    40ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    2.1nF
  • Drain to Source Resistance
    580mOhm
  • Rds On Max
    580 mΩ
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFPC50APBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 580mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFPC50APBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 580mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFPC50APBF Applications
There are a lot of Vishay Siliconix
IRFPC50APBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFPC50APBF More Descriptions
Single N-Channel 600 V 0.58 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 600V 11A TO-247AC
Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):580mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 180W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 11A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0.65°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Product Comparison
The three parts on the right have similar specifications to IRFPC50APBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    View Compare
  • IRFPC50APBF
    IRFPC50APBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    580mOhm
    150°C
    -55°C
    600V
    MOSFET (Metal Oxide)
    11A
    1
    1
    180W Tc
    Single
    180W
    15 ns
    N-Channel
    580mOhm @ 6A, 10V
    4V @ 250μA
    2100pF @ 25V
    11A Tc
    70nC @ 10V
    40ns
    600V
    10V
    ±30V
    29 ns
    33 ns
    11A
    4V
    30V
    600V
    2.1nF
    580mOhm
    580 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    1
    1
    230W Tc
    Single
    230W
    20 ns
    N-Channel
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    -
    10V
    ±20V
    150 ns
    83 ns
    70A
    -
    20V
    60V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SILICON
    e0
    no
    3
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    1
    150W Tc
    Single
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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