Vishay Siliconix IRFPC50APBF
- Part Number:
- IRFPC50APBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2480000-IRFPC50APBF
- Description:
- MOSFET N-CH 600V 11A TO-247AC
- Datasheet:
- IRFPC50APBF
Vishay Siliconix IRFPC50APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC50APBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance580mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating11A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Power Dissipation180W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs580mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Rise Time40ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)11A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Input Capacitance2.1nF
- Drain to Source Resistance580mOhm
- Rds On Max580 mΩ
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFPC50APBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 580mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFPC50APBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 580mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC50APBF Applications
There are a lot of Vishay Siliconix
IRFPC50APBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 580mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFPC50APBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 580mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFPC50APBF Applications
There are a lot of Vishay Siliconix
IRFPC50APBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFPC50APBF More Descriptions
Single N-Channel 600 V 0.58 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 600V 11A TO-247AC
Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):580mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 180W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 11A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0.65°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 600V 11A TO-247AC
Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):580mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N, 600V, 11A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 180W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 11A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0.65°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
The three parts on the right have similar specifications to IRFPC50APBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating ModeCase ConnectionTransistor ApplicationView Compare
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IRFPC50APBF8 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2004Active1 (Unlimited)580mOhm150°C-55°C600VMOSFET (Metal Oxide)11A11180W TcSingle180W15 nsN-Channel580mOhm @ 6A, 10V4V @ 250μA2100pF @ 25V11A Tc70nC @ 10V40ns600V10V±30V29 ns33 ns11A4V30V600V2.1nF580mOhm580 mΩ4 V20.7mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free--------------
-
-Through HoleThrough HoleTO-247-33-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)---60VMOSFET (Metal Oxide)70A11230W TcSingle230W20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A-20V60V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not QualifiedENHANCEMENT MODEDRAINSWITCHING
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNoNon-RoHS Compliant--------------
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-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)-150°C-55°C450VMOSFET (Metal Oxide)9.5A-1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A4V20V450V1.4nF630mOhm630 mΩ-20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free-------------
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